Dr. Frédéric Boeuf Profile

Dr. Frédéric Boeuf

at STMicroelectronics SA

SPIE Involvement:

Conference Program Committee | Author

Publications (40)

Proceedings Article | 11 June 2024 Presentation

Hybrid III-V/Silicon photonic circuits embedding generation and routing of entangled photon pairs

L. Lazzari, J. Schuhmann, A. Lemaître, M. Amanti, F. Boeuf, F. Raineri, F. Baboux, S. Ducci

Proceedings Volume PC12993, PC1299307 (2024) https://doi.org/10.1117/12.3017043

KEYWORDS: Photonic integrated circuits, Silicon, Quantum entanglement, Waveguides, Tunable filters, Quantum states, Quantum processes, Quantum light, Quantum interferometry, Quantum information applications

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Proceedings Article | 11 June 2024 Presentation

Enhanced optical forces for trapping dielectric nanoparticles with hybrid plasmonic waveguides

Chander Bhan, G. Beaudin, S. Monfray, F. Boeuf, R. Orobtchouk, P. Charette

Proceedings Volume PC12991, PC129910C (2024) https://doi.org/10.1117/12.3016812

KEYWORDS: Near field optics, Dielectrics, Plasmonic waveguides, Nanoparticles, Waveguides, Optical tweezers, Particles, Near field, Metals, Integrated optics

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Proceedings Article | 9 March 2024 Presentation

Monolithic integration of GaAs based compounds on silicon platform for photonic and optoelectronic devices

Thierry Baron, Veronica Letka, Hadi Hijazi, Mattéo Chobé, Leo Mallet-Dida, Mickael Martin, Jérémy Moeyaert, Natalia Massara, Juliette Mignot, Jerome Richy, Christophe Licitra, Romain Thibon, Sophie Barbet, Driss Mouloua, Frédéric Boeuf, Christophe Jany, Karim Hassan

Proceedings Volume PC12890, PC128900H (2024) https://doi.org/10.1117/12.3000351

KEYWORDS: Silicon, Photonic devices, Optoelectronic devices, Gallium arsenide, Silicon photonics, Photodetectors, Near infrared, Superlattices, Distributed Bragg reflectors, Compound semiconductors

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Proceedings Article | 5 March 2022 Presentation + Paper

Performant on-chip photonic detectors with lateral p-i-n silicon-germanium heterojunctions

Daniel Benedikovic, Leopold Virot, Guy Aubin, Jean-Michel Hartmann, Farah Amar, Xavier Le Roux, Carlos Alonso-Ramos, Eric Cassan, Delphine Marris-Morini, Frederic Boeuf, Bertrand Szelag, Laurent Vivien

Proceedings Volume 12004, 120040D (2022) https://doi.org/10.1117/12.2608463

KEYWORDS: Photodetectors, Silicon, Germanium, Waveguides, Diodes, Heterojunctions, Eye, Sensors, Signal detection, Sensor performance

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Short-distance optical communications and large-scale networks are central in telecom, datacom, and information processing technologies. Such applications require high transmission capacity, low energy consumption, implementation at the chip-scale level and cost-effective production. Silicon photonics (SiP) is well-positioned to tackle these growing needs. Indeed, photonic chips enable dense integration of complex functions through light-driven, compact, and high-performance devices. SiP is boosted by complementary metal-oxide-semiconductor (CMOS) processes and toolsets used for decades in the microelectronic industry. CMOS-friendly manufacturing, mature germanium (Ge) epitaxy and open-access foundry model are advantageous for monolithic integration, where a low-loss silicon (Si) platform is associated with advanced opto-electrical efficiency and fast response time. Optical detectors are key building blocks in the SiP library. They leverage progresses made in design strategies, material processing and seamless Si CMOS integration. In particular, chip-integrated silicon-germanium (Si-Ge) photodetectors are aiming for fast, sensitive, and energy-aware operation, with performances that are becoming competitive or even superior to existing and well-adopted III/V-based counterparts. In this work, we present recent advances in waveguide-integrated p-i-n photodetectors based on double silicon-germanium-silicon (Si-Ge-Si) heterojunctions. Hetero-structured Si-Ge-Si photodetectors with a butt-waveguide-coupling and a lateral p-i-n electrical junction are most promising to detect light on a silicon chip at near-infrared (near- IR) wavelengths. They rely on an unique integration approach that yields structures with compact footprints and properly engineered waveguide geometries. Such devices then benefit from improved modal confinement and overall control over the intrinsic region. They are also easy to fabricate and integrate with other passive and active components on a single chip. Si-Ge-Si p-i-n photodetectors were fabricated on 200 mm silicon-on-insulator (SOI) substrates using industrial-scale semiconductor manufacturing processes. Fabricated p-i-n structures were operated under low-voltages and in avalanche regime, respectively. In both situations, devices showed up a reliable high-speed, low-noise, and sensitive signal detection within a mainstream telecom waveband around 1.55 μm.

