We report recent developments in Bragg soliton dynamics on an ultra-silicon-rich nitride chip, including gap soliton-based tunable slow light and pure quartic Bragg solitons.
The top cladding is an important factor when designing photonic devices. It has implications on waveguide properties such as mode guidance and optical loss. Silicon dioxide (SiO2) is a commonly used cladding material for photonic devices as it has low optical loss and also enables a large refractive index contrast between the waveguide core and cladding. We performed an investigation into the material properties of SiO2 thin films deposited by different methods, namely, plasma-enhanced chemical vapor deposition (PECVD) undoped silicate glass (USG), high density plasma (HDP), PECVD tetraethyl orthosilicate (TEOS), and low pressure chemical vapor deposition (LPCVD) TEOS. Material properties including refractive index, surface roughness, absorption, and film stress were characterized for the different SiO2 cladding samples. Our results show that the surface roughness of HDP films was around 55 times better than that of USG films. In terms of film stress however, USG films had the lowest, whereas PECVD TEOS films were found to have the highest film stress, more than twice of that of the USG films. These findings indicate that when deciding on a particular deposition method for the SiO2 cladding, besides considerations of thermal budget and device application, an equally important compromise needs to be made to give a balance among the various material properties.
In this paper we demonstrate the development and optimization of an 800 nm-thick Plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) photonic platform on a 300-mm silicon wafer. The implementation of ArF immersion lithography contributes to superior manufacturing processes, as it provides excellent critical dimension (CD) uniformity inter- and intra-wafers, make it an optimal platform of production of integrated circuits and nanoscale devices.
Silicon-rich nitride (SRN) devices provide higher optical nonlinearity than stoichiometric silicon nitride. Their growth using CMOS-compatible chemical vapor deposition allows their composition to be tunable. Conventional SRN typically utilizes silane gas which introduces absorption overtones at the 1.55μm wavelength region. As is also the case with stoichiometric silicon nitride, high temperature annealing can be used to reduce Si-H based absorption. An alternate approach towards eliminating Si-H absorption is by replacing silane gas with deuterated silane. The substitution of Si-H with Si-D induces a blue shift in the wavenumber of the bond absorption, thus removing the absorption overtone at the telecommunications region. Consequently, deuterated SRN provides lower material losses compared to non-deuterated SRN, while providing a design degree of freedom for tailoring its linear and nonlinear refractive indices. We present the material properties for deuterated SRN and its application towards linear and nonlinear photonic devices. We demonstrate improved device losses when deuterated SRN is used compared to non-deuterated SRN. We further quantify the optical properties and nonlinearity of grown films and demonstrate low power parametric wavelength conversion in deuterated SRN ring resonators.
On-chip spectrometer operating in the mid-infrared (MIR) regime (λ = 2 – 14 μm) enables the miniaturization of a chemical sensing platform that identifies compounds based on their unique molecular fingerprints. Germanium-on-Silicon (Ge-on- Si) material system is a suitable candidate for its transparency in the MIR spectrum and compatibility with silicon processing. As chemical sensing is conducted by having the mode evanescent field interacting with the analyte, the design of Ge-on-Si waveguide for a compact footprint (small bending radius) and large evanescent field coverage is necessary. However, the bending radius of the Ge-on-Si waveguide is limited to hundreds of micrometers due to the low refractive index contrast between germanium and silicon. In this work, we demonstrate a 3 μm thick Ge-on-Si waveguide, with ~89° sidewall angles and a high gap aspect ratio of 10 (resolvable gaps of 300 nm). Different types of Ge-on-Si devices are fabricated including in-plane distributed Bragg grating (DBR) structures, cascaded Fabry-Perot resonators, and polarization splitters. We show that over-etching the Si lower cladding is able to reduce bending loss by ~10x, allowing us to decrease the bending radius to ~50 μm. Designs of 32 waveguide geometries for single mode propagation from 5.5 μm to 11 μm are presented, each of which is integrated with grating couplers operating at specific peak wavelengths. Our measurements show high consistency between the simulated and measured peak wavelengths of the grating couplers, with an inter-chip standard deviation of σλ ⁄ λpeak <1%
Aluminum nitride (AlN) is a promising photonics material contributed by its wide transparency window and remarkable nonlinear optical property. Moreover, its nonlinear effect can be further enhanced by doping Scandium (Sc). Such nonlinear optical property brings potential for high efficiency in nonlinear optical generation processes, such as 2nd harmonic generation and frequency comb generation. Although the nonlinear optical property of Sc-doped AlN looks promising, its waveguide is facing challenge on loss reduction. In this work, we report Sc-doped AlN photonic integrated circuit with reduced waveguide loss of 6 dB/cm around 1550 nm. The waveguide has Sc doping concentration of 10%. Its etching process is tailored through a design of experiment (DoE) approach to achieve smooth surface. An annealing process is also applied to patterned waveguide for optical loss reduction. A loaded Q of 1.41×104 has also been reported from microring resonator on the same wafer. The reported result paves the way towards low-loss Sc-doped AlN for photonic integrated circuits.
