Mr. Ahmed S. Mayet Profile

Ahmed S. Mayet

SPIE Involvement:

Author

Publications (13)

SPIE Journal Paper | 24 July 2023 Open Access

Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures

Wayesh Qarony, Ahmed Mayet, Ekaterina Ponizovskaya-Devine, Soroush Ghandiparsi, Cesar Bartolo-Perez, Ahasan Ahamed, Amita Rawat, Hasina Mamtaz, Toshishige Yamada, Shih-Yuan Wang, M. Saif Islam

APN, Vol. 2, Issue 05, 056001, (July 2023) https://doi.org/10.1117/12.10.1117/1.APN.2.5.056001

KEYWORDS: Silicon, Light absorption, Photodetectors, Ultrafast phenomena, Gallium arsenide, Absorption, Quantum efficiency, Group III-V semiconductors, Fabrication, Film thickness

Read Abstract +

DOWNLOAD PAPER

SPIE Journal Paper | 20 March 2023

Single microhole per pixel for thin Ge-on-Si complementary metal-oxide semiconductor image sensor with enhanced sensitivity up to 1700 nm

Ekaterina Ponizovskaya-Devine, Ahmed S. Mayet, Amita Rawat, Ahasan Ahamed, Shih-Yuan Wang, Aly F. Elrefaie, Toshishige Yamada, M. Saif Islam

JNP, Vol. 17, Issue 01, 016012, (March 2023) https://doi.org/10.1117/12.10.1117/1.JNP.17.016012

KEYWORDS: Germanium, Crosstalk, Tunable filters, Simulations, Optical filters, Image sensors, Silicon, Light absorption, Quantum efficiency, Near infrared

Read Abstract +

Proceedings Article | 5 March 2022 Presentation + Paper

Optimizing the light penetration depth in APDs and SPADs for high gain-bandwidth and ultra-wide spectral response

Ahasan Ahamed, Cesar Bartolo-Perez, Ahmed Sulaiman Mayet, Soroush Ghandiparsi, Gerard Ariño-Estrada, Xiangnan Zhou, Julien Bec, Shih-Yuan Wang, Laura Marcu, M. Saif Islam

Proceedings Volume 12009, 1200905 (2022) https://doi.org/10.1117/12.2610526

KEYWORDS: Avalanche photodetectors, Nanostructures, Absorption, Silicon, Photonic nanostructures, Sensors, Nanostructuring, Fluorescence lifetime imaging, Modulation, Avalanche photodiodes

Read Abstract +

Proceedings Article | 2 March 2022 Presentation + Paper

Reconstruction-based spectroscopy using CMOS image sensors with random photon-trapping nanostructure per sensor

Ahasan Ahamed, Cesar Bartolo-Perez, Ahmed Mayet, Soroush Ghandiparsi, Lisa McPhillips, Shih-Yuan Wang, M. Saif Islam

Proceedings Volume 11971, 1197106 (2022) https://doi.org/10.1117/12.2610527

KEYWORDS: Spectrometers, Photodiodes, Nanostructures, Sensors, Spectroscopy, Silicon, Quantum efficiency, Biomedical optics, Photonic nanostructures, Fluorescence lifetime imaging

Read Abstract +

Proceedings Article | 3 August 2021 Paper

Controlling light penetration depth to amplify the gain in ultra-fast silicon APDs and SPADs using photon-trapping nanostructures

Ahasan Ahamed, Cesar Bartolo-Perez, Ahmed Sulaiman Mayet, Soroush GhandiParsi, Xiangnan Zhou, Julien Bec, Nibir K. Dhar, Ekaterina P. Devine, Shih-Yuan Wang, Gerard Ariño-Estrada, Laura Marcu, M. Saif Islam

Proceedings Volume 11800, 118000F (2021) https://doi.org/10.1117/12.2597835

KEYWORDS: Absorption, Silicon, Avalanche photodetectors, Photonic nanostructures, Nanostructures, Avalanche photodiodes, Etching, Photonic devices, Photodiodes, Sensors

Read Abstract +

Proceedings Article | 5 March 2021 Presentation + Paper

Controlling the photon absorption characteristics in avalanche photodetectors for high resolution biomedical imaging

Cesar Bartolo-Perez, Soroush Ghandiparsi, Ahmed Mayet, Ahasan Ahamed, Wayesh Qarony, Hilal Cansizoglu, Yang Gao, Shih-Yuan Wang, Simon Cherry, M. Saif Islam, Gerard Ariño-Estrada

Proceedings Volume 11658, 116580B (2021) https://doi.org/10.1117/12.2577805

KEYWORDS: Absorption, Avalanche photodetectors, Image resolution, Photodetectors, Finite-difference time-domain method, Ultrafast phenomena, TCAD, Structural design, Spatial resolution, Single photon

Read Abstract +

Proceedings Article | 7 May 2019 Paper

Ultra-thin super absorbing photon trapping materials for high-performance infrared detection

Hossein Rabiee-Golgir, Soroush Ghandiparsi, Ekaterina Ponizovskaya Devine, Ahmed Mayet, Cesar Bartolo-Perez, Priyalal Wijewarnasuriya, Nibir Dhar, M. Saif Islam

