Dr. Alexey R. Kovsh Profile

Dr. Alexey R. Kovsh

at Arista Networks

SPIE Involvement:

Author

Publications (39)

Proceedings Article | 25 February 2017 Presentation + Paper

Presentation + Paper

Progress on high-power 808nm VCSELs and applications

Delai Zhou, Jean-Francois Seurin, Guoyang Xu, Robert Van Leeuwen, Alexander Miglo, Qing Wang, Alexey Kovsh, Chuni Ghosh

Proceedings Volume 10122, 1012206 (2017) https://doi.org/10.1117/12.2253228

KEYWORDS: Vertical cavity surface emitting lasers, High power lasers, Nd:YAG lasers, Solid state lasers, Solid state electronics, Semiconductor lasers, Optics manufacturing, Crystals, Laser crystals, Defense and security, Q switched lasers, Reliability, Semiconducting wafers, Absorption, Diode pumped solid state lasers

Read Abstract +

Proceedings Article | 17 February 2017 Presentation + Paper

Presentation + Paper

Passively Q-switched VCSEL-pumped Nd:YAG laser with 47 mJ pulse energy

Robert Van Leeuwen, Bing Xu, Qing Wang, Guoyang Xu, Delai Zhou, Alexey Kovsh, Jean-Francois Seurin, Chuni Ghosh

Proceedings Volume 10082, 100820L (2017) https://doi.org/10.1117/12.2252311

KEYWORDS: Vertical cavity surface emitting lasers, Nd:YAG lasers, Q switched lasers, Diode pumped solid state lasers, Semiconductor lasers, Pulsed laser operation, Laser applications, Laser energy, Energy efficiency, Q switching, High power lasers, Laser packaging, Heatsinks

Read Abstract +

Proceedings Article | 23 February 2010 Paper

Paper

Cost-effective WDM optical interconnects enabled by quantum dot comb lasers

D. Livshits, D. Yin, A. Gubenko, I. Krestnikov, S. Mikhrin, A. Kovsh, G. Wojcik

Proceedings Volume 7607, 76070W (2010) https://doi.org/10.1117/12.843587

KEYWORDS: Wavelength division multiplexing, Quantum dots, Optical interconnects, Laser applications, Modulation, Optoelectronics, Current controlled current source, Diodes, Semiconductor lasers, Fabry–Perot interferometers

Read Abstract +

Proceedings Article | 3 December 2009 Paper

Paper

Laser diode comb spectrum amplification preserving low RIN for WDM applications

D. Yin, A. Gubenko, I. Krestnikov, D. Livshits, S. Mikhrin, A. Kovsh, G. Wojcik

Proceedings Volume 7631, 76311R (2009) https://doi.org/10.1117/12.852219

KEYWORDS: Wavelength division multiplexing, Quantum dots, Modulation, Semiconductor lasers, Computing systems, Eye, WDM-PON, Light sources, Waveguides, Optical filters

Read Abstract +

Proceedings Article | 7 February 2009 Paper

Paper

120°C 20 Gbit/s operation of 980nm VCSEL based on sub-monolayer growth

Friedhelm Hopfer, Alex Mutig, Gerrit Fiol, Phillip Moser, Dejan Arsenijevic, Vitaly Shchukin, Nikolai Ledentsov, Sergey Mikhrin, Igor Krestnikov, Daniel Livshits, Alexey Kovsh, Matthias Kuntz, Dieter Bimberg

Proceedings Volume 7229, 72290C (2009) https://doi.org/10.1117/12.813064

KEYWORDS: Modulation, Vertical cavity surface emitting lasers, Temperature metrology, Indium gallium arsenide, Resistance, Semiconductor lasers, Quantum wells, Oxides, Detection theory, Signal analysis

Read Abstract +

Proceedings Article | 3 February 2009 Paper

Paper

A single comb laser source for short reach WDM interconnects

Gregory Wojcik, Dongliang Yin, Alexey Kovsh, Alexey Gubenko, Igor Krestnikov, Sergey Mikhrin, Daniil Livshits, David Fattal, Marco Fiorentino, Raymond Beausoleil