SF6 gas sensor is developed to measure SF6 gas at different concentrations mixed with N2 based on mid-IR absorption of SF6 at a wavelength of ~10.6 μm. An optical bandpass filter of ~10.6 μm is put in front of a thermal emitter source to allow light of this wavelength to pass through. A CMOS compatible pyroelectric detector is put on the other end of the gas channel to measure the voltage change due to presence of SF6 gas. Here, we use AlN-based and 12% ScAlN-based pyroelectric detectors respectively. The results show for 100% SF6 gas sensing, 12% ScAlN-based pyroelectric detector gives ~73% higher response compared to when using AlN-based pyroelectric detector. The voltage drop between reference N2 gas and different SF6 gas concentrations is also higher (up to 2x) when using 12% ScAlN-based pyroelectric detector. Based on the measured SF6 gas responses, we try to estimate the lower limit of detection of our gas sensors when using AlN- and ScAlN- based pyroelectric detectors respectively. Response times taken for both detectors to detect SF6 concentrations are measured to be ~6.26 s for AlN-based pyroelectric detector and ~1.99 s for 12% ScAlNbased pyroelectric detector. Finally, both pyroelectric detectors’ electrical responses across different frequencies are measured and their 3-dB frequency cutoffs are extracted to be ~13.5 Hz and ~12.6 Hz for AlN- and 12% ScAlN- based pyroelectric detector respectively. The results provide more understanding on characteristics of pyroelectric detectors in SF6 greenhouse gas sensing based on mid-IR absorption.
We develop H2 gas sensors based on CMOS compatible 20% ScAlN-based pyroelectric detectors fabricated in-house. Leveraging on the high thermal conductivity of H2, ScAlN-based pyroelectric detector is used in the H2 sensor for H2 to conduct away thermal energy received by the detector, resulting in a drop in signal received by the detector, thereby leading to different voltage signals measured for different H2 gas concentrations. The higher the H2 gas concentration, the lower the voltage measured as more thermal energy is conducted away from the detector. We successfully demonstrate H2 gas sensing with the signal received by the pyroelectric detector at concentration ranging from 400 ppm to 1% H2 concentration. The gases are cycled at 2-minute intervals between different concentrations of H2, using N2 as the reference gas. Our measurements show H2 sensing down to 400 ppm gas concentration with response time ranging from ~3-7 s. In addition, a linear relationship is also observed between the measured output signal from the H2 gas sensor and the H2 gas concentration flowing across the pyroelectric detector. The results show promise in using CMOS compatible 20% ScAlN-based pyroelectric detectors for development of thermal conductivity H2 gas sensor in H2 leakage sensing to increase confidence towards adoption of H2 as a clean energy as we move towards a sustainable society.
