Dr. Frederick T. Chen Profile

Dr. Frederick T. Chen

Sr. Technology Manager at Winbond Electronics

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Author

Publications (12)

SPIE Journal Paper | 25 March 2014

Sidewall profile engineering for the reduction of cut exposures in self-aligned pitch division patterning

Frederick Chen, Wei-Su Chen, Ming-Jinn Tsai, Tzu-Kun Ku

JM3, Vol. 13, Issue 01, 011008, (March 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.1.011008

KEYWORDS: Optical lithography, Etching, Photoresist materials, Photomasks, Phase shifts, Photoresist developing, Modulation, Double patterning technology, Distortion, Anisotropic etching

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Proceedings Article | 12 April 2013 Paper

Sidewall profile inclination modulation mask (SPIMM): modification of an attenuated phase-shift mask for single-exposure double and multiple patterning

Frederick Chen, Wei-Su Chen, Ming-Jinn Tsai, Tzu-Kun Ku

Proceedings Volume 8683, 868311 (2013) https://doi.org/10.1117/12.2008886

KEYWORDS: Photomasks, Photoresist materials, Etching, Optical lithography, Phase shifts, Electron beam lithography, Modulation, Phase shift keying, Immersion lithography, Double patterning technology

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Proceedings Article | 29 March 2013 Paper

Sub-30nm TiN/Ti/HfOx pillar formed by tone reverse processes for RRAM applications

Wei-Su Chen, Peng-Sheng Chen, Hong Chih Chen, Hung-Wen Wei, Frederick Chen, Tzu-Kun Ku

Proceedings Volume 8685, 86850S (2013) https://doi.org/10.1117/12.2010377

KEYWORDS: Etching, Image processing, Scanning electron microscopy, Cadmium, Electron beam lithography, Tin, Oxides, Resistance, Atomic layer deposition, Critical dimension metrology

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New non-volatile memory, like RRAM, needs high aspect ratio (AR) bi-layer resist (BLR) pillar pattern to act as etch mask for sub-50 nm cell metal pillar definition [1]. HSQ/AR3 resist pillar is still not enough for patterning RRAM pillar since (1) AR is limited at ~7 which is still marginal in etching resistance, (2) BLR resist pillar CD is limited by dry development positive CD-bias, (3) BLR resist pillar is easy to collapse during venting to air, and (4) BLR resist pillar AR is lower for looser pillar densities which degrades the etching resistance. Tone reverse process flow for forming RRAM pillar is developed in this study to overcome these drawbacks. Thermal reflow assists the formation of sub-30 nm contact holes (C/Hs) on ZEP520A e-beam resist. Experimental results are summarized below. All the resolved CDs of C/H on ZEP520A with designed CD (DCD) of 40-100 nm are larger than 100 nm without proximity effect correction (PEC) on blank RRAM film stacking substrate. Smallest etched C/H on LTO after thermal reflow process is 14.4 nm. CD-bias of etched C/H on LTO relative to that of resist C/H after thermal reflow is larger for looser C/Hs. Thermal reflow of ZEP520A is C/H size before reflow, density, sidewall profile and reflow time dependent. NiOx hard mask is apparently without deposited into C/H smaller than 20 nm due to PVD deposition limit since the NiOx dot image disappeared after etching of LTO film for tone reverse. Smallest CD of TiN/Ti/HfOx RRAM pillar by tone reverse process flow is 28.8 nm using NiOx hard mask dot CD of 22.9 nm formed on 20.5 nm etched C/H on LTO after reflow. Uniform CD distribution of designed C/Hs result in uniformly distributed CDs after reflow / LTO etching / RRAM pillar formation. In summary, tone reverse process flow for RRAM pillar formation is successfully developed which has potential for patterning RRAM pillar of CD smaller than 20 nm in the help of NiOx hard mask deposition by atomic layer deposition (ALD) into oxide C/H in the future.