Proceedings Volume 7230, 72300M (2009) https://doi.org/10.1117/12.816278

KEYWORDS: Wavelength division multiplexing, Modulation, Laser sources, Semiconductor lasers, Quantum dots, Current controlled current source, Erbium, Chromium, Eye, Optical pumping

Read Abstract +

Proceedings Article | 1 May 2008 Paper

Paper

Quantum dot comb-laser as efficient light source for silicon photonics

A. Kovsh, A. Gubenko, I. Krestnikov, D. Livshits, S. Mikhrin, J. Weimert, L. West, G. Wojcik, D. Yin, C. Bornholdt, N. Grote, M. Maximov, A. Zhukov

Proceedings Volume 6996, 69960V (2008) https://doi.org/10.1117/12.784949

KEYWORDS: Semiconductor lasers, Optical filters, Quantum dots, Silicon photonics, Modulation, Light sources, Quantum dot lasers, Waveguides, Fabry–Perot interferometers, Dense wavelength division multiplexing

Read Abstract +

Proceedings Article | 5 March 2008 Paper

Paper

Quantum dot photonics: edge emitter amplifier, and VCSEL

F. Hopfer, M. Kuntz, M. Lämmlin, G. Fiol, N. Ledentsov, A. Kovsh, S. Mikrin, I. Kaiander, V. Haisler, A. Lochmann, A. Mutig, C. Schubert, A. Umbach, V. Ustinov, U. Pohl, D. Bimberg

Proceedings Volume 7009, 700902 (2008) https://doi.org/10.1117/12.793286

KEYWORDS: Vertical cavity surface emitting lasers, Picosecond phenomena, Modulation, Quantum dots, Mode locking, Semiconductor lasers, Pulsed laser operation, Indium gallium arsenide, Eye

Read Abstract +

Proceedings Article | 1 February 2008 Paper

Paper

Recent advances in long wavelength quantum dot based lasers

A. Ramdane, A. Martinez, S. Azouigui, D.-Y. Cong, K. Merghem, A. Akrout, C. Gosset, G. Moreau, F. Lelarge, B. Dagens, J.-G. Provost, A. Accard, O. Le Gouezigou, I. Krestnikov, A. Kovsh, M. Fischer

Proceedings Volume 6900, 690008 (2008) https://doi.org/10.1117/12.761699

KEYWORDS: Mode locking, Quantum dots, Semiconductor lasers, Tolerancing, Quantum wells, Clocks, Gallium arsenide, Active optics, Laser applications, Modulation

Read Abstract +

Proceedings Article | 7 February 2007 Paper

Paper

Novel concepts for ultrahigh-speed quantum-dot VCSELs and edge-emitters

N. Ledentsov, F. Hopfer, A. Mutig, V. Shchukin, A. V. Savel'ev, G. Fiol, M. Kuntz, V. A. Haisler, T. Warming, E. Stock, S. S. Mikhrin, A. R. Kovsh, C. Bornholdt, H. Eisele, M. Dähne, N. D. Zakharov, P. Werner, D. Bimberg

Proceedings Volume 6468, 64681O (2007) https://doi.org/10.1117/12.717248

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Modulators, Refractive index, Electro optics, Indium arsenide, Gallium arsenide, Transmission electron microscopy, Continuous wave operation

Read Abstract +

Proceedings Article | 7 February 2007 Paper

Paper

Extending the wavelength range of single-emitter diode lasers for medical and sensing applications: 12xx-nm quantum dots, 2000-nm wells, > 5000-nm cascade lasers

Paul Crump, Steve Patterson, Sandrio Elim, Shiguo Zhang, Mike Bougher, Jason Patterson, Suhit Das, Weimin Dong, Mike Grimshaw, Jun Wang, Damian Wise, Mark DeFranza, Jake Bell, Jason Farmer, Mark DeVito, Rob Martinsen, Alexey Kovsh, Fatima Toor, Claire Gmachl