Proceedings Article | 19 April 2021 Presentation

Hybrid silicon photonics based on doped-crystalline oxides for on-chip light amplification

Alicia Ruiz-Caridad, Guillaume Marcaud, Christian Lafforgue, Xavier Le Roux, Joan Manel Ramirez, Elena Durán-Valdeiglesias, Ludovic Largeau, Thomas Maroutian, Sylvia Matzen, Stephane Collin, Carlos Alonso-Ramos, Guillaume Agnus, Sylvain Guerbert, Stephane Monfray, Frederic Boeuf, Vladyslav Vakarin, Eric Cassan, Delphine Marris-Morini, Philippe Lecoeur, Laurent Vivien

Proceedings Volume 11775, 117750B (2021) https://doi.org/10.1117/12.2589287

KEYWORDS: Silicon photonics, Silicon, Oxides, Waveguides, Light wave propagation, Kerr effect, Zirconium dioxide, Ultraviolet radiation, Transparency, Refractive index

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Proceedings Article | 18 April 2021 Presentation + Paper

High-speed germanium p-i-n avalanche photodetectors on silicon

Daniel Benedikovic, Léopold Virot, Guy Aubin, Jean-Michel Hartmann, Farah Amar, Bertrand Szelag, Xavier Le Roux, Carlos Alonso-Ramos, Paul Crozat, Eric Cassan, Frédéric Boeuf, Jean-Marc Fédéli, Christophe Kopp, Laurent Vivien

Proceedings Volume 11775, 117750G (2021) https://doi.org/10.1117/12.2588981

KEYWORDS: Silicon, Photodetectors, Germanium, Avalanche photodetectors, Nanophotonics, Waveguides, Semiconductors, Heterojunctions, Signal detection, Optoelectronics

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Integrated silicon nanophotonics has progressed a lot over past decades with great promises for many surging applications in optoelectronics, information and communication technologies, sensing or health monitoring. Enabling low-cost, dense integration, and compatibility with modern semiconductor nanofabrication processes, silicon nanophotonics deliver compact and high-performance devices on single chips. A variety of nanophotonic functionalities, both passive and active, are nowadays available on semiconductor substrates, leveraging the maturity of open-access silicon foundries and epitaxial germanium integration. It encompasses essential functions such as light generation and amplification, fast electro-optical modulation, and reliable conversion of optical into electrical signals. Germaniumbased optical photodetectors are main building blocks within the library of integrated silicon nanophotonics, with performances that are nowadays on par with their III-V-based counterparts. Germanium photodetectors integrated at the end of waveguides are attractive for next-generation on-chip interconnections, because of their compactness, bandwidth and speed, energy consumption and cost. In this work, we present our latest advances on silicon-germanium p-i-n waveguide-integrated photodetectors based on lateral silicon-germanium-silicon heterojunctions. Our hetero-structured photodetectors were fabricated on top of 200-mm silicon-on-insulator substrates using industrial-scale fabrication processes compatible with complementary metal-oxide-semiconductor technology. Silicon-germanium p-i-n photodetectors operated under low bias voltages exhibited low dark-currents (~100 nA), cut-off frequencies beyond 50 GHz, and photo-responsivities of about 1.2 A/W. Photodetector sensitivities of -14 dBm and -11 dBm were achieved for communication data rates of 10 Gbps and 25 Gbps, respectively. P-i-n photodetectors with lateral heterojunction operated in an avalanche regime offered an additional degree of freedom to improve device performances. High-speed and low-noise characteristics were obtained in our p-i-n photodetectors upon avalanche operation, with a gain-bandwidth product of 210 GHz and a low carrier impact ionization ratio of about 0.25. The measured sensitivity of avalancheoperated devices was -11 dBm for 40 Gbps signal detection. As demonstrated in the reported achievements, heterostructured p-i-n photodetectors are thus suitable communication devices in future intra-data center links or high-speed optical interconnects.

