Degradation and resulting photo luminescence (PL) are sometimes induced by irradiation with UV lasers. The mechanisms of the degradation are dependent on the grades of silica glass and their production conditions. In this study, relationship between degradation phenomena and photo luminescence during the laser irradiation of pulsed 266 nm was evaluated with several glades of silica glass.
Synthetic fused silica containing ca. 1000 ppm of OH (ES), silica glass produced from synthetic silica powder melted with oxy-hydrogen flame (S), and plasma torch (SD) were used for this measurement. Pulsed 266 nm laser with 80 kHz was irradiated at the inside of silica glass by using lens with a focal length of 50 mm. Degradation at the focused area was observed from the transmitted laser power. PL from the focused area was also detected with a spectrometer. SD needs nine times longer time for degradation than ES. PL around 640 nm related to the NBOHC (SiO) was gradually increased with degradation change, and rapidly increased when the laser damage occurred at the focused area. The mechanism of the degradation during the laser irradiation of pulsed 266 nm will be presented.
Effect of polishing contamination and surface defects for the LIDT has already been extensively studied in fused silica based transparent optics. The presence of contamination and damage layers on the surface of polished fused silica contributes to a large reduction in LIDT at ultraviolet wavelengths. The magnetic field-assisted finishing (MAF) technique has been shown to be successful in the fine finishing of optical components such as transparent Nd:YAG ceramics. Magnetic field-assisted finishing (MAF) with several tools has previously been applied to fused silica and was shown to improved surface LIDT at 266 nm.
In this paper, the damaged surface of fused silica with enhanced damage resistance after MAF was analyzed to classify the MAF processed condition. Irradiated energy density and damaged volume calculated from depth geometry were measured with a white color interference microscope (Zygo: Zegage). Fused silica substrates polished with CeO2 compounds were prepared as workpieces, and the surface roughness was about 0.3 nm Sq after optical polishing. Material removal over 100 nm occurred with the MAF process, however the final surface roughness did not change. The LIDT at a laser wavelength of 266 nm of processed surfaces was about 1.4 times higher than for the as-polished surface. The damaged volume of as-polished surface was linearly increased as increase in the irradiated energy density. In contrast, MAF processed surface showed little change for the damaged volume. The damage morphology will be also discussed.
For the semiconductor and liquid crystal display manufacturing process, resist removal by using laser irradiation has been investigated instead of conventional processes such as oxygen plasma and chemical method. An advanced laser resist stripping method for the positive-tone diazonaphthoquinone (DNQ) / novolak resist was successfully developed without causing the laser damage to the Si wafer. The pulsed laser irradiation in water can improve the resist stripping effect when compared with that of conventional atmosphere irradiation, however, the mechanism has yet to be clarified.
In this study, we investigated the analysis of resist stripping phenomenon by using a high-speed laser imaging system. A pulsed laser at 640 nm (pulse duration: 40 ns) was used as an illumination laser and a CCD camera detected the reflectance image on the sample. Time resolution of this system depended on the pulse duration of illumination laser. Time-resolved images were acquired based on the “1-on-1” method. Time-resolved images were acquired from 40 ns to 10 us after the laser irradiation. At the laser irradiated spot, changes of the resist were observed after 40 ns from the laser irradiation. The resist was completely stripped from the Si wafer surface after 10 us. The duration of resist removal phenomenon in the water condition was longer than that in the normal atmosphere condition. A resist stripping mechanism could be elucidated by combining experimental high-speed laser imaging and a finite element (FE) analysis. The mechanism of the resist stripping in the water condition will be presented.
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