Proceedings Volume 6456, 64560E (2007) https://doi.org/10.1117/12.706177

KEYWORDS: Quantum wells, Quantum dots, Semiconductor lasers, Quantum cascade lasers, Gallium arsenide, Quantum efficiency, High power lasers, Crystals, Metalorganic chemical vapor deposition, Indium gallium arsenide

Read Abstract +

Proceedings Article | 6 July 2006 Paper

Paper

20-Gb/s direct modulation of 980 nm VCSELs based on submonolayer deposition of quantum dots

F. Hopfer, A, Mutig, G. Fiol, M. Kuntz, S. Mikhrin, I. Krestnikov, D. Livshits, A. Kovsh, C. Bornholdt, V. Shchukin, N. Ledentsov, V. Gaysler, N. Zakharov, P. Werner, D. Bimberg

Proceedings Volume 6350, 635003 (2006) https://doi.org/10.1117/12.693006

KEYWORDS: Modulation, Vertical cavity surface emitting lasers, Quantum dots, Indium arsenide, Gallium arsenide, Eye, Indium gallium arsenide, Quantum wells, Transmission electron microscopy, Gallium

Read Abstract +

Proceedings Article | 6 July 2006 Paper

Paper

Self organized quantum dots for 1.3 µm photonic devices

M. Laemmlin, G. Fiol, C. Meuer, M. Kuntz, F. Hopfer, N. Ledentsov, A. Kovsh, D. Bimberg

Proceedings Volume 6350, 63500M (2006) https://doi.org/10.1117/12.692912

KEYWORDS: Mode locking, Quantum dots, Modulation, Picosecond phenomena, Optical amplifiers, Semiconductor lasers, Pulsed laser operation, Eye, Laser optics, Ultrafast phenomena

Read Abstract +

Proceedings Article | 13 June 2006 Paper

Paper

Semiconductor quantum dot lasers

Victor Ustinov, Alexey Zhukov, Anton Egorov, Alexey Kovsh, Nikolai Maleev, Elizaveta Semenova, Mikhail Maximov, Nikolai Ledentsov, Zhores Alferov

Proceedings Volume 5946, 594615 (2006) https://doi.org/10.1117/12.639318

Read Abstract +

Proceedings Article | 14 April 2006 Paper

Paper

Absorber length optimisation for sub-picosecond pulse generation in passively mode-locked 1.3μm quantum dot laser diodes

A. Rae, M. Thompson, R. Penty, I. White, A. Kovsh, S. Mikhrin, D. Livshits, I. Krestnikov

Proceedings Volume 6184, 61841F (2006) https://doi.org/10.1117/12.662892

KEYWORDS: Mode locking, Semiconductor lasers, Quantum dot lasers, Picosecond phenomena, Pulsed laser operation, Single mode fibers, Diodes, Quantum dots, Second-harmonic generation, Telecommunications

Read Abstract +

Proceedings Article | 22 February 2006 Paper

Paper

1.3-1.5 µm quantum dot lasers on foreign substrates: growth using defect reduction technique, high-power CW operation, and degradation resistance

N. Ledentsov, A. Kovsh, V. Shchukin, S. Mikhrin, I. Krestnikov, A. Kozhukhov, L. Karachinsky, M. Maximov, I. Novikov, Yu. Shernyakov, I. Soshnikov, A. Zhukov, Yu. Musikhin, V. Ustinov, N. Zakharov, P. Werner, T. Kettler, K. Posilovic, D. Bimberg, M. Hu, H. Nguyen, K. Song, Chung-en Zah

Proceedings Volume 6133, 61330S (2006) https://doi.org/10.1117/12.641483

KEYWORDS: Gallium arsenide, Continuous wave operation, Semiconductor lasers, Quantum wells, Quantum dots, Indium arsenide, Indium gallium arsenide, Laser stabilization, High power lasers