We demonstrate a system-level low-power contactless button using MEMS ScAlN-based pyroelectric detector. As pyroelectric detectors can sense instantaneous temperature change, the human finger can act as a thermal source to activate the button. Using our in-house fabricated ScAlN-based pyroelectric detector which does not require any IR source, we package it into a contactless button system designed with electrical read-out circuits and signal processing. This contactless button system could detect the presence of a finger at a center distance measured up to ~4 cm away, ~2 cm radius circle area, suitable for application as contactless elevator button. Our contactless button system using ScAlN-based pyroelectric effect is characterized, tested and compared with a commercial contactless button. The power consumed is measured ~3.5× lower than that of commercial contactless button. The results obtained provide a potential solution towards energy efficient low-power contactless button system.
A demonstration of an on-chip CO2 gas sensor is reported. It is constructed by the integration of a MEMS-based thermal emitter, a scandium-doped aluminum nitride (ScAlN) based pyroelectric detector, and a sensing channel built on Si substrate. The integrated sensor has a small footprint of 13mm × 3mm (L×W), achieved by the replacement of bulky bench-top mid-IR source and detectors with MEMS-based thermal emitter and ScAlN-based pyroelectric detector, with their footprints occupying 3.15 mm × 3 mm and 3.45 mm × 3 mm, respectively. In addition, the performance of the integrated sensor in detecting CO2 of various concentrations in N2 ambient is also studied. The results indicate that the pyroelectric detector responds linearly to the CO2 concentration. The integration of MEMS emitter, thermal pathway substrate, and pyroelectric detector, realized through CMOS compatible process, shows the potential for massdeployment of gas sensors in environmental sensing networks.
Main complementary metal-oxide-semiconductor (CMOS)-compatible photonics platforms, i.e., silicon and silicon nitride, rely on Kerr nonlinearities for near-instantaneous modulation of optical signals. Kerr nonlinearities emerge due to the third-order susceptibility (χ(3)) and lead to several nonlinear optical processes, including the four-wave mixing (FWM). FWM is the underlying process of many applications, such as parametric amplification, optical sampling, all-optical wavelength conversion, and demultiplexing and therefore has an indispensable role in optical signal processing. The full potential of on-chip nonlinear processes can be efficiently unlocked by tuning the light-matter interactions at a greater extent via manipulating both material and structural properties of integrated photonic devices. We employ photonic crystal waveguides (PhCWgs) to engineer the structural properties of a waveguide by introducing two-dimensional periodicity in the plane of light propagation. In addition to structural engineering, the chosen material platform aims to bypass the limitations of existing CMOS-compatible platforms: the compositionally engineered ultra-silicon-rich nitride (USRN : Si7N3), eliminates two-photon absorption at 1.55 μm and possesses an order of magnitude higher Kerr nonlinearity compared to stoichiometric silicon nitride at telecommunication wavelengths. Here, we present four-wave mixing in a USRN-based, CMOS-compatible, PhCWg leading to on/off optical parametric signal gain reaching 3 dB, and a large instantaneous idler conversion efficiency of −1 dB experimentally. Enhancement of the Kerr nonlinearity in the presence of a sizable and near-constant group index allows us to demonstrate a large on/off gain per unit length of 333 dB/cm on an ultra-compact, 97 μm-long PhCWg.
We present the optical and electrical properties of AlN-based and 12% doped ScAlN-based pyroelectric detectors fabricated on 8-inch wafers respectively. Both AlN and ScAlN materials are deposited at a temperature of ~200oC, making them potential candidates for CMOS compatible MEMS pyroelectric detectors. FTIR spectroscopy is used to measure the absorption of these pyroelectric detectors over the wavelength range of ~2–14 μm and the results show absorption improvement up to ~75% for ScAlN-based pyroelectric detectors compared to that of AlN-based pyroelectric detectors at the wavelength of 4.26 μm where CO2 gas absorption of IR radiation is anticipated. Higher output current (~3-fold increase) is also observed from ScAlN-based pyroelectric detectors. Other than pyroelectric coefficient that contributes to improved performance for ScAlN-based pyroelectric detectors, we believe that absorptivity of the device also plays a major role in the performance of pyroelectric IR detectors. The results obtained from the study of the electrical and optical properties of AlN-based and ScAlN-based CMOS compatible MEMS pyroelectric detectors will bring forth potential applications of these detectors onto multi-functional integrable and monolithic platforms.
