We have been developing the technology that enables us to grow high quality and large GaN single crystals for
producing high quality GaN single crystal substrates using Na flux method. In 2005, we have succeeded in the growth of
2-inch GaN substrates with low dislocation density (< 105 cm-2) by applying the Liquid Phase Epitaxy to the Na flux
method. Recently, we reported that dislocation density lower than the order of 104 cm-2 and the growth rate more than 20 um/h is
achievable in the Na flux LPE. This achievement was due to introducing some new techniques; such as thermal
convection, mechanical stirring, addition of carbon additive, development of new growth apparatus and so on, to the Na
flux LPE.
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