Dr. Daisuke Iida Profile

Dr. Daisuke Iida

at King Abdullah Univ of Science and Technology

SPIE Involvement:

Author

Publications (16)

Proceedings Article | 13 March 2024 Presentation

Highly efficient InGaN-based red LEDs for AR and VR applications

Kazuhiro Ohkawa, Pavel Kirilenko, Daisuke Iida

Proceedings Volume PC12906, PC129060O (2024) https://doi.org/10.1117/12.3001357

KEYWORDS: Light emitting diodes, Indium gallium nitride, RGB color model, Quantum wells, External quantum efficiency, Mixtures, Light sources, Electroluminescence, Crystals, Color

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Proceedings Article | 9 March 2024 Presentation

Strain-compensated InGaN red LEDs grown by micro-flow-channel MOVPE

Kazuhiro Ohkawa, Martin Velazquez-Rizo, Mohammed Najmi, Daisuke Iida

Proceedings Volume PC12886, PC1288614 (2024) https://doi.org/10.1117/12.3001451

KEYWORDS: Indium gallium nitride, Light emitting diodes, RGB color model, Quantum wells, Quantum light, Quantum information, Luminescence, Crystals, Barrier layers, Aluminum gallium nitride

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Proceedings Article | 8 March 2024 Presentation + Paper

InGaN-based Micro-LEDs: enhancing efficiency and speed for next-generation visible light communication applications

Wei-Ta Huang, Tzu-Yi Lee, Fu-He Hsiao, Wen-Chien Miao, Daisuke Iida, Kuo-Bin Hong, Chien-Chung Lin, Fang-Chung Chen, Shu-Wei Chang, Ray-Hua Horng, Yu-Heng Hong, Yao-Wei Huang, Kazuhiro Ohkawa, Hao-Chung Kuo

Proceedings Volume 12886, 1288606 (2024) https://doi.org/10.1117/12.3000782

KEYWORDS: Visible light communication, Light emitting diodes, Quantum wells, External quantum efficiency, Indium gallium nitride, Atomic layer deposition, Quantum efficiency

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Proceedings Article | 21 March 2023 Presentation

Strain-compensated InGaN quantum-well red standard/micro-LEDs

Kazuhiro Ohkawa, Pavel Kirilenko, Mohammed Najmi, Martin Velazquez-Rizo, Zhe Zhuang, Daisuke Iida

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2647004

KEYWORDS: Indium gallium nitride, Light emitting diodes, Hydrogen, Quantum wells

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Proceedings Article | 9 March 2022 Presentation

InGaN-based RGB micro-LED arrays

Kazuhiro Ohkawa, Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo

Proceedings Volume PC12022, PC1202202 (2022) https://doi.org/10.1117/12.2608199

KEYWORDS: RGB color model, Light emitting diodes, Transmission electron microscopy, Sputter deposition, Semiconducting wafers, Indium gallium nitride, Green light emitting diodes, External quantum efficiency, Epitaxy, CIE 1931 color space

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Proceedings Article | 7 March 2022 Poster

High-brightness InGaN-based red microLEDs exceeding 1 mW/mm2

Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa

Proceedings Volume PC12022, PC1202213 (2022) https://doi.org/10.1117/12.2609794

KEYWORDS: Light emitting diodes, Indium gallium nitride, RGB color model, Quantum wells, External quantum efficiency, Gallium nitride, Crystals, CIE 1931 color space, Aluminum nitride

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Proceedings Article | 5 March 2022 Poster

The performance of InGaN-based red/green micro-LEDs

Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa

Proceedings Volume PC12001, PC120011J (2022) https://doi.org/10.1117/12.2610287

KEYWORDS: Green light emitting diodes, External quantum efficiency, Semiconducting wafers, Light emitting diodes, Indium gallium nitride, Quantum wells, Patterned sapphire substrate, Gallium nitride, Crystals, CIE 1931 color space

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Proceedings Article | 5 March 2022 Presentation

Demonstration of 606nm-wavelength InGaN-based amber micro-LEDs toward red emission

Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa

Proceedings Volume PC12001, PC1200113 (2022) https://doi.org/10.1117/12.2610278

KEYWORDS: Light emitting diodes, Indium gallium nitride, Quantum wells, Temperature metrology, Semiconducting wafers, RGB color model, Patterned sapphire substrate, Light sources and illumination, Gallium nitride, External quantum efficiency

