Carrier relaxation process of V-grooved AlGaAs/GaAs quantum wire modified by selective implantation-induced intermixing

Xingquan Liu; Wei Lu; Xiaoshuang Chen; Shuechu Shen; Hui Z. Wang; Fuli Zhao; Xiguang Zheng; Ying Fu; Magnus Willander

doi:10.1117/12.344554

7 April 1999 Carrier relaxation process of V-grooved AlGaAs/GaAs quantum wire modified by selective implantation-induced intermixing

Xingquan Liu, Wei Lu, Xiaoshuang Chen, Shuechu Shen, Hui Z. Wang, Fuli Zhao, Xiguang Zheng, Ying Fu, Magnus Willander

Author Affiliations +

Proceedings Volume 3629, Photodetectors: Materials and Devices IV; (1999) https://doi.org/10.1117/12.344554
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

In this letter, self-aligned dual implantation technique was successfully used to speed up the carrier transportation from sidewall quantum well (SQWL) to quantum wire (QWR) region in V-groove AlGaAs/GaAs QWR structure. Photoluminescence (PL) and time resolved photoluminescence (TRPL) show that the lateral confinement was enhanced after intermixing by intermixing the necking region. Lifetime was obviously enlonged after selective intermixing, which comes from the enhanced lateral carrier confinement. Strong hot exciton relaxation process in QWRs region is observed after selective intermixing.

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Xingquan Liu, Wei Lu, Xiaoshuang Chen, Shuechu Shen, Hui Z. Wang, Fuli Zhao, Xiguang Zheng, Ying Fu, and Magnus Willander "Carrier relaxation process of V-grooved AlGaAs/GaAs quantum wire modified by selective implantation-induced intermixing", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344554

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