New deposition system for the preparation of doped a-Si:H

Zhaoping Wu; Ru Guang Chen; Yongling Wang

doi:10.1117/12.47319

1 November 1991 New deposition system for the preparation of doped a-Si:H

Zhaoping Wu, Ru Guang Chen, Yongling Wang

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47319
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

A novel technique, rf sputtering and rf glow discharge (GD) coexistent system, has been developed for the preparation of doped a-Si:H. Dopant, which is sputtered from the target in either powder or solid, is introduced into GD chamber and then deposited onto the substrate in the presence of glow discharge of silane. The relationship between the deposition parameters and film properties is investigated thoroughly. The substrate negative bias favors deposit of high quality a-Si:H. The conductivity measurement reveals that the Fermi level can be moved from 0.75 eV of undoped a-Si:H to 0.19 eV corresponding to high phosphorous doped a-Si:H by increasing sputtering power.

Citation Download Citation

Zhaoping Wu, Ru Guang Chen, and Yongling Wang "New deposition system for the preparation of doped a-Si:H", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47319

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