We proposed a dual-wavelength (DW) DFB semiconductor laser with an integrated grating reflector (GR). The proposed laser is based on the reconstruction-equivalent-chirp technique which can be realized easily with high precision. The GR section can provide reflection for the DW-DFB laser. Utilizing the proposed method, higher output power, lower threshold current and larger sidemode suppression ratio (SMSR) can be achieved.
Dual-wavelength semiconductor lasers have various potential applications in microwave photonics and laser radars fields. Monolithic integrated dual-wavelength DFB laser with equivalent-chirp sampled grating is proposed and investigated theoretically in this paper. The grating of the dual-wavelength DFB laser is designed by the reconstruction-equivalentchirp technique. The effects of the grating with different phase-shifts and different chirp ratios on the characteristics of the dual-wavelength DFB laser are theoretically demonstrated. The results proposed in this paper have great reference value for fabricating dual-wavelength semiconductor lasers.
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