In the Hyper-NA immersion age, it is essential to optimize all optical parameters, and so exposure tools must have
functions to precisely control the parameters.
There have been various reports indicating that polarization aberrations of projection optics affect imaging performance,
but there have been few reports on reducing their influence in tools. We have developed a new method to optimize
imaging performance with polarization taken into account.
This paper describes a theoretical analysis of polarization with Pauli decomposition. A strict vectorial calculation of
optical images matches our expression. Then, our solver software can determine the optimum conditions of all
aberration parameters of exposure tools for specific IC patterns.
ArF water immersion systems with a numerical aperture (NA) of over 1.3 have already introduced for the node up to 45-
nm half-pitch production. For the next generation of lithography, we focus on ArF immersion lithography using high-index
materials. At present, LuAG (n=2.14) is the most promising candidate as a high-index lens material. Second-generation
fluids (n=1.64) have the sufficient performance as a high-index immersion fluid. The combination of LuAG
and a second-generation fluid can enhance the NA up to 1.55 and the exposure system would be available for the 34-nm
half-pitch node when k1 is 0.27.
Although high-index immersion lithography is attractive since it is effective in raising resolution, there are some issues
not encountered in water immersion system. The issues of LuAG are its availability and the intrinsic birefringence.
Fluid degradation induced by dissolved oxygen or laser irradiation, lens contamination, and residual fluid on a wafer are
the specific issues of the immersion system.
In this article, we introduce the current status for the above issues and discuss the feasibility of ArF immersion system
using high-index materials.
Water-based ArF Immersion Lithography has overcome obstacles and enabled the 45nm node of mass
products. Canon has developed immersion exposure system the FPA7000 AS7 for 45nm node. The new
platform, the FPA-7000, is designed to cover multiple generations. The lens performance about wavefront
aberration of the FPA-7000AS7 is predicted to be less than 4m&lgr;. The illumination performance meets the
target required for the 45nm node. A solution tool for optimization is introduced to be connected with the
FPA-7000. Moreover, latest studies of immersion, such as nozzle pressure, temperature control and defect
inspection result are reported, and also discusses the possibility of high-refractive-index immersion.
With the recent scaling down of k1 factor, the importance of illumination systems for lithographic exposure tools has
been growing rapidly. This paper addresses OPC matching technology and polarized illumination that draw special
attention for illuminators for 45nm node lithography applications. In the first half of the paper, OPC matching
technology is reported. It is considered that less tolerance will be given to matching errors in the 45nm node and the
need for matching of individual errors inherent in exposure tools may arise. In this paper, the MDI method, a method
of OPC matching through direct evaluation of the effective light source, is proposed presenting its benefits. This
method enables on-site accurate matching. The latter half of the paper reports on polarized illumination which is
regarded as a standard technology in hyper-NA lithography regions. We have scrutinized the polarized illumination
performance required to obtain excellent printing quality, and clarified polarization performance indicators that need to
be assessed and controlled. As a result, it has been found that such indicators to be assessed at the mask level need to
include the phase difference between the two orthogonal polarization components as well as the degree of polarization.
ArF water immersion exposure systems with a numerical aperture (NA) of over 1.3 are currently being developed and
are expected to be used for the node up to 45-nm half-pitch. Although there are multiple candidates for the next
generation node, we here focus on ArF immersion lithography using high-index materials. The refractive index of highindex
fluids is typically about 1.64 and is larger than that of fused silica (~1.56). In this situation, the NA is limited by
the refractive index of silica and is at most 1.45. An exposure system with 1.45 NA is not suitable for 32-nm hp node,
but may be used for 37-nm hp node. In spite of this limitation, the system has the advantage of slight alterations from
the current system using water as immersion fluid. On the other hand, high-index lens material is effective to increase
the NA of projection optics further. At present, LuAG, whose refractive index is 2.14, is most promising as high-index
lens material. The combination of high-index fluid and high-index lens material can enhance the NA up to about 1.55
and the exposure system would be available for the 32-nm half-pitch node.
Although high-index immersion lithography is attractive since it is effective in raising resolution, such new materials
should be examined if these materials can be used for high precision projection optics. Here, we have investigated
optical characteristics of high-index materials in order to realize high-index immersion systems.
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