We developed novel resist materials and developer with fluorine atoms. Fluorine expected to show higher absorption coefficient than carbon because of its higher atomic number. From QCM, GPC, and SEM evaluation, it was found that ZEP-Y1 and ZEP-Y2 have a potential for next generation resist materials. The combination of resist material including fluorine atoms and fluorine solution is promising. This study showed the possibility of the extension of range for resist materials and developers.
Metal oxide nanoparticle resists are promising materials for highly-resolving high-throughput patterning. However, their performance is still inadequate for the application to the production of semiconductor devices. In this study, the dependence of the relationship between chemical gradient and line width roughness (LWR) on the pattern duty, acid generator, and developer was investigated using a zirconia (ZrO2) nanoparticle resist. The line-and-space patterns of ZrO2 nanoparticle resists were analyzed on the basis of the EUV sensitization mechanism. LWR was roughly inversely proportional to the chemical gradient. The proportionality constant decreased with the increase of the ratio of nominal space width to the nominal line width. The proportionality constant for n-butyl acetate was smaller than that for an alternative developer with a high polarity. The proportionality constant decreased by the addition of an acid generator. The improvement of dissolution process and the suppression of secondary electron migration are essential to the suppression of LWR in the ZrO2 nanoparticle resist.
We investigated the dissolution kinetics of poly(4-hydroxystyrene) (PHS) in an alkali developer with tetramethylammoniumhydroxide (TMAH). Experiments using PHS with different molecular weights and molecular weight dispersions and developer with different concentrations of TMAH led to the clarification of the dissolution behavior. Not only a change in the dissolution time but also a change in the dissolution behavior was observed upon changing the concentration of the developer. The dissolution behavior depends on an index calculated from values indicating the effects of swelling and dissolving. The dissolution occurred through the swelling of the polymer bulk and the subsequent diffusion of polymer chains into the solution bulk. The development using the alkali aqueous solution system was complex. The swelling rate should not be much larger than the dissolving rate for the development of high-resolution resists because a high swelling rate causes the generation of defects during the fabrication of fine structures.
We investigated the effects of molecular weight distribution (molecular weight and dispersity) and developer on the sensitivity and resolution of ZEP series (Zeon Corporation). ZEP520A, ZEP7000, and ZEP530A(under development) are scission-type polymer resists composed of the same structural unit with different molecular weight and dispersity. The sensitivities of ZEP530A (narrow dispersity) and ZEP7000 (high molecular weight) are approximately same and lower than ZEP520A (standard). The resolution of ZEP530A was the highest among the ZEP series.
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