Interaction between the excitons and electrons in ZnSe1-xSx epilayer under high excitation

Z. P. Guan; Zhuhong Zheng; J. H. Zhang; Youming Lu; Guang Han Fan; Xiwu Fan

doi:10.1117/12.47276

1 November 1991 Interaction between the excitons and electrons in ZnSe_1-xS_x epilayer under high excitation

Z. P. Guan, Zhuhong Zheng, J. H. Zhang, Youming Lu, Guang Han Fan, Xiwu Fan

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47276
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

Excitonic properties of ZnSe_1-xS_x epilayer fabricated on GaAs substrate by a Ap-MOCVD have been investigated. Luminescence, excitation, and time-resolved spectroscopy have been employed to study the interaction between excitons and electrons at 77 and 300 K. Under pulsed N₂ laser excitation it is found that the peak shift of the near band edge emission is large, especially at room temperature. This is because the bottoms of the conduction bands are filled at higher temperature and the carriers from the exciton-exciton scattering must occupy higher energy levels. Therefore a shift of the peak toward lower energy is expected.

Citation Download Citation

Z. P. Guan, Zhuhong Zheng, J. H. Zhang, Youming Lu, Guang Han Fan, and Xiwu Fan "Interaction between the excitons and electrons in ZnSe_1-xS_x epilayer under high excitation", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47276

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