Since the rapid development of semiconductor industry, the key nodes keep shrinking and defect detection played a vital role in produce yield improvement. The dark filed detection method has been widely used for un-patterned wafer. In this paper, a model is built for calculating and analyzing the scattering field of particles as defect, based on which the measured configuration is optimized, including the incident angle, polarization and scattering collection channels. Simulation shows the measurement accuracy and precision are improved after the measured configuration optimization, and may provide a reference for further defect detection.
Wafer surface defect detection plays an important role in product yield improvement. Particles are the main source in the majority of defects on wafer. We calculate and analyze the scattering field around the particles on the un-patterned wafer surface by light scattering method. A model was built to calculate an isolated particle based on Mie theory firstly, and another model was built to calculate particle scattering field on a smooth wafer surface based on Bidirectional Reflectance Distribution Function (BRDF). We simulated the scattering field with different parameters set: incidence angle, polarization state and scattering angle channel. The results verify the feasibility of our method to calculate the scattering field.
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