Proceedings Article | 18 April 2021 Presentation

Efficient dual-band grating coupler for 10 Gbit passive optical networks fabricated by 193-nm deep-ultraviolet lithography

David González-Andrade, Diego Pérez-Galacho, Miguel Montesinos-Ballester, Xavier Le Roux, Eric Cassan, Delphine Marris-Morini, Pavel Cheben, Nathalie Vulliet, Stephane Monfray, Frédéric Boeuf, Laurent Vivien, Aitor Villafranca Velasco, Carlos Alonso-Ramos

Proceedings Volume 11775, 117750H (2021) https://doi.org/10.1117/12.2589704

KEYWORDS: Passive optical networks, Lithography, Deep ultraviolet, Waveguides, Silicon, Wave propagation, Single mode fibers, Reflectivity, Photonic devices, Oxides

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Proceedings Article | 5 March 2021 Presentation + Paper

Si capacitive modulator integration in a 300mm silicon photonics platform using different annealing conditions

I. Charlet, L. Deniel, P. Acosta-Alba, Y. Désières, S. Guerber, S. Kerdilès, J. Lassarre, C. Perrot, C. Euvrard-Colnat, K. Ribaud, P. Grosse, M. Gregoire, K. Rovayaz, L. Mazet, S. Cremer, N. Vulliet, S. Monfray, S. Messaoudène, D. Marris-Morini, F. Boeuf

Proceedings Volume 11691, 116910R (2021) https://doi.org/10.1117/12.2577806

KEYWORDS: Modulators, Silicon, Annealing, Silicon photonics, Waveguides, Transmitters, Transceivers, Oxides, Optoelectronics

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Proceedings Article | 5 March 2021 Presentation + Paper

Fast optical phased array on a 300-mm silicon platform

C. Barrera, S. Guerber, D. Fowler, S. Monfray, A. Montagne, A. Myko, P. Grosse, K. Ribaud, P. Lemaitre, S. Cremer, I. Charlet, L. Vivien, F. Boeuf

Proceedings Volume 11690, 1169007 (2021) https://doi.org/10.1117/12.2582776

KEYWORDS: Phased array optics, Silicon, Waveguides, Modulators, LIDAR, Free space optics, Telecommunications, System integration, Spatial resolution, Solid state electronics

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Proceedings Article | 5 March 2021 Presentation

Frequency comb generation and dual comb spectrocopy using silicon modulators

Delphine Marris-Morini, Lucas Deniel, Erwan Weckenmann, Stephane Monfray, Diego Pérez Galacho, Carlos Alonso Ramos, Laurent Bramerie, Margaux Barbier, Frédéric Boeuf, Laurent Vivien, Christophe Peucheret

Proceedings Volume 11689, 116890F (2021) https://doi.org/10.1117/12.2586606

KEYWORDS: Silicon, Modulators, Frequency combs, Wavelength division multiplexing, Spectroscopy, Electro optics, Data communications

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Proceedings Article | 5 March 2021 Presentation

GeSnOI technology for enhanced Si-based laser designs and performances

Moustafa El Kurdi, Anas Elbaz, Nils von den Driesch, Binbin Wang, Emilie Sakat, Etienne Herth, Gilles Patriarche, Konstantinos Pantzas, Isabelle Sagnes, Xavier Checoury, Jérémie Chrétien, Nicolas Pauc, Vincent Calvo, Frédéric Boeuf, Philippe Boucaud, Alexei Chelnokov, Vincent Reboud, Detlev Grützmacher, Dan Buca, Jean-Michel Hartmann

Proceedings Volume 11705, 117050I (2021) https://doi.org/10.1117/12.2587318

KEYWORDS: Laser development, Silicon, Germanium, Interfaces

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Proceedings Article | 2 April 2020 Presentation + Paper

Dual comb spectroscopy using silicon electro-optical modulators

Lucas Deniel, Erwan Weckenmann, Diego Pérez-Galacho, Laurent Bramerie, Margaux Barbier, Mathilde Gay, Carlos Alonso-Ramos, Frederic Boeuf, Laurent Vivien, Christophe Peucheret, Delphine Marris-Morini

Proceedings Volume 11364, 1136405 (2020) https://doi.org/10.1117/12.2556066

KEYWORDS: Silicon, Spectroscopy, Modulators, Modulation, Electro optics, Frequency combs, Electrooptic modulators, Photonic integrated circuits

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Proceedings Article | 2 April 2020 Presentation + Paper

III-V/Si hybrid optical modulators based on MOS capacitor

Mitsuru Takenaka, Qiang Li, Shuhei Ohno, Frederic Boeuf, Kasidit Toprasertpong, Shinichi Takagi

Proceedings Volume 11364, 1136402 (2020) https://doi.org/10.1117/12.2558305

KEYWORDS: Silicon, Phase shifts, Capacitors, Modulation, Photonic integrated circuits, Hybrid optics, Optical modulators, Integrated optics

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Proceedings Article | 2 April 2020 Presentation

Ultra-wideband flat anomalous dispersion in nanostructured silicon membrane waveguides (Conference Presentation)

Thi Thuy Duong Dinh, Jianhao Zhang, Miguel Montesinos, Xavier Le Roux, Christian Lafforgue, Daniel Benedikovic, Pavel Cheben, Eric Cassan, Delphine Marris-Morini, Gregory Maisons, Mathieu Carras, Sebastien Cremer, Stephane Monfray, Frederic Boeuf, Laurent Vivien, Carlos Alonso-Ramos