We present an improved CMOS-compatible USRN material prepared using DCS-based chemistry deposited at a low temperature of ~300°C. Morphology and composition of these USRN films are characterized using SEM, TEM, EDS and AFM. Surface profilometer is also used to estimate the film stress over an 8-inch wafer. TEM shows that the USRN film is amorphous and AFM measures a low roughness RMS of ~0.4 nm over a scan window of 3 μm x 3 μm. Optical properties of these USRN films are studied using variable-angle spectroscopic ellipsometry and FTIR spectroscopy. A prism coupler is used to estimate the film propagation loss. Ellipsometry measurement shows refractive index of around 3.09 at 1550 nm wavelength, which is our wavelength of interest. Comparing with USRN films prepared using SiH4- based chemistry, FTIR characterization shows reduced absorbance for films prepared using DCS-based chemistry at wavenumber region where Si-H bonds are located. The absorbance caused by N-H bonds are comparable for USRN films prepared using both DCS-based and SiH4-based chemistries. Si-H bonds and N-H bonds are expected to be the main sources of material absorption near 1550 nm in the USRN material. Characterization results of waveguides fabricated using USRN deposited by this DCS-based chemistry shows propagation loss of ~4.9 dB/cm for waveguide width of 1.5 μm at 1550 nm wavelength. The improved results of DCS-based USRN will help to further cut losses and therefore enhance the performance of CMOS compatible USRN devices in nonlinear signal processing.
Integrated photonic nanostructures provide powerful degrees of design freedom for the engineering of light confinement and advanced lightwave manipulation functions. The ability to tailor field profiles in these on-chip devices allows enhanced light-matter interaction, strong modal confinement and the ability to engineer dispersion. Here, we present recent developments in photonic integrated circuits towards the generation of solitons, amplification, and optical waveform manipulation. By harnessing CMOS platforms with a high nonlinear figure of merit, the existence of on-chip Bragg solitons, Bragg soliton fission and solitons in photonic waveguides are experimentally observed. These demonstrations are made possible by 1,000X larger dispersion close to the band edge in on-chip Bragg gratings, an effect that arises from the interaction of forward and backward propagating fields. In addition, efficient parametric processes facilitate wavelength conversion of light and high gain amplification of signals. These efficient nonlinear mechanisms provide a possible pathway in which to realize new approaches to efficiently manipulate optical waveforms.
The appeal of on-chip broadband supercontinuum generation (SCG) comes from its potential to pave the way to full integration of various ultrafast optics applications in frequency metrology, wavelength division multiplexing, and sensing. However, the generation of octave-spanning supercontinuum requires either the use of exceedingly short femtosecond pulses or large footprints. One promising method to achieve broadband supercontinuum is to exploit the high-order soliton fission. Bragg solitons leverage the large anomalous dispersion at the photonic band edge of nonlinear Bragg gratings, therefore they can facilitate high-order soliton fission in much shorter waveguide lengths and significantly lower powers. Soliton dynamics, especially fission, on CMOS-compatible platforms have been limited due to the nonlinear losses such as two-photon absorption and free carrier effects in silicon or low optical nonlinearities in traditional silicon nitride. We use compositionally engineered ultra-silicon-rich nitride (USRN) that possesses a large Kerr nonlinearity in the absence of two-photon absorption. Utilizing ideal nonlinear properties of USRN platform in conjunction with our monolithically integrated cascaded grating-waveguide design, we experimentally demonstrate × 4 spectral broadening enhancement, from 79 nm in the 7 mm long reference waveguide to 311 nm at the cascaded Bragg grating and waveguide device of the same footprint, using input pulses of 1.68 ps FWHM. This result is promising for generating wide supercontinuum, without the need to use sub-picosecond pulses or increasing the device footprint, by exploiting the high-order soliton dynamics availed through the simple photonic chip design consisting of a nonlinear Bragg grating and nonlinear waveguide.