Read Abstract +

We have performed a systematic study of structural and optical properties of Quantum dot (QDs) lasers based on InAs/InGaAs quantum dots grown on GaAs substrates emitting in the 1.3 - 1.5 μm range. 1.3 μm range QD lasers are grown using GaAs as matrix material. It is shown that the lasers, grown with large number of QD stacks are metamorphic, with plastic relaxation occurring through the formation of misfit dislocations. Thus, 1.3 μm QD lasers with large number of stacks grown without strain compensation are metamorphic. Another type of defects is related to local dislocated clusters, which are the most dangerous. When proper optimization of the growth conditions is carried out, including a selective thermal etching off of statistically formed dislocated clusters through the defect-reduction technique (DRT), no significant impact of misfit dislocations on the degradation robustness is observed. In uncoated devices a high cw single mode power of ~700 mW is realized limited by thermal roll-over, which is not affected by 500 h ageing at room temperature. At elevated temperatures the main degradation mechanism revealed is catastrophic optical mirror damage (COMD). When the facet are passivated, the devices show the extrapolated operation lifetime in excess of 10⁶ h at 40°C at ~100 mW cw single mode output power. Longer wavelength (1.4 - 1.5 μm) devices are grown on metamorphic (In,Ga,Al)As layers deposited on GaAs substrates. In this case, the plastic relaxation occurs through formation of both misfit and threading dislocations. The latter kill the device performance. Using DRT in this case enables blocking of threading dislocation with growth of QDs in defect-free upper layers. DRT is realized by selective capping of the defect-free areas and high-temperature etching of nano-holes at the non-capped regions near the dislocation. The procedure results in etching of holes and is followed by fast lateral overgrowth with merger of the growth fronts. If the defect does not propagate into the upper layer when the hole is capped, the upper layers become defect-free. Lasers based on this approach exhibited emission wavelength in the 1.4 -1.5 μm range with a differential quantum efficiency of about ~50%. The narrow-stripe lasers operate in a single transverse mode and withstand continuous current density above 20 kA cm^-2 without degradation. A maximum continuous-wave output power of 220 mW limited by thermal roll-over is obtained. No beam filamentation was observed up to the highest pumping levels. Narrow stripe devices with as-cleaved facets are tested for 60°C (800 h) and 70°C (200 h) on-chip temperature. No noticeable degradation has been observed at 50 mW cw single mode output power. This shows the possibility of degradation-robust devices on foreign substrates. The technology opens a way for integration of various III-V materials and may target degradation-free lasers on silicon for further convergence of computing and communications.

Proceedings Article | 28 April 2005 Paper

Paper

Temperature dependent output characteristics of p-doped 1.1 and 1.3 µm quantum dot lasers

Z. Mi, S. Fathpour, P. Bhattacharya, A. Kovsh, S. Mikhrin, I. Krestnikov, A. Kozhukhov, N. Ledentsov

Proceedings Volume 5722, (2005) https://doi.org/10.1117/12.589891

KEYWORDS: Quantum dot lasers, Modulation, Laser damage threshold, Gallium, Quantum dots, Temperature metrology, Gallium arsenide, Electrons, Heterojunctions, Measurement devices

Read Abstract +

Proceedings Article | 28 April 2005 Paper

Paper

Edge and surface-emitting tilted cavity lasers

N. Ledentsov, V. Shchukin, A. Kovsh, S. Mikhrin, I. Krestnikov, A. Kozhukhov, N. Gordeev, L. Karachinsky, M. Maximov, I. Novikov, Yu. Shernyakov

Proceedings Volume 5722, (2005) https://doi.org/10.1117/12.601953

KEYWORDS: Refractive index, Reflectivity, Gallium arsenide, Quantum wells, Semiconductor lasers, Waveguides, Vertical cavity surface emitting lasers, Electroluminescence, Near field, Reflection

Read Abstract +

Proceedings Article | 31 January 2005 Paper

Paper

Long-wavelength VCSEL devices on GaAs substrates

Jim-Young Chi, Hung-Pin Yang, Chen-Ming Lu, Ru-Shang Hsiao, Chih-Hung Chiou, Cheng-Hung Lee, Chun-Yuan Huang, Hsin-Chieh Yu, Chin-May Wang, Kuen-Fong Lin, Chih-Ming Lai, Li-Chung Wei, Nikolai Maleev, Alexey Kovsh, Chia-Pin Sung, Jyh-Shyang Wang, Jenn-Fang Chen, Tsin-Dong Lee

