Dr. Bjoern Sass Profile

Dr. Bjoern Sass

at Advanced Mask Technology Ctr

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Publications (6)

Proceedings Article | 25 May 2010 Paper

Haze risk reduced mask manufacturing process

Pavel Nesladek, Valentine Baudiquez, Eugen Foca, Björn Sass

Proceedings Volume 7748, 77480F (2010) https://doi.org/10.1117/12.864119

KEYWORDS: Photomasks, Air contamination, Contamination, Manufacturing, Crystals, Ultraviolet radiation, Ions, Diffusion, Quartz, Distortion

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Proceedings Article | 25 May 2010 Paper

New type of haze formation on masks fabricated with Mo-Si blanks

E. Foca, A. Tchikoulaeva, B. Sass, C. West, P. Nesladek, R. Horn

Proceedings Volume 7748, 774811 (2010) https://doi.org/10.1117/12.864478

KEYWORDS: Air contamination, Quartz, Photomasks, Inspection, Ions, Chemical analysis, Scanning electron microscopy, Nitrogen, Data modeling, Oxidation

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Proceedings Article | 17 October 2008 Paper

Process control of chrome dry etching by complete characterization of the RF power delivery

Björn Sass, Ralf Schubert, Thomas Jakubski, Sebastian Mauermann, Pavel Nesladek, Andreas Wiswesser, Karl-Heinz Gindra, Ray Malone

Proceedings Volume 7122, 71220E (2008) https://doi.org/10.1117/12.801080

KEYWORDS: Sensors, Photomasks, Etching, Plasma, Critical dimension metrology, Radio frequency circuits, Resistance, Dry etching, Process control, Plasma etching

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Proceedings Article | 2 May 2008 Paper

CDO budgeting

Pavel Nesladek, Andreas Wiswesser, Björn Sass, Sebastian Mauermann

Proceedings Volume 6792, 67920L (2008) https://doi.org/10.1117/12.798777

KEYWORDS: Metrology, Manufacturing, Statistical modeling, Statistical analysis, Critical dimension metrology, Etching, Data processing, Chromium, Data modeling, Photoresist processing

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The Critical dimension off-target (CDO) is a key parameter for mask house customer, affecting directly the performance of the mask. The CDO is the difference between the feature size target and the measured feature size. The change of CD during the process is either compensated within the process or by data correction. These compensation methods are commonly called process bias and data bias, respectively. The difference between data bias and process bias in manufacturing results in systematic CDO error, however, this systematic error does not take into account the instability of the process bias. This instability is a result of minor variations - instabilities of manufacturing processes and changes in materials and/or logistics. Using several masks the CDO of the manufacturing line can be estimated. For systematic investigation of the unit process contribution to CDO and analysis of the factors influencing the CDO contributors, a solid understanding of each unit process and huge number of masks is necessary. Rough identification of contributing processes and splitting of the final CDO variation between processes can be done with approx. 50 masks with identical design, material and process. Such amount of data allows us to identify the main contributors and estimate the effect of them by means of Analysis of variance (ANOVA) combined with multivariate analysis. The analysis does not provide information about the root cause of the variation within the particular unit process, however, it provides a good estimate of the impact of the process on the stability of the manufacturing line. Additionally this analysis can be used to identify possible interaction between processes, which cannot be investigated if only single processes are considered. Goal of this work is to evaluate limits for CDO budgeting models given by the precision and the number of measurements as well as partitioning the variation within the manufacturing process. The CDO variation splits according to the suggested model into contributions from particular processes or process groups. Last but not least the power of this method to determine the absolute strength of each parameter will be demonstrated. Identification of the root cause of this variation within the unit process itself is not scope of this work.

Proceedings Article | 20 May 2006 Paper

Metrology limits of mask process development

Pavel Nesladek, Andreas Wiswesser, Björn Sass, Jan Richter

Proceedings Volume 6283, 62832G (2006) https://doi.org/10.1117/12.681790

KEYWORDS: Error analysis, Metrology, Statistical analysis, Statistical modeling, Etching, Data modeling, Diffractive optical elements, Scanning electron microscopy, Critical dimension metrology, Process modeling

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Proceedings Article | 4 November 2005 Paper

Approaching zero etch bias at Cr etch process

Pavel Nesladek, Norbert Falk, Andreas Wiswesser, Renee Koch, Björn Sass

Proceedings Volume 5992, 59920N (2005) https://doi.org/10.1117/12.631718

KEYWORDS: Etching, Chromium, Galactic astronomy, Critical dimension metrology, Scanning electron microscopy, Photomasks, Photoresist processing, SRAF, Atomic force microscopy, Lithography

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Showing 5 of 6 publications

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