Correlated single photons provide a means to drive applications such as quantum computing and quantum communications. Correlated single photons can be generated via parametric down conversion in second–order nonlinear media or spontaneous four–wave mixing in third–order nonlinear media. In particular, complementary metal–oxide–semiconductor (CMOS) technology allows for seamless integration with electronics, providing the potential for a completely on-chip solution for quantum information processing. Ultra–silicon–rich nitride platform is a backend CMOS compatible platform, that has already been used to obtain high gain optical parametric amplification, wideband supercontinuum and enhanced nonlinearity in photonic crystal waveguides due to its large nonlinearity. In this work, we demonstrate correlated photon pair generation based on spontaneous four–wave mixing using ultra-silicon-rich nitride waveguides for the application in CMOS–based optical quantum technologies.
A CW pump at a wavelength of 1555.747nm amplified using an EDFA is filtered through five wavelength division multiplexers (WDM) with a bandwidth of 1.2nm, providing 175dB suppression of EDFA induced pump sideband noise. The filtered quasi–TE pump, adjusted using a fiber polarization controller, is coupled into an ultra–silicon–rich nitride waveguide using a lensed fiber. A SiO2 cladded waveguide with a width of 550nm and height of 300nm possesses a high nonlinear parameter of 530W^-1/m with anomalous dispersion necessary for spontaneous four-wave mixing. The waveguide output is coupled into a lensed fiber and 7 cascaded WDMs are used to provide 245dB of residual pump filtration. The pump–suppressed output is spectrally separated into signal/idler part using WDMs. We refer to lower (higher) frequency photon as the signal (idler). The spontaneously generated signal and idler photons are filtered using cascaded tunable band pass filters (OTF) centered at 1571.24nm and cascaded WDMs centered at 1540.56nm, respectively. The bandwidth of the tunable OTF and WDM is 0.5nm and 1.2nm, therefore the correlated signal/idler photons are observed within the bandwidth window of 0.5nm induced by the OTF. The signal and idler photons are measured using InGaAs/InP avalanche photodetectors. The time correlation between signal and idler photons is obtained using a time interval analyzer with a detection efficiency of 20% and dead time of 15μs.The time bin is set to 81ps and the photon collection time is 240s. The coincidence peak is located ~11ns in the time–bin histogram due to the optical-path difference between the tunable OTF and WDM at respective signal and idler sides. The experimental raw coincidence counts (Hz), calculated by subtracting the accidental rate from the coincidence peak, show a quadratic increase with respect to coupled pump power. At the maximum coupled power of 5mW, the raw coincidence count is ~1Hz. We achieve a raw coincidence–to–accidental ratio (CAR) of up to 3. Therefore, we succeeded to observe correlated photon pair generation based on spontaneous four–wave mixing using the ultra–silicon–rich-nitride waveguide as a CMOS compatible platform, for future applications in quantum technologies.