Proceedings Volume 5624, (2005) https://doi.org/10.1117/12.581108

KEYWORDS: Vertical cavity surface emitting lasers, Gallium arsenide, Quantum wells, Metalorganic chemical vapor deposition, Indium gallium arsenide, Near field optics, Quantum dots, Continuous wave operation, Semiconductors

Read Abstract +

Proceedings Article | 31 January 2005 Paper

Paper

QD lasers: physics and applications

Nikolai Ledentsov, Alexey Kovsh, Vitaly Shchukin, Sergey Mikhrin, Igor Krestnikov, A. Kozhukhov, Leonid Karachinsky, Mikhail Maximov, Innokenty Novikov, Yuri Shernyakov, Ilja Soshnikov, Alexey Zhukov, Efim Portnoi, Victor Ustinov, D. Gerthsen, Pallab Bhattacharya, N. Zakharov, P. Werner, Friedhelm Hopfer, Matthias Kuntz, Dieter Bimberg

Proceedings Volume 5624, (2005) https://doi.org/10.1117/12.570284

KEYWORDS: Gallium arsenide, Semiconductor lasers, Vertical cavity surface emitting lasers, Indium arsenide, Annealing, Quantum dots, Laser stabilization, Transmission electron microscopy, Heterojunctions, Indium gallium arsenide

Read Abstract +

Proceedings Article | 1 September 2004 Paper

Paper

Damping and feedback characteristics of quantum dot semiconductor lasers

Guillaume Huyet, Stephen Hegarty, David O'Brien, Alexander Uskov, S. Melnik, Olwen Carroll, John McInerney, Thorsten Kettler, Matthias Laemmlin, Dieter Bimberg, Victor Ustinov, Sergey Mikhrin, Alexey Zhukov, Alexey Kovsh

Proceedings Volume 5452, (2004) https://doi.org/10.1117/12.545457

KEYWORDS: Semiconductor lasers, Quantum dots, Laser optics, Quantum wells, Microwave radiation, Measurement devices, Laser stabilization, Calcium, Optical isolators, Quantum dot lasers

Read Abstract +

Proceedings Article | 1 September 2004 Paper

Paper

Mode locking of InGaAs quantum dot lasers

Mark Thompson, Kay Tan, Claudio Marinelli, Kevin Williams, Roman Sellin, Richard Penty, Ian White, Matthias Kuntz, Dongxun Ouyang, Ilia Kaiander, Nikolai Ledentsov, Dieter Bimberg, Victor Ustinov, Alexey Zhukov, Alexey Kovsh, Franz Visinka, Stephan Jochum, Stephan Hansmann, Dae-Joon Kang, Mark Blamire

Proceedings Volume 5452, (2004) https://doi.org/10.1117/12.545749

KEYWORDS: Mode locking, Oscilloscopes, Pulsed laser operation, Semiconductor lasers, Etching, Gallium, Quantum dot lasers, Quantum dots, Waveguides, Fourier transforms

Read Abstract +

Proceedings Article | 1 September 2004 Paper

Paper

MBE-grown 1.3 micron InGaAsN/GaAs double QW VCSELs with very low-threshold current density under room temperature CW operation

Chih-Ming Lai, Jyh-Shyang Wang, Ru-Shang Hsiao, Li-Chung Wei, Gray Lin, Kun-Feng Lin, Hui-Yu Liu, Alexey Kovsh, Nikolai Maleev, Daniil Livshits, Jenn-Fang Chen, Jim-Young Chi

Proceedings Volume 5452, (2004) https://doi.org/10.1117/12.545345

KEYWORDS: Nitrogen, Gallium arsenide, Quantum wells, Vertical cavity surface emitting lasers, Pulsed laser operation, Continuous wave operation, Indium, Plasma, Laser damage threshold, Annealing

