Dr. Bart Smeets Profile

Dr. Bart Smeets

at ASML Netherlands B.V.

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Author

Publications (7)

Proceedings Article | 10 April 2024 Presentation + Paper

Driving exposure accuracy and cost-of-ownership on DUV immersion and dry-NXT scanner products

Wim de Boeij, Bart Smeets, Massimo Viola, Peter van Gils, Elliot Oti, Stefan Lichiardopol, Jelmer Kamminga, Mohamed El Kodadi, Aditya Deshpande, Alberto Pirati

Proceedings Volume 12953, 129530S (2024) https://doi.org/10.1117/12.3009961

KEYWORDS: Scanners, Distortion, Deep ultraviolet

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Proceedings Article | 28 April 2023 Presentation + Paper

Supporting future DRAM overlay and EPE roadmaps with the NXT:2100i

Bart Smeets, Paul Aben, Friso Klinkhamer, Jean Philippe van Damme, Bart Paarhuis, Raaja Ganapathy Subramanian, Mohamed El Kodadi, Stefan Lichiardopol, Alberto Pirati, Peter Vanoppen, Wim de Boeij

Proceedings Volume 12494, 124940R (2023) https://doi.org/10.1117/12.2657952

KEYWORDS: Reticles, Distortion, Semiconducting wafers, Overlay metrology, Optical alignment, Scanners, HVAC controls, Sensors, Reproducibility, Deep ultraviolet

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The foundations of leading edge DRAM manufacturing are built on accurate EUV lithography exposures in close synergy with cutting-edge immersion layers as well as advanced patterning schemes (e.g. self-aligned multiple patterning). Final device yield critically depends on the subsequent and accurate stacking of multiple layers with device features of precise width and edge placement. To support the ever-decreasing requirements for both the EUV as well as the DUV, (edge) placement accuracy, scanner enhancements are required on both platforms. In this paper we report on the improvements of the NXT:2100i immersion scanner to further reduce the (edge) placement errors within the die (intra-field) and across the full wafer (inter-field). The NXT:2100i incorporates a new projection optics with built-in distortion manipulator that extends the intra-field correction capability for both X and Y directions. The external overlay interface is extended with the distortion manipulator degrees of freedom to handle high spatial frequent distortion data of a to-be-matched scanner or high spatial frequent overlay fingerprints measured by after develop or after etch metrology. Thermal conditioning of the reticle is improved with a fast conditioned internal reticle library resulting in lower reticle-to-reticle temperature variation. Improved lens metrology (aberrations) and reticle align accuracy (alignment/overlay) is achieved with a better integrated image sensor. Improved alignment accuracy and reduced alignment process dependencies for wafer alignment are realized with 12-colors parallel measurements and by adding more alignment marks measurements at the wafer measure side without throughput impact. In concert with the hardware components, various software algorithms are updated, yielding improved inter- and intra-field overlay setup and improved reticle heating induced overlay. We will detail the specific module performance items as well as the system performance of the NXT:2100i scanner, both in reference (DRAM relevant overlay) to DUV as well as to EUV scanners.

Proceedings Article | 26 May 2022 Presentation + Paper

On-scanner high-spatial-frequency overlay control using a distortion manipulator

Friso Klinkhamer, Bart Smeets, Theo Thijssen, Francis Fahrni, Wim de Boeij, Mohamed El Kodadi, Thilo Pollak, Wolfgang Emer

Proceedings Volume 12051, 120510K (2022) https://doi.org/10.1117/12.2614031

KEYWORDS: Distortion, Scanners, Overlay metrology, Metrology, Lithography, Interfaces, Spatial frequencies, Semiconducting wafers, Extreme ultraviolet lithography

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Proceedings Article | 20 March 2018 Paper

In-resist pattern shift metrology

Anita Bouma, Bart Smeets, Lei Zhang, Thuy T. Vu, Peter de Loijer, Maikel Goosen, Willem van Mierlo, Wendy Liebregts, Bart Rijpers