Four–wave mixing (FWM) serves as the physical basis for various nonlinear phenomena including wavelength conversion, parametric amplification, and frequency combs. FWM on a chip has been implemented using CMOS platforms, chalcogenide glasses and III–V materials. On-chip, waveguide based stimulated FWM techniques have been mostly demonstrated using a coherent pump and coherent signal to focus on broadband spectral tuning for operation in high–speed and multi–channel wavelength division multiplexing network. Though FWM using incoherent light has the potential to provide large optical conversion efficiency, such demonstrations remain largely confined to fiber–experiments and involved narrow–band signals/idlers. Furthermore, the FWM based on a pulsed laser and a broadband incoherent source has yet to be implemented. In this work, we demonstrate integrated ultra–silicon–rich nitride parametric converters that perform wavelength conversion of a broadband incoherent source with a bandwidth of ~100nm at the -20dB level. A 500fs pulsed pump is combined with an incoherent superluminescent diode (SLD) as the signal and parametric gains between 12dB – 27dB is demonstrated as well as cascaded FWM. A 500fs pulsed laser centered at 1.555μm and an incoherent SLD with a 20dB bandwidth spanning from 1.6 – 1.7μm are used as the pump and signal respectively. The pump and signal are combined with a wavelength division multiplexer and coupled into an ultra–silicon–rich nitride waveguide with 10mm length, 700nm width and 400nm height. The waveguide is designed to have a larger nonlinear parameter of 330W^-1/m while possessing anomalous dispersion of -0.92ps^2/m, necessary for phase matched parametric conversion. At a coupled peak power of 4.6W, an idler spanning from 1.43 – 1.52μm at the -20dB level is generated. At a maximum input signal power of 0.71mW, a second idler appears at the blue side of the first generated idler because of cascaded FWM induced between pump of 1.555μm and the first idler peak of 1.48μm. At a coupled peak power of 2.8W, an idler spanning from 1.46 to 1.52μm is generated. The experimental idler bandwidth agrees well with the calculation based on degenerate FWM phase–matching condition. The broadened idler powers are calculated by integrating the energy of each signal and idler with respect to wavelength to obtain optical conversion efficiencies. The integrated idler power is 3.4dBm and 13.4dBm, corresponding to idler parametric gain of 12dB and 18dB respectively at a coupled peak power of 2.8 and 4.6W, respectively. The application of the SLD signal to a supercontinuum that is generated at a coupled peak power of 26W spectrally spanning 1.1 – 1.7μm is observed to generate an idler power of 14dBm within the wavelength range of 1.18 – 1.42μm as well as an idler conversion efficiency/gain of 27dB. Therefore, we achieved broadband wavelength conversion based on stimulated FWM using a pulsed pump and broadband incoherent signal that facilitate the spectrum spanning from 100nm, sufficient to cover parts of the E– and S–bands an representing large conversion efficiency and parametric gains of 12dB – 27dB.
Optical parametric amplifiers rely on the high Kerr nonlinearities and low two-photon absorption (TPA) to achieve large optical amplification. The high Kerr nonlinearity enables efficient energy transfer from the optical pump to the signal. On the other hand, the TPA process competes with the amplification process, and thus should be eliminated. Through Miller’s rule and Kramers-Kronig relations, it is known that the material’s Kerr nonlinearity scales inversely proportional to the band-gap, while the TPA process occurs when the photon energy is larger than the band-gap energy and Urbach tails, thus presenting a trade-off scenario. Based on these requirements, we have designed a CMOScompatible, band-gap engineered nitride platform with ultra-rich silicon content. The silicon nitride material is compositionally engineered to have a band-gap energy of 2.1 eV, which is low enough to confer a high Kerr nonlinearity, but still well above the energy required for the TPA process to occur. The new material, which we called ultra-silicon-rich nitride (USRN), has a material composition of Si7N3, a high Kerr nonlinearity of 2.8x10-13 cm2/W, and a negligible TPA coefficient. In optical amplification experiments, 500 fs pulses at 14 W peak power and centered around 1560 nm are combined with continuous wave signals. The maximum parametric gain of the signal could reach 42.5 dB, which is one of the largest gains demonstrated on CMOS platforms to date. Moreover, cascaded four-wave mixing down to the third idler, which was usually observed for mid-infrared silicon waveguides, is unprecedentedly observed at this spectrum.
