Ms. Agnieszka Martychowiec Profile

Agnieszka Martychowiec

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Publications (4)

Proceedings Article | 14 October 2020 Paper

Ti and TiAl-based ohmic contacts to 4H-SiC

Agnieszka Martychowiec, Norbert Kwietniewski, Kinga Kondracka, Aleksander Werbowy, Mariusz Sochacki

Proceedings Volume 11581, 115810W (2020) https://doi.org/10.1117/12.2580518

KEYWORDS: Silicon carbide, Resistance, Annealing, Argon, Titanium, Metals, Interfaces, Aluminum

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Proceedings Article | 1 October 2018 Paper

Technology and characterization of HgCdTe photodiode with a strengthened passivation

A. Pedryc, A. Martychowiec, A. Kociubiński

Proceedings Volume 10808, 108080V (2018) https://doi.org/10.1117/12.2501591

KEYWORDS: Photodiodes, Mercury cadmium telluride, Annealing, Diodes, Photodetectors, Heterojunctions, Doping, Photoresist materials, Infrared radiation, Infrared detectors

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Proceedings Article | 7 August 2017 Paper

Modeling and simulation of 4H-SiC field effect transistor

A. Pedryc, A. Martychowiec, A. Kociubiński

Proceedings Volume 10445, 1044558 (2017) https://doi.org/10.1117/12.2280949

KEYWORDS: Silicon carbide, Field effect transistors, Modeling and simulation, Oxides, Silicon, Diodes, Electrons, Modulation, Doping

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Proceedings Article | 7 August 2017 Paper

Modeling and fabrication of 4H-SiC Schottky junction

A. Martychowiec, A. Pedryc, A. Kociubiński

Proceedings Volume 10445, 1044557 (2017) https://doi.org/10.1117/12.2280948

KEYWORDS: Silicon carbide, Diodes, Silicon, Metals, Titanium, Nickel, Platinum, Electronic components, Doping, Chemical species

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