Proceedings Volume 11364, 113641E (2020) https://doi.org/10.1117/12.2555819

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Proceedings Article | 2 April 2020 Presentation + Paper

Optimization of deep rib high speed phase modulators on 300mm industrial Si-photonics platform

S. Monfray, S. Cremer, N. Vulliet, E. Dubois, F. Domengie , S. Jan, F. Baille, F. Boeuf

Proceedings Volume 11364, 1136403 (2020) https://doi.org/10.1117/12.2554725

KEYWORDS: Modulators, Silicon, Silicon photonics, Doping, Photonics, Waveguides, Modulation, Manufacturing, Germanium

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Proceedings Article | 2 April 2020 Presentation + Paper

Si capacitive modulator integration in a 300mm silicon photonics platform with strained-SiGe to enhance the electro-optic effect

I. Charlet, M. Douix, S. Guerber, N. Michit, C. Barrera, J. Gaudy, Y. Désières, S. Kerdilès, P. Acosta-Abla, J. Lassarre, C. Perrot, C. Euvard-Colnat, K. Rovayaz, D. Pellissier-Tanon, S. Cremer, N. Vulliet, P. Grosse, S. Monfray, S. Messaoudène, L. Vivien, B. Szelag, D. Marris-Morini, F. Boeuf

Proceedings Volume 11364, 1136406 (2020) https://doi.org/10.1117/12.2556460

KEYWORDS: Modulators, Silicon, Electro optics, Crystals, Oxides, Amorphous silicon, Silicon photonics, Plasma, Dispersion, Modulation

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Proceedings Article | 1 April 2020 Presentation

Improving silicon nitride ring resonator performances on 300 mm industrial environment for point of care applications (Conference Presentation)

Michele Calvo, Guillaume Beaudin, Laurence Mercier-Coderre, Pauline Girault, Pedro Rojo-Romeo, Regis Orobtchouk, Romain Stricher, Stephane Monfray, Serge Ecoffey, Dominique Drouin, Frederic Boeuf, Michael Canva, Paul Charette

Proceedings Volume 11361, 1136105 (2020) https://doi.org/10.1117/12.2555339

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Point-of-care tests (POCT) are important for detecting illnesses and monitoring patients without the need of a medical laboratory. To be useful, POCT must be sensitive, specific, integrated, and affordable. Since the early 2000s, integrated photonics have offered a possible solution for this problem. In particular, silicon micro-ring resonators represent a compact and sensitive choice known in the industry. This paper details the design, fabrication, and characterization of two methods for improving the performance of ring resonators by engineering their cross section. More precisely, improving devices made out of silicon nitride in an industrial environment to work in the infrared (around 1.31 µm). The first approach is to selectively excite the first order mode of the ring resonator’s waveguide. The first order mode, with its greater exposure to the sensing liquid than the fundamental mode, results in a higher device sensitivity. The second method consists in coupling a dielectric mode with a surface plasmon polariton (SPP) forming a hybrid plasmonic waveguide. Hybrid plasmonic waveguides combine the low losses of the dielectric mode with the high sensitivity of the SPP, which increases the sensitivity in comparison to conventional dielectric ring resonators. Furthermore, hybrid plasmonic micro-ring resonators make possible a stable and easy differential functionalization. Through the optical characterization of the devices, this study shows an experimental sensitivity of first order ring resonators of over 200 nm/RIU* and of hybrid plasmonic devices of 300 nm/RIU*. This demonstrates improvement with respect to the reference silicon nitride dielectric ring (120 nm/RIU*). Characterizations were performed using a PolyDiMethylSiloxane (PDMS) fluidic system to prove the compatibility of the substrate to POCT applications. This paper shows two alternative approaches to integrated nano-photonic sensing for point of care testing. The proposed structures, demonstrate not only a higher sensitivity, but consider selectivity and manufacturing issues, which are fundamental for POCT development. *RIU = Refractive Index Unit

Proceedings Article | 26 February 2020 Paper

Silicon chip-integrated fiber couplers with sub-decibel loss

Daniel Benedikovic, Carlos Alonso-Ramos, Sylvain Guerber, Cecilia Dupre, Bertrand Szelag, Xavier Le Roux, Pavel Cheben, Daivid Fowler, Guillaume Marcaud, Vladyslav Vakarin, Diego Perez-Galacho, Delphine Marris-Morini, Eric Cassan, Charles Baudot, Frederic Boeuf, Laurent Vivien

Proceedings Volume 11284, 112840L (2020) https://doi.org/10.1117/12.2543489

KEYWORDS: Silicon, Fiber couplers, Waveguides, Optical design, Nanophotonics, Diffraction gratings, Metamaterials, Lithography, Interfaces, Deep ultraviolet

