Chemically ampilified ArF excimer laser resists using the absorption band shift method

Makoto Nakase; Takuya Naito; Koji Asakawa; Akinori Hongu; Naomi Shida; Tohru Ushirogouchi

doi:10.1117/12.210355

9 June 1995 Chemically ampilified ArF excimer laser resists using the absorption band shift method

Makoto Nakase, Takuya Naito, Koji Asakawa, Akinori Hongu, Naomi Shida, Tohru Ushirogouchi

Proceedings Volume 2438, Advances in Resist Technology and Processing XII; (1995) https://doi.org/10.1117/12.210355
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

The VUV-absorption spectrum of aromatic compounds can be red-shifted toward longer wavelengths to make the window of absorption align with 193 nm by extending the conjugation length of the double bonds. Based on this observation, the new concept of absorption band shifting is proposed as a way to increase the transparency of resist components for 193 nm ArF excimer laser exposure. A chemically amplified single-layer ArF excimer laser resist consisting of naphthalene-containing photoacid generator, a dissolution inhibitor, and base polymer has been newly developed. Using this resist, a 0.17 micrometers line/space pattern with a vertical resist profile was resolved by a prototype 0.55 NA projection lens for ArF excimer laser exposure, and a resolution limit of 0.16 micrometers was achieved.

Citation Download Citation

Makoto Nakase, Takuya Naito, Koji Asakawa, Akinori Hongu, Naomi Shida, and Tohru Ushirogouchi "Chemically ampilified ArF excimer laser resists using the absorption band shift method", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210355

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