In this presentation, we delve into hBN’s potential as a host for photon emitters. In our recent publication, we introduced a method for creating defects in hBN with tailored spectral properties and spatial distributions using ion beam irradiation. We demonstrate that gallium ions efficiently produce emitters, with Raman spectroscopy identifying defect vibrational signatures. Spectral tuning over 200 nm is achieved through thermal annealing, regardless of ion species, energy, or density. This process is confirmed by Raman spectroscopy, indicating changes in defects' configurations. Coupling a focused ion beam system with annealing, we achieve precise control over emitters' spectral and spatial properties, advancing quantum technologies by enabling customization of emitter properties in hBN.
Quantum emitters in hexagonal boron nitride (hBN) crystals are optimal candidates for the observation of single photon emission, but achieving control over their features is a challenging task. In this work, we present the deterministic generation of emitters with selected position and spectral features with a method that combines ion implantation and annealing of the sample. With this method, we even achieved control over the density of emitters. Such control is a fundamental step towards the engineering of emitter ensembles that can be readily embedded in Van der Waals heterostructures and advanced quantum systems.
This contribution discusses the role of hexagonal Boron Nitride (hBN) as a host for photon emitters. In this study we employ gallium ion implantation to create emitters within hBN. Gallium ions are found to be optimal for generating many emitters, when both the ion energy and fluence are carefully controlled. Post-irradiation thermal annealing induces defect transmutation, providing spectral tunability to the emitters. Together with Focused Ion Beam (FIB) implantation, allowing for nanoscale defect positioning, it is possible to precisely pattern multiple photon emitters at various optical frequencies on one platform. Overall, the research highlights hBN potential in advancing quantum technologies.
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