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Proceedings Article | 26 February 2020 Presentation + Paper

Heterodyne detection for the measurement of electro-optical frequency combs generated with a silicon Mach-Zehnder modulator

Lucas Deniel, Erwan Weckenmann, Diego Pérez-Galacho, Laurent Bramerie, Charles Baudot, Margaux Barbier, Mathilde Gay, Frédéric Boeuf, Laurent Vivien, Christophe Peucheret, Delphine Marris-Morini

Proceedings Volume 11285, 1128516 (2020) https://doi.org/10.1117/12.2543962

KEYWORDS: Modulators, Silicon, Modulation, Electro optics, Heterodyning, Frequency combs, Spectrum analysis

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Proceedings Article | 25 February 2020 Paper

28 Gbps silicon-germanium hetero-structure avalanche photodetectors

Daniel Benedikovic, Léopold Virot, Guy Aubin, Jean-Michel Hartmann, Farah Amar, Bertrand Szelag, Xavier Le Roux, Carlos Alonso-Ramos, Paul Crozat, Eric Cassan, Delphine Marris-Morini, Charles Baudot, Frédéric Boeuf, Jean-Marc Fédéli, Christophe Kopp, Laurent Vivien

Proceedings Volume 11283, 112830Y (2020) https://doi.org/10.1117/12.2543499

KEYWORDS: Photodetectors, Silicon, Germanium, Waveguides, Avalanche photodetectors, Signal detection, Eye, Integrated optics, Quantum efficiency, Diodes

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Owing to its low-cost, high-yield, and dense integration ability, silicon nanophotonics is a good candidate to tackle the needs of exponentially growing communications in data centers, high-performance computers, and cloud services. Moreover, a number of nanophotonic functions are now available on a single chip, as they take advantages of silicon-foundry process maturity and epitaxial germanium integration. Optical photodetectors are key building blocks in the library of group-IV components and their performances are quite successful nowadays. In particular, silicon-germanium waveguide-integrated photodetectors are fixing new standards for next generation of on-chip interconnects in terms of compactness, speed, power consumption and cost. Indeed, conventional pin photodetectors yield good responsivities (~1 A/W in a 1.5 μm wavelength range), high bandwidths (~50 GHz), and dark currents well below 1 μA. Despite recent advances, their optical power sensitivities remain rather modest and speeds are limited to 25 Gbps only, however. Compensating for the insufficient photodetector sensitivity requires higher transmitter output powers and therefore higher energy consumption. Additional energy savings can be obtained by eliminating receiver electronics. Alternatively, an appealing approach is to exploit device structures with an internal multiplication gain to lower even more the power budget and improve energy efficiency of chip-based optical links. In this work, we report on waveguide-integrated photodetectors with lateral silicon-germanium-silicon heterojunctions. Here, we present avalanche photodetectors fabricated on 200-mm silicon-on-insulator wafers using complementary metal-oxide-semiconductor-compatible processes. Devices operate in the low-gain-regime to facilitate high-speed link operations at 1.55 μm wavelengths. An error-free signal detection was achieved at 28 Gbps, with power sensitivity of -11 dBm for 10^-9 bit-error-rate, which is a relevant link rate for emerging chip-scale optical interconnects.

Proceedings Article | 26 April 2019 Paper

Enhanced performance of integrated silicon nanophotonic devices engineered by sub-wavelength grating structures

Daniel Benedikovic, Mathias Berciano, Carlos Alberto Alonso-Ramos, Xavier Le Roux, Sylvain Guerber, Guillaume Marcaud, Vladyslav Vakarin, Diego Pérez-Galacho, Eric Cassan, Delphine Marris-Morini, Pavel Cheben, Frédéric Boeuf, Charles Baudot, Laurent Vivien

Proceedings Volume 11031, 1103104 (2019) https://doi.org/10.1117/12.2520780

KEYWORDS: Waveguides, Silicon, Nanophotonics, Dispersion, Metamaterials, Fiber couplers, Resonators, Microrings, Optical design, Diffraction gratings

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Proceedings Article | 26 April 2019 Presentation + Paper

Optical gain evaluation on rare-earth doped Yttria-stabilized zirconia for hybrid integration on silicon photonics platforms

Alicia Ruiz-Caridad, Guillaume Marcaud, Joan Manel Ramírez, Ludovic Largeau, Thomas Maroutian, Sylvia Matzen, Carlos Alonso-Ramos, Guillaume Agnus, Sylvain Guerber, Charles Baudot, Frederic Boeuf, Vladyslav Vakarin, Elena Duran-Valdeiglesias, Eric Cassan, Delphine Marris-Morini, Philippe Lecoeur, Laurent Vivien

