Dr. Fan Ren Profile

Dr. Fan Ren

Distinguished Professor at Univ of Florida

SPIE Involvement:

Conference Program Committee | Author

Publications (25)

Proceedings Article | 5 March 2020 Presentation + Paper

High-voltage high-current vertical geometry Ga2O3 rectifiers

Minghan Xian, Chaker Fares, Patrick Carey, Fan Ren, Marko Tadjer, Yu-Te Liao, Chin-Wei Chang, Jenshan Lin, Ribhu Sharma, Mark Law, Peter Raad, Pavel Komarov, Zahabul Islam, Aman Haque, Akito Kuramata, S. Pearton

Proceedings Volume 11281, 112810J (2020) https://doi.org/10.1117/12.2550769

KEYWORDS: Gallium, Switching, Diodes, Silicon carbide, Dielectrics, Crystals, Silicon, Electronics, Gallium nitride, Resistance

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Proceedings Article | 1 March 2019 Presentation + Paper

DC and dynamic switching characteristics of field-plated vertical geometry [beta]-Ga2O3 rectifiers

Jiancheng Yang, Patrick Carey, Fan Ren, Yen-Ting Chen, Y. Liao, Chin-Wei Chang, Jenshan Lin, Marko Tadjer, S. Pearton, David Smith, Akito Kuramata

Proceedings Volume 10919, 1091916 (2019) https://doi.org/10.1117/12.2515006

KEYWORDS: Gallium, Switching, Diodes, Silicon carbide, Doping, Gallium nitride, Ionization, Electrons, Field effect transistors, Dielectrics

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Proceedings Article | 23 February 2018 Presentation + Paper

Radiation and process-induced damage in Ga2O3

S. Pearton, Jiancheng Yang, F. Ren, G. Yang, Jihyun Kim, M. Stavola, A. Kuramata

Proceedings Volume 10532, 105320K (2018) https://doi.org/10.1117/12.2284486

KEYWORDS: Gallium, Diodes, Annealing, Plasma, Field effect transistors, Etching, Transistors, Ions, Gallium nitride, Dry etching

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Proceedings Article | 19 April 2017 Presentation

Use of sub-bandgap optical pumping to identify defects in AlGaN/GaN high electron mobility transistors (Conference Presentation)

Fan Ren, Stephen Pearton, Tsung Sheng Kang, David Cheney, Brent Gila

Proceedings Volume 10104, 101041A (2017) https://doi.org/10.1117/12.2251166

KEYWORDS: Gallium nitride, Field effect transistors, Optical pumping, Transistors, Telecommunications, Satellite communications, Satellites, Advanced radar, Piezoelectric effects, Nondestructive evaluation

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Proceedings Article | 27 April 2015 Paper

Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation

F. Ren, Y.-H. Hwang, S. Pearton, Erin Patrick, Mark Law

Proceedings Volume 9363, 936312 (2015) https://doi.org/10.1117/12.2076676

KEYWORDS: Field effect transistors, Gallium nitride, Silicon, Transistors, Floods, TCAD, Interfaces, Etching, Virtual reality, Computer simulations

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Proceedings Article | 27 March 2013 Paper

The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors

L. Liu, C. Lo, Y. Xi, Y. Wang, H.-Y. Kim, J. Kim, S. Pearton, O. Laboutin, Y. Cao, J. Johnson, I. Kravchenko, F. Ren

Proceedings Volume 8625, 86250W (2013) https://doi.org/10.1117/12.2007287

KEYWORDS: Field effect transistors, Reliability, Transistors, Gallium nitride, Metals, Materials science, Heterojunctions, Silicon carbide, Electrodes, Sapphire

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Proceedings Article | 15 October 2012 Paper

Pushing or pulling droplets on ZnO nanorods with an UV light

Chien-Wei Liu, Chen-Pin Hsu, Jer-Liang Andrew Yeh, Yuh-Chang Sun, Yu-Fen Huang, Byung Hwan Chu, Fan Ren, Yu-Lin Wang

Proceedings Volume 8463, 846306 (2012) https://doi.org/10.1117/12.929901

KEYWORDS: Ultraviolet radiation, Zinc oxide, Quartz, Zinc, Thin films, Absorption, Nanoengineering, Liquids, Thermal effects, Nanorods

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Proceedings Article | 26 May 2011 Paper

Characteristics of CO sensors made by polar and nonpolar ZnO nanowires gated AlGaN/GaN high electron mobility transistor

S. C. Hung, C. W. Chen, C. Y. Shieh, G. C. Chi, F. Ren, S. J. Pearton

Proceedings Volume 8024, 80240P (2011) https://doi.org/10.1117/12.883015

KEYWORDS: Zinc oxide, Carbon monoxide, Field effect transistors, Sensors, Transistors, Chemical vapor deposition, Oxygen, Gallium nitride, Crystals, Nanowires

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Proceedings Article | 5 May 2010 Paper

AlGaN/GaN high-electron mobility transistor-based sensors for environmental and bio-applications