Read Abstract +

Proceedings Article | 2 August 2004 Paper

Paper

Tilted cavity laser (Critical Review Lecture)

Vitaly Shchukin, Nikolai Ledentsov, S. Mikhrin, I. Krestnikov, A. Kozhukhov, Alexey Kovsh, Leonid Karachinsky, Mikhail Maximov, Innokenty Novikov, Yuri Shernyakov

Proceedings Volume 5509, (2004) https://doi.org/10.1117/12.562390

KEYWORDS: Reflectivity, Semiconductor lasers, Electroluminescence, Quantum wells, Refractive index, Gallium arsenide, Quantum dots, Reflectors, Laser stabilization, Temperature metrology

Read Abstract +

Proceedings Article | 18 June 2004 Paper

Paper

Long-wavelength (1.3-1.5 micron) quantum dot lasers based on GaAs

Alexey Kovsh, Nikolai Ledentsov, Sergei Mikhrin, Alexey Zhukov, Daniil Livshits, Nikolay Maleev, Mikhail Maximov, Victor Ustinov, Alexey Gubenko, Igor Gadjiev, Efim Portnoi, Jyh Shyang Wang, Jim Chi, Donald Ouyang, Dieter Bimberg, James Lott

Proceedings Volume 5349, (2004) https://doi.org/10.1117/12.531245

KEYWORDS: Semiconductor lasers, Gallium arsenide, Vertical cavity surface emitting lasers, Quantum wells, Continuous wave operation, Diodes, Mode locking, Gallium, Laser damage threshold, Laser applications

Read Abstract +

Proceedings Article | 16 June 2004 Paper

Paper

Characteristics of InGa(N)As VCSELs for fiber optic applications

Hung-Pin Yang, Chen-Ming Lu, Ru-Shang Hsiao, Chih-Hung Chiou, Cheng-Hung Lee, Chun-Yuan Huang, Hsin-Chieh Yu, Chin-May Wang, Kuen Fong Lin, Chih-Ming Lai, Li-Chung Wei, Nikolay Maleev, Alexey Kovsh, Chia-Pin Sung, Jyh-Shyang Wang, Jenn-Fang Chen, Tsin-Dong Lee, Jim Chi

Proceedings Volume 5364, (2004) https://doi.org/10.1117/12.528157

KEYWORDS: Vertical cavity surface emitting lasers, Quantum wells, Gallium arsenide, Continuous wave operation, Fiber optics, Semiconducting wafers, Metalorganic chemical vapor deposition, Nitrogen, Indium gallium arsenide

Read Abstract +

Proceedings Article | 14 June 2004 Paper

Paper

Reduced sensitivity to external feedback in quantum dot lasers

Guillaume Huyet, David O'Brien, Stephen Hegarty, John McInerney, Dieter Bimberg, Christian Ribbat, V. Ustinov, S. Mikhrin, A. Kovsh, A. V. Uskov

Proceedings Volume 5361, (2004) https://doi.org/10.1117/12.533016

KEYWORDS: Semiconductor lasers, Quantum dots, Quantum wells, Laser optics, Quantum dot lasers, Microwave radiation, Measurement devices, Laser stabilization, Optical isolators, Waveguides

Read Abstract +

Proceedings Article | 11 May 2004 Paper

Paper

Mode-locked quantum dot lasers for picosecond pulse generation

Mark Thompson, Kay Ti Tan, Claudio Marinelli, Kevin Williams, Roman Sellin, Richard Penty, Ian White, Matthias Kuntz, Matthias Laemmlin, Dongxun Ouyang, Ilia Kaiander, Nikolai Ledentsov, Dieter Bimberg, V. Ustinov, A. Zhukov, A. Kovsh, Franz Visinka, Stephan Jochum, Stephan Hansmann, Dae-Joon Kang, Mark Blamire

Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.531284

KEYWORDS: Mode locking, Quantum dot lasers, Pulsed laser operation, Etching, Picosecond phenomena, Oscilloscopes, Semiconductor lasers, Quantum dots, Gallium, Spectrum analysis