Proceedings Volume 11031, 110310Q (2019) https://doi.org/10.1117/12.2522452

KEYWORDS: Erbium, Silicon, Waveguides, Functional oxides, Sapphire, Integrated optics, Zirconium dioxide, Silicon photonics, Silicon films, Ions

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Proceedings Article | 4 March 2019 Presentation + Paper

Generation of O-band PAM-4 signal using a silicon modulator driven by two binary sequences

L. Deniel, M. Gay, D. Pérez-Galacho, C. Baudot, L. Bramerie, O. Ozolins, F. Boeuf, L. Vivien, C. Peucheret, D. Marris-Morini

Proceedings Volume 10923, 1092317 (2019) https://doi.org/10.1117/12.2507430

KEYWORDS: Phase shifts, Modulators, Silicon, Binary data, Modulation, Waveguides, Electro optical modeling, Digital signal processing, Signal attenuation, Silicon photonics

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Proceedings Article | 4 March 2019 Presentation + Paper

High-performance waveguide photodetectors based on lateral Si/Ge/Si heterojunction

Daniel Benedikovic, Leopold Virot, Guy Aubin, Farah Amar, Bertrand Szelag, Bayram Karakus, Jean-Michel Hartmann, Carlos Alonso-Ramos, Xavier Le Roux, Paul Crozat, Delphine Marris-Morini, Eric Cassan, Charles Baudot, Frederic Boeuf, Jean-Marc Fedeli, Christophe Kopp, Laurent Vivien

Proceedings Volume 10921, 109210O (2019) https://doi.org/10.1117/12.2508726

KEYWORDS: Photodetectors, Germanium, Silicon, Waveguides, Heterojunctions, Nanophotonics, Eye, Signal detection, Optical communications, Ion implantation

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Proceedings Article | 4 March 2019 Presentation + Paper

Fiber grating coupler development for Si-photonics process design kits at CEA-LETI

Daivid Fowler, Philippe Grosse, Fabien Gays, Bertrand Szelag, Charles Baudot, Nathalie Vuillet, Jonathon Planchot, Frederic Boeuf

Proceedings Volume 10922, 1092205 (2019) https://doi.org/10.1117/12.2511845

KEYWORDS: Semiconducting wafers, Optical design, Etching, Silicon photonics, Fiber couplers, Photonics, Optical proximity correction, Electronics, Silicon, Lithography

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Proceedings Article | 22 May 2018 Paper

Integrated SiN on SOI dual photonic devices for advanced datacom solutions

Sylvain Guerber, Carlos Alonso-Ramos, Daniel Benedikovic, Diego Pérez-Galacho, Xavier Le Roux, Nathalie Vulliet, Sébastien Crémer, Laurène Babaud, Jonathan Planchot, Daniel Benoit, Paul Chantraine, François Leverd, Delia Ristoiu, Philippe Grosse, Delphine Marris-Morini, Laurent Vivien, Charles Baudot, Frédéric Boeuf

Proceedings Volume 10686, 106860W (2018) https://doi.org/10.1117/12.2306160

KEYWORDS: Silicon, Semiconducting wafers, Silicon photonics, Polarization, Waveguides, Coarse wavelength division multiplexing, Data communications, Photonic devices, Wave propagation, Wavelength division multiplexing

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Proceedings Article | 21 May 2018 Presentation + Paper

Low-loss grating-coupled optical interfaces for large-volume fabrication with deep-ultraviolet optical lithography

Daniel Benedikovic, Carlos Alberto Alonso-Ramos, Sylvain Guerber, Diego Pérez-Galacho, Vladyslav Vakarin, Guillaume Marcaud, Xavier Le Roux, Eric Cassan, Delphine Marris-Morini, Pavel Cheben, Frédéric Boeuf, Charles Baudot, Laurent Vivien

Proceedings Volume 10686, 106860T (2018) https://doi.org/10.1117/12.2306258

KEYWORDS: Fiber couplers, Diffraction gratings, Silicon, Optical design, Deep ultraviolet, Reflectivity, Optical lithography, Interfaces, Waveguides, Etching

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Proceedings Article | 5 April 2018 Presentation

Advanced solutions in silicon photonics using traditional fabrication methods and materials of CMOS technologies (Conference Presentation)

Charles Baudot, Maurin Douix, Sylvain Guerber, Sébastien Crémer, Nathalie Vulliet, Jonathan Planchot, Romuald Blanc, Laurène Babaud, Carlos Alonso-Ramos, Diego Pérez-Galacho, Sonia Messaoudène, Sébastien Kerdiles, Daniel Benedikovic, Catherine Euvard-Colnat, Eric Cassan, Delphine Marris-Morini, Laurent Vivien, Pablo Acosta-Alba, Frédéric Boeuf

