Recently, there has been an increased interest in germicidal ultraviolet (GUV) lamps for disinfection. Despite extensive studies on GUV LEDs, their efficiency and cost per Watt is still far from that of mercury lamps due to electrical injection issues, among others. Also, the fact that 254 nm radiation is highly carcinogenic and cataractogenic, has motivated research on radiation with shorter penetration (200-230 nm) depth, for non-invasive disinfection.
In this study, we propose electron pumped UV lamps as an alternative to LEDs (to tackle electrical issues) in the spectral range 230-330 targeting both wavelength ranges of disinfection and exhibiting IQE ranging from 20%-50%.
There is a soaring demand for UV lamps emitting at 220-270 nm for applications in disinfection. These needs are currently met by mercury lamps, hazardous for heath and the environment. Despite intense studies on UV LEDs, their efficiency remains limited by problems related to electrical injection. Here, we propose electron pumped UV lamps as an alternative to LEDs in this spectral range. For this purpose, superlattices of close-packed self-assembled AlGaN quantum dots are particularly promising, due to their high internal quantum efficiency (around 50%) and promising external quantum efficiency (4% in as-grown material, increasing to 7% by dice polishing).
Here we report X- and gamma-ray scintillation properties from solution-processable perovskite (SPP) halide single crystals and quantum dots. We tune the properties of single crystals by replacing the cation, changing the organic ammonium cation spacer, and varying the halide anion. For quantum dots, we tune the properties by changing the halide ion composition while we also try to replace the lead with the bismuth. Finally, we summarize the advantages and disadvantages of SPP single crystals and quantum dots to pave the way the research for the new high light yield scintillators.
Due to the large exciton binding energy, two-dimensional perovskite has demonstrated the potential as high-performance while low-cost scintillator. In our experiment, first we systemically investigate the effect of Li-ion dopant in phenethylammonium lead bromide, (PEA)2PbBr4 perovskite crystals under soft X-ray radiation of 15 keV. Successful inclusion of Li at four doping concentrations was confirmed by X-ray photoelectron spectroscopy. Li doping causes no substantial change in the crystal structure judging from the X-ray diffraction pattern but induces stronger emission tail as observed in the temperature-dependent X-ray luminescence (XL). Upon higher Li concentration, the emissions become broader due to possible Li trap emission as indicated by increasing traps induced by more Li in the X-ray thermoluminescence spectra. The behavior of negative thermal quenching is found in the XL and it can yield a benefit such as the possible light yield improvement in the X-ray imaging application. After the soft X-ray characterizations, we further explore our crystals in gamma-ray detection. In the gamma-ray pulse height measurement, relatively broad peaks can be resolved with the light yield of about 10,000 photons/MeV at 662 keV. The result from alpha particle pulse height measurement also indicates that we could even utilize our crystals in alpha particle detection at 5.8 MeV. Based on this feature and Li-ion capability as dopants, our crystals promise a good performance in thermal neutron detection. Finally, we can realize a versatile radiation detector that works in broad range of energy from soft to high energy radiation.
Fast scintillators are necessary for electron microscopes, as well as in many other application fields like medical diagnostics and therapy and fundamental science. InGaN/GaN multiple quantum well structures (QW) are perspective candidates due to strong exciton binding energy, high quantum efficiency, short decay time in order of ns and good radiation resistance. The aim of our work is to prepare scintillator structure with fast luminescence response and high intensity of light.
InGaN/GaN multiple QW structures described here were prepared by metal-organic vapour phase epitaxy and characterized by high resolution X-ray diffraction measurements. We demonstrate structure suitability for scintillator application including a unique measurement of wavelength-resolved scintillation response under nanosecond pulse soft X-ray source in extended dynamical and time scales. The photo-, radio- and cathodo-luminescence (PL, RL, CL) were measured. We observed double peak luminescence governed by different recombination mechanisms: i) exciton in QW and ii) related to defects. We have shown that for obtaining fast and intensive luminescence response proper structure design is required. The radioluminescence decay time of QW exciton maximum decreased 4 times from 16 ns to 4 ns when the QW thickness was decreased from 2.4 nm to 2 nm. We have proved suitability of InGaN/GaN structures for fast scintillator application for electron or other particle radiation detection. For x-ray detection the fast scintillation response would be hard to achieve due to the dominant slow defect luminescence maximum.
In this paper we examine how optical techniques can be used for impurities and defects detection in KH2PO4 (KDP)
components. This is important in so far as some of these defects are responsible for a weaker than expected laser-induced
threshold in these materials. Photothermal deflection, polariscopy, fluorescence and photoexcitation are
investigated with the aim of localizing and identifying the laser-induced damage precursors. Impurities concentration
is measured directly by ICP-AES and Fe is accordingly checked to be at the origin of a higher absorption in the
prismatic sectors of rapidly grown KDP crystals. We also exhibit a fluorescence signal in the near-ultraviolet range
by pumping at 248 nm; in rapidly grown crystals, in the same way as iron, the incorporation rate of the fluorescent
centers is shown to depend on the growth sector.
Optical transmission and scintillation light yields were measured in Ce3+-doped LuAlO3 and (LuY)AlO3 solid solution single crystals grown by the vertical Bridgman and Czochralski processes. Depending on the growth history, the crystals exhibit dissimilar transmission properties in the UV range. The as-grown color centers possibly responsible for poor transmission properties in the range of Ce3+ emission were characterized by exposing non-activated crystals to 1 Mrad of 60Co gamma-rays. Radiation induced absorption in Ce3+-doped crystals is found to be higher in crystals with good initial transmission properties, while the crystals with high density of as-grown color centers are radiation hard. With time, partial slow-rate natural recovery from the damage was observed at room temperature in all studied crystals. Annealing at higher temperatures or optical bleaching contribute to recombination of gamma-ray induced color centers but affect inconsiderably the as-grown color centers.
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