Read Abstract +

Proceedings Article | 25 July 2003 Paper

Paper

Recent advances in long-wavelength GaAs-based quantum dot lasers

Nikolai Ledentsov, Dieter Bimberg, Roman Sellin, C. Ribbat, Victor Ustinov, Alexey Zhukov, Alexey Kovsh, Mikhail Maximov, Yuri Shernyakov

Proceedings Volume 4986, (2003) https://doi.org/10.1117/12.474390

KEYWORDS: Vertical cavity surface emitting lasers, Gallium arsenide, Quantum dots, Semiconductors, Quantum wells, Indium arsenide, Semiconductor lasers, Gallium, Quantum dot lasers

Read Abstract +

Proceedings Article | 1 July 2003 Paper

Paper

High-performance of single mode InAs/InGaAs/GaAs quantum dot lasers of 1.3-micron range

Daniil Livshits, Alexey Kovsh, Nikolay Maleev, Alexey Zhukov, Victor Ustinov, Nikolai Ledentsov, Zhores Alferov, Dieter Bimberg, Gray Lin, Jim Chi

Proceedings Volume 4999, (2003) https://doi.org/10.1117/12.479825

KEYWORDS: Laser damage threshold, Continuous wave operation, Laser applications, Gallium arsenide, Semiconductor lasers, Indium arsenide, Gallium, Indium gallium arsenide, Vertical cavity surface emitting lasers, Temperature metrology

Read Abstract +

Proceedings Article | 11 June 2003 Paper

Paper

Formation specifity of InAs/GaAs submonolayer superlattice

Ilja Soshnikov, Boris Volovik, Alexey Kovsh, Alexey Zhukov, Anrei Tsatsul'nikov, O. Gorbenko, N. Ledentsov, Victor Ustinov, P. Werner, N. Zakharov, D. Gerthsen

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.511275

KEYWORDS: Superlattices, Heterojunctions, Gallium arsenide, Optical properties, Image analysis, Indium arsenide, Digital signal processing, Indium, Electron microscopes, Image processing

Read Abstract +

Proceedings Article | 11 June 2003 Paper

Paper

High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells

Alexey Kovsh, Alexey Zhukov, Nikolay Maleev, Sergei Mikhrin, A. Vasil'ev, Yuri Shernyakov, Daniil Livshits, Mikhail Maximov, D. Sizov, N. Kryzhanovskaya, Nikita Pikhtin, V. Kapitonov, Ilya Tarasov, N. Ledentsov, Victor Ustinov, Jyh-Shyang Wang, Li-Chung Wei, Gray Lin, Jim Chi

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.514262

KEYWORDS: High power lasers, Quantum wells, Quantum dots, Gallium arsenide, Semiconductor lasers, Indium arsenide, Indium gallium arsenide, Cladding, Solids, Laser damage threshold

Read Abstract +

Proceedings Article | 11 June 2003 Paper

Paper

Quanum-dot-like composition fluctuations in near-field magneto-photoluminescence spectra of InGaAsN alloys

Alexander Mintairov, P. Blagnov, James Merz, Victor Ustinov, A. Vlasov, Alexey Kovsh, Jyh-Shyang Wang, Li-Chung Wei, Jim Chi

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.511847

KEYWORDS: Near field, Nitrogen, Excitons, Solids, Nanolithography, Luminescence, Indium, Spectroscopy, Magnetism, Near field optics

Read Abstract +

Proceedings Article | 11 June 2003 Paper

Paper

The carriers localization influence on the optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxy

N. Kryzhanovskaya, A. Gladyshev, D. Sizov, Alexey Kovsh, Anrei Tsatsul'nikov, Jim Chi, Jyh-Shyang Wang, Li-Chung Wei, Victor Ustinov

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.510522

KEYWORDS: Optical properties, Annealing, Gallium arsenide, Epitaxy, Nitrogen, Heterojunctions, Chemical species, Stereolithography, Superlattices, Luminescence