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Proceedings Article | 5 March 2022 Presentation

MOVPE-grown InGaN quantum-well red micro-LEDs

Kazuhiro Ohkawa, Daisuke Iida, Zhe Zhuang

Proceedings Volume PC12001, PC120010X (2022) https://doi.org/10.1117/12.2607886

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Proceedings Article | 6 March 2021 Poster + Presentation

Effects of size on the electrical and optical properties of InGaN-based red light-emitting diodes

Zhe Zhuang, Daisuke Iida, Kazuhiro Ohkawa

Proceedings Volume 11686, 116862H (2021) https://doi.org/10.1117/12.2577244

KEYWORDS: Light emitting diodes, Optical properties, External quantum efficiency, Light sources and illumination, Electroluminescence, Tolerancing, Semiconducting wafers, Blue light emitting diodes

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Proceedings Article | 6 March 2021 Poster + Presentation

665-nm-wavelength InGaN-based red LEDs with low forward voltage operation

D. Iida, Z. Zhuang, P. Kirilenko, M. Velazquez-Rizo, M. Najmi, K. Ohkawa

Proceedings Volume 11686, 116862F (2021) https://doi.org/10.1117/12.2577029

KEYWORDS: Light emitting diodes, Indium gallium nitride, External quantum efficiency, Electroluminescence, Crystals, Vapor phase epitaxy, Superlattices, RGB color model, Quantum wells, Lutetium

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Proceedings Article | 6 March 2021 Poster + Presentation

Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes

Zhe Zhuang, Daisuke Iida, Pavel Kirilenko, Martin Velazquez-Rizo, Kazuhiro Ohkawa

Proceedings Volume 11686, 116862G (2021) https://doi.org/10.1117/12.2577238

KEYWORDS: Light emitting diodes, Transmittance, Sputter deposition, Oxygen, Electroluminescence, Tin, Solid state lighting, Oxides, Indium, Deposition processes

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Proceedings Article | 5 March 2021 Presentation + Paper

Analysis of LO phonon properties in III-nitrides: interaction with carriers and microscopic analysis

Y. Ishitani, K. Oki, M. Chizaki, S. Okamoto, T. Nakayama, B. Lin, B. Ma, K. Morita, H. Miyake, D. Iida, K. Ohkawa

Proceedings Volume 11686, 116861Y (2021) https://doi.org/10.1117/12.2576776

KEYWORDS: Phonons, Excitons, Raman spectroscopy, Ultraviolet radiation, Thin films, Process control, Plasmons, Laser irradiation, Laser development

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Proceedings Article | 5 March 2021 Presentation

The efficiency enhancement of InGaN-based red LEDs with thick GaN underlying layers

Daisuke Iida, Zhe Zhuang, Pavel Kirilenko, Martin Velazquez-Rizo, Mohammed Najmi, Kazuhiro Ohkawa

Proceedings Volume 11686, 1168618 (2021) https://doi.org/10.1117/12.2577028

KEYWORDS: Light emitting diodes, Gallium nitride, Indium gallium nitride, Quantum wells, Electroluminescence, RGB color model, Patterned sapphire substrate, Lutetium, Crystals, Atomic force microscopy

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Proceedings Article | 12 February 2010 Paper

Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN

Hiroshi Amano, Kensuke Nagata, Kentaro Nagamatsu, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki

Proceedings Volume 7617, 761702 (2010) https://doi.org/10.1117/12.848616

KEYWORDS: Switching, Focus stacking software, Vapor phase epitaxy, Light emitting diodes, Thermodynamics, Solids, External quantum efficiency, Epitaxy, Gallium nitride, Blue light emitting diodes

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Proceedings Article | 6 February 2007 Paper

Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs

T. Kawashima, T. Nagai, D. Iida, A. Miura, Y. Okadome, Y. Tsuchiya, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Proceedings Volume 6468, 64680S (2007) https://doi.org/10.1117/12.717182

KEYWORDS: Gallium nitride, Light emitting diodes, Sapphire, Epitaxial lateral overgrowth, Silicon carbide, Aluminum nitride, Scanning electron microscopy, Transmission electron microscopy, Fabrication, Surface roughness

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Showing 5 of 16 publications

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