Recently, fluorescent point defects in silicon have been explored as promising candidates for single photon sources, which may pave the way towards the integration of quantum photonic devices with existing silicon-based electronic platforms. However, the current processes for creating such defects are complex, and commonly require one or two implantation steps. In this work, we have demonstrated implantation-free methods for obtaining G and W-centers in commercial silicon-on-insulator substrates using femtosecond laser annealing. We also demonstrate an enhancement of the color centers’ optical properties by coupling them with photonic structures. For example, we have shown an improvement in emission directivity for G centers by embedding them into silicon Mie resonators fabricated by dewetting, achieving an extraction efficiency exceeding 60% with standard numerical apertures. We will also address the control of emission polarization by embedding color centers in photonic crystals.
We demonstrate how the implementation of an axicon-lens doublet can lead to an efficient beam-shaping solution for laser processing of semiconductors. By generating high-angle pseudo-Bessel beams with 50-ps 1550-nm pulses, we can write high-aspect-ratio structures inside silicon and approach results similar to those today demonstrated in dielectrics. For the first time, we show how repeated laser irradiations with our shaped beam lead to permanent modifications that spontaneously grow shot-after-shot from the front to the rear surface of 1-mm thick crystalline wafers. Although direct microexplosion and drilling remain inaccessible, our work evidences a novel self-induced percussion writing modality leading to the formation of uniform and reproducible elongated modifications with aspect ratios as high as ∼700, obtained without any relative motion of the beam focus. Quantitative phaseimaging reveals light-guiding characteristics associated to these structures, according to a measured high positive index change exceeding ∼10−2. This opens the door to unique monolithic solutions for optical through-siliconvias, which could be potentially a key element for ultrafast vertical interconnections in next-generation silicon chips.
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