Proceedings Volume 10587, 105871G (2018) https://doi.org/10.1117/12.2304364

KEYWORDS: Overlay metrology, Diffraction, Wavefront aberrations, Optical aberrations

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Proceedings Article | 17 April 2012 Paper

Investigation and mitigation of field-edge CDU fingerprint for ArFi lithography for 45-nm to sub-28-nm logic nodes

Bertrand Le-Gratiet, Jo Finders, Orion Mouraille, Rene Queens, Maryana Escalante, Bart Smeets, Jan Beltman, Karine Jullian

Proceedings Volume 8352, 83520C (2012) https://doi.org/10.1117/12.918535

KEYWORDS: Photomasks, Modulation, Optical testing, Semiconducting wafers, Critical dimension metrology, Reticles, Modulators, Silicon, Data modeling, Lithography

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Proceedings Article | 4 March 2010 Paper

Analysis of the impact of pupil shape variation by pupil fit modeling

Jin-hyuck Jeon, Chan-ha Park, Hyun-jo Yang, Cheol-kyun Kim, Jin-young Choi, Sang-jin Oh, Dong-gyu Yim, Sung-ki Park, Ki-yeop Park, Young-hong Min, Andre Engelen, Bart Smeets, Joerg Zimmermann

Proceedings Volume 7640, 76400Y (2010) https://doi.org/10.1117/12.846703

KEYWORDS: Scanners, Critical dimension metrology, Shape analysis, Optical proximity correction, Fiber optic illuminators, Semiconducting wafers, Lithography, Control systems, Instrument modeling, Process control

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As K1 factor for mass-production of memory devices has been decreased to almost its theoretical limit, the process window of lithography is getting much smaller and the production yield has become more sensitive to even small variations of the process in lithography. So it is necessary to control the process variations more tightly than ever. In mass-production, it is very hard to extend the production capacity if the tool-to-tool variation of scanners and/or scanner stability through time is not minimized. One of the most critical sources of variation is the illumination pupil. So it is critical to qualify the shape of pupils in scanners to control tool-to-tool variations. Traditionally, the pupil shape has been analyzed by using classical pupil parameters to define pupil shape, but these basic parameters, sometimes, cannot distinguish the tool-to-tool variations. It has been found that the pupil shape can be changed by illumination misalignment or damages in optics and theses changes can have a great effect on critical dimension (CD), pattern profile or OPC accuracy. These imaging effects are not captured by the basic pupil parameters. The correlation between CD and pupil parameters will become even more difficult with the introduction of more complex (freeform) illumination pupils. In this paper, illumination pupils were analyzed using a more sophisticated parametric pupil description (Pupil Fit Model, PFM). And the impact of pupil shape variations on CD for critical features is investigated. The tool-to-tool mismatching in gate layer of 4X memory device was demonstrated for an example. Also, we interpreted which parameter is most sensitive to CD for different applications. It was found that the more sophisticated parametric pupil description is much better compared to the traditional way of pupil control. However, our examples also show that the tool-to-tool pupil variation and pupil variation through time of a scanner can not be adequately monitored by pupil parameters only, The best pupil control strategy is a combination of pupil parameters and simulated CD using measured illumination pupils or modeled pupils.

Proceedings Article | 4 December 2008 Paper

Extending KrF lithography beyond 80nm with the TWINSCAN XT:1000H 0.93NA scanner

Wim de Boeij, Gerald Dicker, Marten de Wit, Frank Bornebroek, Mark Zellenrath, Harm-Jan Voorma, Bart Smeets, Rene Toussaint, Bart Paarhuis, Marteijn de Jong, Dirk Hellweg, Klaus Kornitzer

Proceedings Volume 7140, 71401B (2008) https://doi.org/10.1117/12.805381

KEYWORDS: Semiconducting wafers, Scanners, Fiber optic illuminators, Lithography, Imaging systems, Overlay metrology, Polarization, Monochromatic aberrations, Reticles, Optical design

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Showing 5 of 7 publications

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