Proceedings Volume 10537, 105370G (2018) https://doi.org/10.1117/12.2290252

KEYWORDS: Silicon, Silicon photonics, CMOS technology, Phase shifting, Waveguides, Phase shifts, Silica, Modulators, Modulation, Amplitude modulation

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Proceedings Article | 14 March 2018 Presentation

High-directionality L-shaped fiber-chip grating couplers realized in 300-mm silicon-on-insulator platform with deep-ultraviolet lithography (Conference Presentation)

Carlos Alonso-Ramos, Daniel Benedikovich, Diego Pérez-Galacho, Sylvain Guerber, Vladyslav Vakarin, Guillaume Marcaud, Xavier Le Roux, Eric Cassan, Delphine Marris-Morini, Pavel Cheben, Frédéric Boeuf, Charles Baudot, Laurent Vivien

Proceedings Volume 10535, 105350W (2018) https://doi.org/10.1117/12.2290584

KEYWORDS: Diffraction gratings, Fiber couplers, Silicon, Deep ultraviolet, Lithography, Etching, Apodization, Diffraction, Mirrors, Semiconducting wafers

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Proceedings Article | 17 May 2017 Presentation + Paper

Simplified model enabling optimization of silicon modulators

Diego Perez-Galacho, Delphine Marris-Morini, Remco Stoffer, Eric Cassan, Charles Baudot, Twan Korthorst, Frederic Boeuf, Laurent Vivien

Proceedings Volume 10242, 102420I (2017) https://doi.org/10.1117/12.2265792

KEYWORDS: Modulation, 3D modeling, Computer simulations, Doping, Waveguides, Performance modeling, Integrated optics, Modulators, Silicon, Silicon photonics, Phase shift keying, Telecommunications, Optical interconnects, Optimization (mathematics), Microtechnology, Photonics

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Proceedings Article | 28 April 2017 Presentation

Silicon photonic transceivers for beyond 1-Tb/s datacom applications (Conference Presentation)

Segolene Olivier, Corrado Sciancalepore, Karim Hassan, Daivid Fowler, Badhise Ben Bakir, Thomas Ferroti, Hélène Duprez, Jocelyn Durel, Alexis Abraham, Simon Plantier, Bertrand Szelag, Sylvie Menezo, Charles Baudot, Frédéric Boeuf, Frederic Gardes, Nannicha Hattasan, Liam O'Faolain, Delphine Marris-Morini, Andrea Ghilioni, Melchiorre Bruccoleri, Anthony Martinez, Richard Pitwon, Nino Crameri, Tobias Lamprecht

Proceedings Volume 10109, 101090G (2017) https://doi.org/10.1117/12.2255719

KEYWORDS: Silicon photonics, Transceivers, Silicon, Semiconductor lasers, Hybrid silicon lasers, Photonic integrated circuits, Chemical elements, Data communications, Integrated optics, Electronics

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Proceedings Article | 16 February 2017 Presentation + Paper

Monolithic integration of hybrid III-V/Si lasers and Si-based modulators for data transmission up to 25Gbps

Thomas Ferrotti, Benjamin Blampey, Christophe Jany, Hélène Duprez, Alain Chantre, Frédéric Boeuf, Christian Seassal, Badhise Ben Bakir

Proceedings Volume 10106, 101060J (2017) https://doi.org/10.1117/12.2252760

KEYWORDS: Modulators, Semiconductor lasers, Transmitters, Data transmission, Photonic integrated circuits, Silicon, Hybrid silicon lasers, Waveguides, Silicon photonics, Laser sources, Mirrors, Semiconducting wafers, Etching, Electrodes, Doping

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Proceedings Article | 13 May 2016 Presentation + Paper

DAPHNE silicon photonics technological platform for research and development on WDM applications

Charles Baudot, Antonio Fincato, Daivid Fowler, Diego Perez-Galacho, Aurélie Souhaité, Sonia Messaoudène, Romuald Blanc, Claire Richard, Jonathan Planchot, Come De-Buttet, Bastien Orlando, Fabien Gays, Cécilia Mezzomo, Emilie Bernard, Delphine Marris-Morini, Laurent Vivien, Christophe Kopp, Frédéric Boeuf

Proceedings Volume 9891, 98911D (2016) https://doi.org/10.1117/12.2229035

KEYWORDS: Silicon, Wavelength division multiplexing, Waveguides, Germanium, Silicon photonics, Etching, Optical lithography, Photonic integrated circuits, Computer aided design, Transmission electron microscopy

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Proceedings Article | 15 March 2016 Paper

Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics

Jocelyn Durel, Thomas Ferrotti, Alain Chantre, Sébastien Cremer, Julie Harduin, Stéphane Bernabé, Christophe Kopp, Frédéric Boeuf, Badhise Ben Bakir, Jean-Emmanuel Broquin