Proceedings Volume 11002, 110020T (2019) https://doi.org/10.1117/12.2518690

KEYWORDS: Infrared detection

Read Abstract +

The performance of mid- and long-wavelength infrared (IR) detectors is still restricted with the dark current characteristics and associated noise behavior. In this work, we propose reducing the dark current and related noise of the IR detectors to elevate high operating temperature and improve the detector quantum efficiency (QE), by using a thin absorption layer of IR absorbing materials like lead selenide (PbSe) and mercury cadmium telluride (HgCdTe). A photon bending and trapping mechanism based on integrated micro/nanoscale holes was employed to ensure high quantum efficiency despite using a thin absorbing layer. Using finite-difference time-domain (FDTD) method, the effect of embedded hole arrays on the optical absorption enhancement of ultra-thin PbSe and HgCdTe has been investigated. The calculated optical absorptions in ultra-thin IR structures without holes were compared with that of similar structures embedded with hole arrays. The optical absorption in 2 μm thick PbSe film without holes is less than 5% for 3-5 μm mid-IR wavelengths. Although applying conventional anti-reflecting (AR) coatings leads to a slightly higher absorption, it can cause higher dark current due to increased surface traps. Integration of hole arrays in 2 μm thick PbSe film has shown a significant optical absorption enhancement, up to 20% at 4.5 μm wavelength. This is equivalent to more than 2- and 4-folds' enhancement compared to a 2 μm thick flat-surface structure with AR and without AR, respectively. In addition, embedding the hole arrays in 1.2 μm thick HgCdTe IR films enhances the optical absorption up to 75% at 4.5 μm, which is more than 4 times higher than that in HgCdTe structure without holes. Additionally, the optical absorption in 1.2 μm thick HgCdTe film with periodic array of photon-trapping micro-holes enhances to 27% at 10 μm, long-IR wavelength. This is more that 3 times higher than that in HgCdTe films without holes. Our work revealed that the embedding hole arrays not only enhances the optical absorption in IR ultra-thin structures but also can reduce that material filling ratio to ~50%, which leads to a lower dark current, ensuring higher temperature operation of the IR detectors.

Proceedings Article | 25 August 2017 Paper

Highly efficient silicon solar cells designed with photon trapping micro/nano structures

Cesar Bartolo-Perez, Yang Gao, Hilal Cansizoglu, Soroush Ghandiparsi, Ahmet Kaya, Ahmed Mayet, Ekaterina Ponizovskaya Devine, Toshishige Yamada, Aly Elrefaie, Shih-Yuan Wang, M. Saif Islam

Proceedings Volume 10349, 103491D (2017) https://doi.org/10.1117/12.2276633

KEYWORDS: Solar cells, Photonic microstructures, Silicon, Photovoltaics, Absorption, Fabrication, Wet etching, Dry etching, Etching, Silicon solar cells

Read Abstract +

Proceedings Article | 25 August 2017 Presentation + Paper

Improved bandwidth and quantum efficiency in silicon photodiodes using photon-manipulating micro/nanostructures operating in the range of 700-1060 nm

Hilal Cansizoglu, Yang Gao, Soroush Ghandiparsi, Ahmet Kaya, Cesar Bartolo Perez, Ahmed Mayet, Ekaterina Ponizovskaya Devine, Mehmet Cansizoglu, Toshishige Yamada, Aly Elrefaie, Shih-Yuan Wang, M. Saif Islam

Proceedings Volume 10349, 103490U (2017) https://doi.org/10.1117/12.2276611

KEYWORDS: Silicon, Quantum efficiency, Photodetectors, Nanostructures, Photonic microstructures, Silicon photonics, Absorption, Photovoltaics

Read Abstract +

Proceedings Article | 27 September 2016 Presentation + Paper

Inhibiting device degradation induced by surface damages during top-down fabrication of semiconductor devices with micro/nano-scale pillars and holes

Ahmed Mayet, Hilal Cansizoglu, Yang Gao, Ahmet Kaya, Soroush Ghandiparsi, Toshishige Yamada, Shih-Yuan Wang, M. Saif Islam

Proceedings Volume 9924, 99240C (2016) https://doi.org/10.1117/12.2241736

KEYWORDS: Oxidation, Semiconductors, Oxides, Diodes, Silicon, Etching, Ions, Deep reactive ion etching, Reactive ion etching, PIN photodiodes

Read Abstract +

Proceedings Article | 19 September 2016 Presentation + Paper

Ga2O3 as Both Gate Dielectric and Surface Passivation via Sol-Gel Method at Room Ambient

Ahmet Kaya, Jianyi Gao, Hilal Cansızoglu, Ahmed Mayet, Hasina Mamtaz, Soroush GhandiParsi, Srabanti Chowdhury, M. Saif Islam

Proceedings Volume 9957, 995709 (2016) https://doi.org/10.1117/12.2239177

KEYWORDS: Sol-gels, Thin films, Capacitance, Interfaces, Silicon, Dielectrics, Resistance, Gallium, Diodes, Semiconductors

Read Abstract +

Proceedings Article | 16 September 2016 Paper

Efficient Si photovoltaic devices with integrated micro/nano holes

Hilal Cansizoglu, Yang Gao, Ahmet Kaya, Soroush Ghandiparsi, Kazim Polat, Yichuan Wang, Runzhou Zhang, Hind Reggad, Ahmed Mayet, Ekaterina Ponizovskaya Devine, M. Saif Islam

Proceedings Volume 9924, 99240V (2016) https://doi.org/10.1117/12.2241794

KEYWORDS: Silicon, Photovoltaics, Crystals, Solar energy, Ions, Oxides, Oxidation, Solar cells, Absorption, Scanning electron microscopy

Read Abstract +