Read Abstract +

Proceedings Article | 11 June 2003 Paper

Paper

MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates

Nikolay Maleev, Alexey Kovsh, Alexey Zhukov, Sergei Mikhrin, A. Vasil'ev, E. Semenova, Yuri Shernyakov, E. Nikitina, N. Kryjanovskaya, D. Sizov, Ilja Soshnikov, Mikhail Maximov, N. Ledentsov, Victor Ustinov, Dieter Bimberg, Zhores Alferov

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.514327

KEYWORDS: Gallium arsenide, Laser damage threshold, Quantum dots, Heterojunctions, Epitaxy, Semiconductor lasers, Vertical cavity surface emitting lasers, Laser stabilization, Indium gallium arsenide, Information operations

Read Abstract +

Proceedings Article | 12 June 2002 Paper

Paper

1.3-um edge- and surface-emitting quantum dot lasers grown on GaAs substrates

Victor Ustinov, Alexey Zhukov, Nikolay Maleev, Anton Egorov, Alexey Kovsh, Sergei Mikhrin, Nikolai Cherkashin, Yuri Shernyakov, Mikhail Maximov, Anrei Tsatsul'nikov, Nikolai Ledentsov, Zhores Alferov, James Lott, Dieter Bimberg

Proceedings Volume 4646, (2002) https://doi.org/10.1117/12.470541

KEYWORDS: Quantum wells, Vertical cavity surface emitting lasers, Quantum dots, Gallium arsenide, Laser damage threshold, Indium arsenide, Solids, Continuous wave operation, Active optics, Internal quantum efficiency

Read Abstract +

Proceedings Article | 8 March 2001 Paper

Paper

Toward far- and mid-IR intraband lasers based on hot carrier intervalley/real-space transfer in multiple quantum well systems

Vladimir Aleshkin, Alexander Andronov, A. Antonov, E. Demidov, Alexander Dubinov, Vladimir Gavrilenko, Dmitry Revin, B. Zvonkov, N. Zvonkov, E. Uskova, Leonid Vorobjev, D. Firsov, S. Danilov, Ilya Titkov, V. Shalygin, Alexey Zhukov, Alexey Kovsh, Victor Ustinov

Proceedings Volume 4318, (2001) https://doi.org/10.1117/12.417598

KEYWORDS: Mid-IR, Quantum wells, Far infrared, Diodes, Semiconductor lasers, Gallium arsenide, Monte Carlo methods, Absorption, Laser development

Read Abstract +

Proceedings Article | 12 November 1999 Paper

Paper

Superlattice detector as a fast direct detector and autocorrelator for terahertz radiation

Stephan Winnerl, Ekkehard Schomburg, S. Brandl, F. Klappenberger, Karl Renk, Alexander van der Meer, J. Hovenier, R. van Es, T. Klaasen, A. Ignatov, Nikolai Ledentsov, Victor Ustinov, Alexey Zhukov, Alexey Kovsh, Petr Kop'ev

Proceedings Volume 3795, (1999) https://doi.org/10.1117/12.370155

KEYWORDS: Superlattices, Sensors, Terahertz radiation, Picosecond phenomena, Antennas, Signal detection, Oscilloscopes, Temporal resolution, Gallium arsenide, Absorption

Read Abstract +

Proceedings Article | 4 November 1999 Paper

Paper

Spontaneous IR intersublevel emission from quantum dots conditioned by main interband lasing

Leonid Vorobjev, D. Firsov, V. Shalygin, Victor Tulupenko, Yuri Shernyakov, A. Egorov, Alexey Zhukov, Alexey Kovsh, Petr Kop'ev, I. Kochnev, Nikolai Ledentsov, Mikhail Maximov, Victor Ustinov, Zhores Alferov

Proceedings Volume 3890, (1999) https://doi.org/10.1117/12.368363

KEYWORDS: Quantum wells, Quantum dots, Near infrared, Phonons, Semiconductor lasers, Diodes, Optical filters, Laser development, Far infrared lasers, Far infrared

Read Abstract +

Showing 5 of 39 publications

SIGN IN TO:

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Advertisement

Advertisement