Proceedings Article | 29 March 2013 Paper

Sub-14 nm HSQ line patterning by e-beam dose proximity effect correction assisted with designed line CD/pitch split

Wei-Su Chen, Chu-Ya Yang, Chiung Yu Lo, Hung-Wen Wei, Frederick Chen, Tzu-Kun Ku

Proceedings Volume 8682, 868211 (2013) https://doi.org/10.1117/12.2010364

KEYWORDS: Standards development, Modulation, Image resolution, Electron beam lithography, Scattering, Critical dimension metrology, Laser scattering, Oxides, Backscatter, Point spread functions

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Proceedings Article | 20 March 2012 Paper

Substrate and underlayer dependence of sub-32nm e-beam HSQ pillar patterning process for RRAM application

Wei-Su Chen, Peng-Sheng Chen, Hung-Wen Wei, Frederick Chen, Ming-Jinn Tsai, Tzu-Kun Ku

Proceedings Volume 8325, 83250V (2012) https://doi.org/10.1117/12.915474

KEYWORDS: Etching, Cadmium, Image resolution, Electron beam lithography, Plasmas, Photomasks, Carbon, Coating, Plasma etching, Fluorine

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Proceedings Article | 17 March 2012 Paper

Transfer optimized dry development process of sub-32nm HSQ/AR3 BLR resist pillar from low-K etcher to metal etcher

Wei-Su Chen, Peng-Sheng Chen, Hung-Wen Wei, Frederick Chen, Ming-Jinn Tsai, Tzu-Kun Ku

Proceedings Volume 8328, 83280P (2012) https://doi.org/10.1117/12.915488

KEYWORDS: Etching, Oxygen, Photoresist processing, Plasma, Metals, Cadmium, Scanning electron microscopy, Plasma etching, Dry etching, Image processing

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Proceedings Article | 13 March 2012 Paper

Complementary polarity exposures for cost-effective line-cutting in multiple patterning lithography

Frederick Chen, Wei-Su Chen, Ming-Jinn Tsai, Tzu-Kun Ku

Proceedings Volume 8326, 83262L (2012) https://doi.org/10.1117/12.912800

KEYWORDS: Optical lithography, Electron beam lithography, Lithography, Extreme ultraviolet lithography, Etching, Photomasks, Extreme ultraviolet, Double patterning technology, Immersion lithography, Directed self assembly

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Proceedings Article | 6 December 2004 Paper

EUVL mask patterning with blanks from commercial suppliers

Pei-Yang Yan, Guojing Zhang, Rajesh Nagpal, Emily Shu, Chaoyang Li, Ping Qu, Frederick Chen

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569329

KEYWORDS: Extreme ultraviolet lithography, Reflectivity, Photomasks, Optical lithography, Ruthenium, Etching, Inspection, Chromium, Coating, Scanning electron microscopy

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Proceedings Article | 16 June 2003 Paper

Asymmetry and thickness effects in reflective EUV masks

Frederick Chen

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.483602

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Reflectivity, Multilayers, Extreme ultraviolet, Diffraction, Critical dimension metrology, Polarization, Absorption, Lithography

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Proceedings Article | 27 December 2002 Paper

Polarizing assist features for high-NA optical lithography

Frederick Chen

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467249

KEYWORDS: Polarization, Photomasks, Optical lithography, Phase shifts, Resolution enhancement technologies, Absorption, Chromium, Lithography, Semiconducting wafers, Binary data

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Proceedings Article | 18 December 1998 Paper

Impact of the loading effect on CD control in plasma etching of Cr photomasks using ZEP 7000 resist

Frederick Chen, Wilman Tsai, Scott Chegwidden, S. Yu, Marilyn Kamna, Jeff Farnsworth, Thomas Coleman

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332864

KEYWORDS: Etching, Plasma etching, Plasma, Chromium, Photomasks, Critical dimension metrology, Standards development, Metals, Reactive ion etching, Diffractive optical elements

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Proceedings Article | 1 September 1998 Paper

Plasma etch of AZ5206/Cr and ZEP7000/Cr for 0.18- to 0.25-um-generation advanced mask fabrication

Wilman Tsai, Frederick Chen, Marilyn Kamna, Scott Chegwidden, Steven Labovitz, Jeff Farnsworth, Giang Dao

Proceedings Volume 3412, (1998) https://doi.org/10.1117/12.328796

KEYWORDS: Plasma etching, Etching, Plasma, Wet etching, Critical dimension metrology, Chromium, Optical proximity correction, Photomasks, Mask making, Magnesium

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Showing 5 of 12 publications

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