B. Chu, Y. L. Wang, K. Chen, C. Chang, C. F. Lo, S. Pearton, G. Papadi, J. Coleman, B. Sheppard, C. Dungen, Kevin Kroll, Nancy Denslow, A. Dabiran, P. Chow, J. Johnson, E. Pine, K. Linthicum, F. Ren

Proceedings Volume 7679, 76790Q (2010) https://doi.org/10.1117/12.844995

KEYWORDS: Sensors, Field effect transistors, Ions, Mercury, Carbon dioxide, Zinc oxide, Environmental sensing, Signal detection, Molecules, Nanorods

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Proceedings Article | 15 February 2010 Paper

Oxide thin film transistors on novel flexible substrates

S. Pearton, Wantae Lim, Erica Douglas, Fan Ren, Young Woo Heo, D. Norton

Proceedings Volume 7603, 760315 (2010) https://doi.org/10.1117/12.844935

KEYWORDS: Transistors, Oxides, Thin films, Glasses, Zinc oxide, Dielectrics, Sputter deposition, Oxygen, Semiconductors, Transparency

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Proceedings Article | 19 February 2009 Paper

AlGaN/GaN HEMT And ZnO nanorod-based sensors for chemical and bio-applications

B. Chu, B. Kang, H. Wang, C. Chang, T, Lele, Y. Tseng, A. Goh, A. Sciullo, W. Wu, J. N. Lin, B. Gila, S. Pearton, J. Johnson, E. Piner, K. Linthicum, F. Ren

Proceedings Volume 7216, 72162A (2009) https://doi.org/10.1117/12.802823

KEYWORDS: Field effect transistors, Sensors, Glucose, Zinc oxide, Signal detection, Biosensors, Electrodes, Gas sensors, Liquids, Nanorods

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Proceedings Article | 16 February 2009 Paper

Improved surface morphology and edge definition for ohmic contacts to AlGaN/GaN heterostructures

Yung-Ling Lan, Hung-Cheng Lin, Hsueh-Hsing Liu, Geng-Yen Lee, Fan Ren, Stephen Pearton, Mao-Nan Chang, Jen-Inn Chyi

Proceedings Volume 7216, 72162P (2009) https://doi.org/10.1117/12.810165

KEYWORDS: Annealing, Surface roughness, Heterojunctions, Chromium, Molybdenum, Resistance, Aluminum, Nickel, Gallium nitride, Scanning electron microscopy

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Proceedings Article | 30 April 2008 Paper

Wide bandgap nanowire sensors

S. Pearton, B. Kang, B. Gila, D. Norton, L. Tien, H. Wang, F. Ren, J. Lin

Proceedings Volume 6959, 695903 (2008) https://doi.org/10.1117/12.760421

KEYWORDS: Zinc oxide, Sensors, Glucose, Hydrogen, Electrodes, Field effect transistors, Gold, Metals, Nanorods, Nanowires

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Proceedings Article | 15 February 2008 Paper

P-type ZnO thin films via phosphorus doping

D. Norton, H. Kim, J. M Erie, S. Pearton, Y. Wang, F. Ren

Proceedings Volume 6895, 68950W (2008) https://doi.org/10.1117/12.785467

KEYWORDS: Zinc oxide, Doping, Phosphorus, Annealing, Hydrogen, Oxygen, Thin films, Capacitance, Semiconductors, Pulsed laser deposition

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Proceedings Article | 25 September 2007 Paper

Wide bandgap nanowire sensors

S. Pearton, B. Kang, B. Gila, D. Norton, L. Tien, O. Kryliouk, H. Wang, F. Ren, Yeoung-Woo Heo

Proceedings Volume 6769, 67690A (2007) https://doi.org/10.1117/12.731121

KEYWORDS: Hydrogen, Zinc oxide, Sensors, Indium nitride, Resistance, Platinum, Palladium, Electrodes, Nanorods, Nanowires

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SPIE Journal Paper | 1 July 2007

Flip bonding with SU-8 for hybrid AlxGa1-xAs-polysilicon MEMs-tunable filter

Edward Ochoa, Lavern Starman, Robert Bedford, Thomas Nelson, James Ehret, Michael Harvey, Travis Anderson, Fan Ren

JM3, Vol. 6, Issue 03, 033007, (July 2007) https://doi.org/10.1117/12.10.1117/1.2767326

KEYWORDS: Gold, Actuators, Aluminum, Gallium, Reflectors, Microelectromechanical systems, Silicon, Distributed Bragg reflectors, Optical lithography, Chemistry

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Proceedings Article | 12 September 2006 Paper

Effect of argon annealing of phosphorus-doped ZnO and (Zn,Mg)O thin-films-grown pulsed laser deposition

Yuanjie Li, Hyun-Sik Kim, Jean-Marie Erie, Fan Ren, Stephen Pearton, David Norton