Proceedings Volume 9750, 97500O (2016) https://doi.org/10.1117/12.2212309

KEYWORDS: Silicon photonics, Silicon, Waveguides, Semiconductor lasers, Hybrid silicon lasers, Mirrors, Metals, Silica, Etching, Oxides

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Proceedings Article | 27 February 2015 Paper

Power-efficient carrier-depletion SOI Mach-Zehnder modulators for 4x25Gbit/s operation in the O-band

Thomas Ferrotti, Alain Chantre, Benjamin Blampey, Hélène Duprez, Frédéric Milesi, André Myko, Corrado Sciancalepore, Karim Hassan, Julie Harduin, Charles Baudot, Sylvie Menezo, Frédéric Boeuf, Badhise Ben Bakir

Proceedings Volume 9367, 93670D (2015) https://doi.org/10.1117/12.2078364

KEYWORDS: Modulators, Doping, Silicon, Transmitters, Electrodes, Waveguides, Modulation, Phase shifts, Semiconductor lasers, Seaborgium

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Proceedings Article | 8 March 2014 Paper

Introducing photonic devices for 40Gbits/s wavelength division multiplexing transceivers on 300-mm SOI wafers using CMOS processes

Charles Baudot, Jean-Marc Fédéli, Delphine Marris-Morini, Boris Caire-Remonnay, Léopold Virot, Ségolène Olivier, André Myko, Philippe Grosse, Gilles Grand, Badhise Ben Bakir, Jean-Michel Hartmann, Nacima Allouti, Sébastien Barnola, Christian Vizioz, Maurice Rivoire, Aurélien Seignard, Nathalie Vulliet, Aurélie Souhaité, Sonia Messaoudène, Ian O'Connor, Laurent Vivien, Sylvie Menezo, Frédéric Boeuf

Proceedings Volume 8988, 89880O (2014) https://doi.org/10.1117/12.2042496

KEYWORDS: Germanium, Silicon, Waveguides, Semiconducting wafers, Etching, Photodiodes, Photomasks, Wavelength division multiplexing, Lithography, Doping

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Proceedings Article | 8 March 2014 Paper

40 Gbit/s silicon modulators fabricated on 200-mm and 300-mm SOI wafers

Delphine Marris-Morini, Charles Baudot, Jean-Marc Fédéli, Gilles Rasigade, Nathalie Vuillet, Aurélie Souhaité, Melissa Ziebell, Pierette Rivalin, Ségolène Olivier, Paul Crozat, David Bouville, Sylvie Menezo, Frédéric Boeuf, Laurent Vivien

Proceedings Volume 8990, 899012 (2014) https://doi.org/10.1117/12.2039288

KEYWORDS: Modulators, Phase shifts, Diodes, Silicon, Semiconducting wafers, Waveguides, Silicon photonics, Optical modulators, Microelectronics, Wafer-level optics

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Proceedings Article | 22 May 2013 Paper

Ge on Si waveguide-integrated photodiodes for high speed and low power receivers

Léopold Virot, Laurent Vivien, Jean Michel Hartmann, Jean-Marc Fédéli, Delphine Marris-Morini, Eric Cassan, Charles Baudot, Frédéric Boeuf

Proceedings Volume 8767, 87670A (2013) https://doi.org/10.1117/12.2016865

KEYWORDS: Photodiodes, Germanium, Silicon, Waveguides, Semiconducting wafers, Receivers, Photodetectors, Ion implantation, Integrated circuits, Diodes

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Proceedings Article | 9 May 2012 Paper

40Gbit/s germanium waveguide photodetector on silicon

Léopold Virot, Laurent Vivien, Andreas Polzer, Delphine Marris-Morini, Johann Osmond, Jean Michel Hartmann, Paul Crozat, Eric Cassan, Charles Baudot, Christophe Kopp, Frédéric Boeuf, Horst Zimmermann, Jean Marc Fédéli

Proceedings Volume 8431, 84310A (2012) https://doi.org/10.1117/12.923854

KEYWORDS: Germanium, Silicon, Waveguides, Photodiodes, Photodetectors, Eye, Silica, PIN photodiodes, Epitaxy, Semiconducting wafers

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Proceedings Article | 6 May 2005 Paper

Electron beam direct write lithography flexibility for ASIC manufacturing: an opportunity for cost reduction

L. Pain, M. Jurdit, J. Todeschini, S. Manakli, B. Icard, B. Minghetti, G. Bervin, A. Beverina, F. Leverd, M. Broekaart, P. Gouraud, V. De Jonghe, Ph. Brun, S. Denorme, F. Boeuf, V. Wang, D. Henry

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.601498

KEYWORDS: Photomasks, Electron beam direct write lithography, Manufacturing, Lithography, Optical proximity correction, Semiconducting wafers, Optics manufacturing, Optical lithography, Standards development, Photoresist processing

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