We demonstrate electrically-pumped III-V quantum-well lasers bonded on SiO2 with a metal-coated etched-mirror. The metal-coated etched-mirror allow the lasers to be used as on-chip laser, but our process design make sure that it requires no additional fabrication step to fabricate the metal-coated etched mirror. The bonded III-V on SiO2 also permits tight laser mode confinement in the active region due to high index contrast between III-V and SiO2. Moreover, it promises a flexible choice of host substrate, in which the silicon substrate could also be replaced with other materials. The laser devices demonstrated have the lowest threshold of 50 mA, a maximum output power of 9 mW and a differential quantum efficiency of 27.6%.
We report a low-temperature (220°C) covalent bonding of InP-based epitaxy substrate to silicon substrate through a thin thermal oxide interlayer of around 20 nm. Our SiO2 interlayer is grown only on the silicon substrate, which avoids the challenge in obtaining high quality SiO2 film on III-V substrate. The 20 nm thin oxide is proved to be sufficient as the outgassing medium during the bonding process. It is found that the bonding has minimal effect on the transferred epitaxy layer. This is evident from the X-ray Diffraction and room temperature photoluminescence (PL) characterizations of the III-V sample before (as-grown) and after bonding, where no significant peak shifting or broadening is observed. The high resolution Transmission Electron Micrograph (HR-TEM) also reveals almost zero-defect atomic bonding between III-V and thermal oxide on silicon.
Broadband antireflection coatings are commonly required in many silicon or III-V compound semiconductor based optoelectronic devices such as solar cells, photodetectors, and image sensors so as to enhance light conversion efficiency. Conventional approach using a single-layer antireflection coating is simple and commonly used in industry but it has a limited working bandwidth. To achieve broadband or even omni-directional characteristics, structures using thick graded refractive index (GRIN) multilayers or nanostructured surfaces which have equivalent graded refractive index profile have been proposed and demonstrated. In this paper, we will show our development of broadband antireflection for high index substrate using SiNx/SiO2 via inductively coupled plasma chemical vapour deposition (ICPCVD). Global optimization of thin-film broadband antireflection coating using adaptive simulated annealing is presented. Unlike the conventional optical coating design which uses the refractive index of available materials, the optimization approach used here decides the optimal values of the refractive index as well as the thickness of each layer. The first thin-film material optimization is carried out on the ICP-CVD machine operating at low temperature of 250°C by tuning the SiH4/N2 gas ratio. The demonstrated double layer antireflection thin film reduces the average reflectance of Si surface from ~32% to ~3.17% at normal incidence for wavelength range from 400 to 1100 nm. This optical thin-film design and material development can be extended to optical wavelength filters and integrated micro-GRIN devices.
A new heterogeneously integrated III-V/Si laser structure is reported in this letter, which consists of a III-V
ridge waveguide gain section on silicon, III-V/Si optical vertical interconnect accesses (VIAs) and silicon-oninsulator
(SOI) nanophotonic waveguide sections. The III-V semiconductor layers are introduced on top of the 300
nm thick SOI layer through low temperature, plasma assisted direct wafer-bonding and etched to form III-V ridge
waveguide on silicon as the gain section. The optical VIA is formed by tapering the III-V and the beneath SOI in
the same direction with a length of 50 μm for efficient coupling of light down to the 600 nm wide silicon
nanophotonic waveguide or vice versa. Fabrication details and specification characterizations of this heterogeneous
III-V/Si Fabry–Pérot (FP) laser are given. The fabricated FP laser shows a continuous-wave lasing with a threshold
current of 65 mA at room temperature and the slope efficiency from single facet is 144 mW/A. The maximal single
facet emitting power is about 4.5 mW at a current of 100 mA and the side-mode suppression ratio is ~30 dB. This
new heterogeneously integrated III-V/Si laser structure demonstrated enables more complex laser configuration
with a sub-system on-chip for various applications.