Proceedings Volume 6337, 633708 (2006) https://doi.org/10.1117/12.694798

KEYWORDS: Zinc oxide, Zinc, Annealing, Oxygen, Argon, Doping, Magnesium, Phosphorus, Pulsed laser deposition, Crystals

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Proceedings Article | 2 March 2006 Paper

Synthesis and characterization of (Zn,Mg)O:P/ZnO heterostructures

Yuanjie Li, J. Erie, H. Kim, S. Pearton, D. Norton, J. Chen, F. Ren

Proceedings Volume 6122, 61220R (2006) https://doi.org/10.1117/12.645105

KEYWORDS: Zinc oxide, Heterojunctions, Oxygen, Laser energy, Sapphire, Edge emitting semiconductor lasers, Temperature metrology, Gold, Atomic force microscopy, Light emitting diodes

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Proceedings Article | 14 September 2005 Paper

Fabrication of p-n junctions in as-grown ZnMgO/ZnO films

Hyuck Soo Yang, Y. Li, D. Norton, S. Pearton, Soohwan Jang, F. Ren, L. Boatner

Proceedings Volume 5941, 59411P (2005) https://doi.org/10.1117/12.616668

KEYWORDS: Zinc oxide, Annealing, Resistance, Temperature metrology, Doping, Diodes, Ultraviolet radiation, Titanium, Electronics, Pulsed laser deposition

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Proceedings Article | 13 September 2004 Paper

Characterization of InGaAs self-mixing detectors for chirp amplitude-modulated ladar (CAML)

Keith Aliberti, William Ruff, Hongen Shen, Peter Newman, Mark Giza, Wendy Sarney, Michael Stead, John Dammann, Rishabh Mehandru, Fan Ren

Proceedings Volume 5412, (2004) https://doi.org/10.1117/12.542072

KEYWORDS: Sensors, LIDAR, Indium gallium arsenide, Receivers, Modulation, Signal detection, Semiconductor lasers, Target detection, Gallium arsenide, Photodetectors

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Proceedings Article | 18 June 2004 Paper

Analysis of InGaAs metal-semiconductor-metal OE mixers

Paul Shen, Keith Aliberti, Barry Stann, Peter Newman, Rishabh Mehandru, Fan Ren

Proceedings Volume 5349, (2004) https://doi.org/10.1117/12.527487

KEYWORDS: Photodetectors, Indium gallium arsenide, Electrons, Optoelectronics, Diodes, Circuit switching, Electroluminescence, Modulation, Absorption, Electrodes

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Proceedings Article | 21 August 2003 Paper

Mixing characteristics of InAlAs/InGaAs metal-semiconductor-metal optoelectronic mixers

Keith Aliberti, Hongen Shen, Barry Stann, Rishabh Mehandru, Fan Ren

Proceedings Volume 5086, (2003) https://doi.org/10.1117/12.512030

KEYWORDS: Indium gallium arsenide, Photodetectors, Optoelectronics, LIDAR, Sensors, Circuit switching, Diodes, Gallium arsenide, Absorption, Electroluminescence

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Proceedings Article | 25 July 2003 Paper

Finite difference analysis of thermal characteristics of CW operation 850-nm lateral current injection and implant-apertured VCSEL with flip-chip bond design

Rishabh Mehandru, Gerard Dang, Kelly Ip, Suku Kim, Fan Ren, Stephen Pearton, William Hobson, John Lopata, Wayne Chang, H. Shen

Proceedings Volume 4986, (2003) https://doi.org/10.1117/12.480855

KEYWORDS: Vertical cavity surface emitting lasers, Continuous wave operation, Resistance, Mirrors, Optical switching, Optical fibers, Semiconductors, Analytical research, Chemical analysis, Signal processing

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Proceedings Article | 28 August 2002 Paper

Advanced processing of group-III nitrides

S. Pearton, Fan Ren, B. Gila, Cammy Abernathy

Proceedings Volume 10303, 1030308 (2002) https://doi.org/10.1117/12.482624

KEYWORDS: Gallium nitride, Electronic components, Doping, Dielectrics

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Proceedings Article | 1 April 1999 Paper

1.55-um Er-doped GaN LED

Hongen Shen, Jagadeesh Pamulapati, Monica Taysing-Lara, M. Wood, Richard Lareau, Matthew Ervin, John Mackenzie, Fan Ren, Corinne Abernathy, John Zavada

Proceedings Volume 3622, (1999) https://doi.org/10.1117/12.344498

KEYWORDS: Erbium, Gallium nitride, Silicon, Semiconductors, Electroluminescence, Annealing, Ions, Dielectrics, Light emitting diodes, Diodes

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Showing 5 of 25 publications

Conference Committee Involvement (9)

Gallium Nitride Materials and Devices XX

27 January 2025 | San Francisco, California, United States

Gallium Nitride Materials and Devices XIX

29 January 2024 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVIII

30 January 2023 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVII

24 January 2022 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVI

6 March 2021 | Online Only, California, United States

Showing 5 of 9 Conference Committees

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