Paper
26 June 1992 Performance of ridge waveguide lasers fabricated from highly strained InGaAs-GaAs-AlGaAs quantum wells
Richard F. Murison, Shuyen R. Lee, Michael J. Brown, Nigel Holehouse, Alan H. Moore, Timothy M. Cockerill, James J. Coleman
Author Affiliations +
Abstract
We describe 2.5Mm wide Ridge Waveguide Lasers emitting in the wavelength range 1045nm-1065nm. These are fabricated from strained layer single quantum well epitaxial heterostructures with 30%-31% InAs in the quantum well. The devices exhibit stable single spatial mode, single spectral line operation over a wide range of output power and temperature. Preliminary data suggests that reliable high power CW operation may be obtained.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard F. Murison, Shuyen R. Lee, Michael J. Brown, Nigel Holehouse, Alan H. Moore, Timothy M. Cockerill, and James J. Coleman "Performance of ridge waveguide lasers fabricated from highly strained InGaAs-GaAs-AlGaAs quantum wells", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59147
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Cited by 1 scholarly publication.
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KEYWORDS
Quantum wells

Waveguide lasers

Semiconductor lasers

Temperature metrology

Heterojunctions

Coating

Continuous wave operation

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