Optically-pumped microsquare cavity laser on InP-based multiple-quantum-wells (MQW) material platform is demonstrated. Continuous wave operation is achieved for microsquare cavity with footprint as small as 4×4μm2. Numerical mode analysis and experimental characterization of the microsquare laser are conducted, and the results are compared with the commonly used microdisk cavity laser fabricated on the same platform. The microsquare laser shows a lower lasing threshold and infers a higher differential efficiency than the microdisk counterpart. The microsquare cavity laser has sufficiently high quality factor, and higher pumping injection efficiency due to the more evenly distributed field profile as compared to that of the microdisk. Experimental result also shows that the microsquare laser has better temperature stability than the microdisk. These results promise a potential alternative laser structure for onchip light source applications.
This paper presents an overview of graded refractive index optics based on dual-layer
ultrathin film technology and its application in integrated photonics as an on-chip lens for optical
coupling of nano-waveguide. The theoretical derivation and discussion shows the equivalence
between the dual-layer ultrathin film and a negative birefringent thin film and the influence of thin
film thickness and light incident angle on this equivalence. For experimental verification, a set of
dual-layer ultrathin films of titanium dioxide (TiO2) and aluminium oxide (Al2O3) are deposited on
silicon with different volume fractions. Characterization of refractive index and reflectance shows a
good agreement between the experiment and theoretical design, and suggests the graded refractive
index profile can be achieved via varying the volume faction of the dual-layer ultrathin film stack.
As an application example, a graded refractive index lens with aberration-correction based on the
above dual-layer thin film stack is designed and optimized for optical coupling between silicon
waveguide and optical fiber. The optical design indicates the multilayer thin-film stack with a proper
graded refractive index profile can serve as the passivation cladding on top of silicon waveguide but
collimate the light at the waveguide ends for optical coupling to fiber with an estimated efficiency
~89%.
As the basic building block for photonic device integration, silicon nanophotonic waveguide requires low-loss
propagation for high-performance ultra-compact photonic device. We experimentally study SiO2 grown by two different
methods (thermal oxidation and PECVD) as hard masks for Si nano-waveguides fabrication and study their effects on
propagation loss. It was found that the denser and smoother quality of thermally grown SiO2 will increase the etch
selectivity of Si and reduce the line-edge roughness transferred to the Si nanowaveguide sidewall, hence giving a lower
loss compared to having PECVD SiO2 hard mask. With thermally grown SiO2 as hard mask, the Si nano-waveguides
loss can have a loss reduction as high as 5.5 times for a 650 nm wide nanowaveguide. Using thermally grown SiO2 as
hard mask will allow the Si nano-waveguide to have as low a propagation loss as direct resist mask and enable III-V
semiconductor on silicon via bonding for multifunctional photonic system on chip.
Silicon nanophotonic platform based on a silicon-on-insulator substrate enables dense photonic integration due to transparency for light propagation and ultra-high refractive index contrast for light confinement. Here, we integrate silicon together with III-V for high-efficiency heterogeneous Silicon/III-V and short vertical optical interconnect access. The fabrication involves 3 critical processes: 1) obtaining more than 80% maximum bonded areas of Si with III-V, 2) precise alignment of III-V nano-devices on top of the passive devices and 3) vertical sidewall etch profile of Si and III-V devices. The measurement results show around 90% coupling efficiency. The realization of this heterogeneous Si/III-V integration platform will open up enormous opportunities for photonic system on silicon through integrating various devices.
This paper will review the top down technique of ICP etching for the formation of nanometer scale structures. The increased difficulties of nanoscale etching will be described. However it will be shown and discussed that inductively coupled plasma (ICP) technology is well able to cope with the higher end of the nanoscale: features from 100nm down to about 40nm are relatively easy with current ICP technology. It is the ability of ICP to operate at low pressure yet with high plasma density and low (controllable) DC bias that helps greatly compared to simple reactive ion etching (RIE) and, though continual feature size reduction is increasingly challenging, improvements to ICP technology as well as improvements in masking are enabling sub-10nm features to be reached. Nanoscale ICP etching results will be illustrated in a range of materials and technologies. Techniques to facilitate etching (such as the use of cryogenic temperatures) and techniques to improve the mask performance will be described and illustrated.
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