In this presentation, we propose an effective scattering-potential approach for treating interface-roughness scattering of moving electrons in a superlattice structure. Based on obtained effective scattering potentials, we further derive a generalized Boltzmann transport equation by including a self-consistent internal scattering force. In addition, we solve this equation exactly beyond the relaxation-time approximation, and meanwhile, analyze the dependence of conduction current on interface-roughness parameters at various temperatures and DC electric fiield strengths. Finally, we reveal a microscopic mechanism associated with non-ohmic transport behavior by analyzing features in steady-state non-equilibrium electron occupation function and its dependence on interface roughness parameters.
The defect corrections to the polarization and dielectric functions of conduction electrons in a quantum well are first calculated. Following this, we derive the first two moment equations from the semi-classical Boltzmann transport theory and apply them to explore defect effects on magneto-transport of electrons. In addition, we obtain analytically momentum-relaxation time and mobility tensor of electrons by using the defect-corrected polarization function. Based on quantum-statistical theory, we further investigate the defect capture and charging dynamics by employing a hydrogen-like quantum-mechanics model for point defects and going beyond a short-range δ-function for their probability functions. Finally, both the capture and relaxation rates, as well as the density for captured electrons, are studied as functions of temperature, subband-electron density and different types of defects, which can be utilized for quantifying burst noise in transistors and blinking noise in photo-detectors.
The valley-dependent skew scattering of conduction electrons by impurities in two-dimensional α-T3 materials is studied. The interplay of Lorentz and Berry forces, which act on mobile electrons in position and momentum spaces respectively, is quantified. Interactions of electrons with ionized impurities at two valleys are observed in different scattering directions. Both the zeroand first-order Boltzmann moment equations are used for calculating scattering-angle distributions of resulting skew currents, which are significantly enhanced by introducing microscopic inverse energy- and momentum-relaxation times to two moment equations.
The effects of lattice point defects on the absorption of incident photons in a single-quantum-well
system are investigated by using a quantum-statistical theory. Our self-consistent theoretical
model includes the defect-induced vertex correction to an unscreened dynamical polarization
function of doped electrons under the ladder approximation. Meanwhile, the intralayer dynamical
screening to the Coulomb interaction between charged point defects and conduction
electrons are also taken into account within the random-phase approximation. The numerical
results for nonlinear variations in absorption spectra by defects are demonstrated and analyzed
for various defect densities. The combination of the current theory with a space-weather forecast
model will enable novel designs of satellite onboard electronic and optoelectronic devices with
radiation-hardening protection and extended lifetimes. More specifically, this theory facilitates
a better characterization of photodetectors not only for high quantum efficiency and low dark
current density but also for radiation tolerance or mitigation of radiation damage.
The electromagnetic coupling of surface-plasmon-polariton (SPP) modes, which are localized around the surface of a conductive substrate, to quantum plasmons in a graphene sheet above the surface is investigated and their hybrid quantum-plasmon modes are analyzed. For a double-layer graphene structure, on the other hand, the interplay between the electromagnetic couplings of SPPs to each graphene sheet is explored. An effective- polarizability tensor for a combined system, including coupled double-layer graphene and conductive substrate, has been derived, which consists of the retarded nonlocal Coulomb interactions between electrons in different graphene sheets and the conductive substrate. Additionally, this calculated effective-scattering tensor can be used for constructing an effective-medium theory to study optical properties of inserted nanorods between the graphene sheets and metallic surface.
The possibility for controlling both the probe-field optical gain and absorption switching as well as photon
conversion by a surface-plasmon-polariton near field is explored for a quantum dot located above a metal surface.
In contrast to the linear response in the weak-coupling regime, the obtained spectra could show an induced optical
gain and a triply-split spontaneous emission peak resulting from the interference between the surface-plasmon
field and the probe or self-emitted light field in such a strongly-coupled nonlinear system.
We have formulated a theory for investigating the conditions which are required to achieve entangled states
of electrons on graphene and three-dimensional (3D) topological insulators (TIs). We consider the quantum
entanglement of spins by calculating the exchange energy. A gap is opened up at the Fermi level between the
valence and conduction bands in the absence of doping when graphene as well as 3D TIs are irradiated with
circularly-polarized light. This energy band gap is dependent on the intensity and frequency of the applied
electromagnetic field. The electron-photon coupling also gives rise to a unique energy dispersion of the dressed
states which is different from either graphene or the conventional two-dimensional electron gas (2DEG). In our
calculations, we obtained the dynamical polarization function for imaginary frequencies which is then employed to
determine the exchange energy. The polarization function is obtained with the use of both the energy eigenstates
and the overlap of pseudo-spin wave functions. We have concluded that while doping has a significant influence
on the exchange energy and consequently on the entanglement, the gap of the energy dispersions affects the
exchange slightly, which could be used as a good technique to tune and control entanglement for quantum
information purposes.
We have formulated a theory to help us investigate the conditions which are needed to achieve stronger plasmon
instability leading to emission in the terahertz (THz) regime for semiconductor quantum wells (QWs). The
surface response function is calculated for a bilayer two-dimensional electron gas (2DEG) system in the presence
of a metal grating placed on the surface which modulates the electron density. The 2DEG layers are coupled
to surface plasmons arising from excitations of free carriers in the bulk region between the layers. A current is
passed through one of the 2DEG layers and is characterized by a drift velocity υD. With the use of the surface
response function, the plasmon dispersion equation is obtained as a function of frequency ω, the in-plane wave
vector qll = (qx, qy) and reciprocal lattice vector nG where n = 0,±1,±2, ... with G = 2π/d and d denoting the
period of the grating. The dispersion equation, which yields the resonant frequencies, is solved in the complex
ω-plane for real wave vector qll. It is ascertained that the imaginary part of ω is enhanced with decreasing d,
and with increasing the doping density of the free carriers in the bulk medium for fixed grating period.
We develop a dual-charged-fluid model is to explore the surface-acoustic-wave (SAW) dragged photocurrents
of one-dimensional (1D) confined-state carriers in a steady state. The proposed model takes into account the
quantum confi;nement, the tunneling escape of SAW-dragged 1D carriers, the inelastic capture of two-dimensional
continuous-state carriers and the induced self-consistent space-charge field. The numerical results demonstrate
a high optical gain due to suppressed recombination of 1D carriers in a region between an absorption strip
and a surface gate. Using a discrete model, we calculate the responsivity for the SAW-dragged photocurrent
in a quantum well as functions of the gate voltage, photon flux, SAW power and frequency and temperature,
respectively. A high responsivity (~103 Amp/Watt) is shown for high gate voltages and SAW powers, as well as
for low photon fluxes and SAW frequencies.
Carbon nanotubes have come under intense theoretical and experimental investigation focused on both their transport and photonic properties. Of recent interest is the observation that when a gate voltage is applied perpendicular to the axis of the nanotube, it can lead to spin-orbit interaction (SOI). This is of the same nature as the Rashba-Bychkov SOI at an asymmetric semiconductor heterojunction. We have calculated the "band states" for a cylindrical nanotube in the presence of SOI and then used the results to determine the collective plasma oscillations corresponding to electron transitions between the spin-split subbands for single-wall and multiwall nanotubes. These collective plasma modes determine the peak positions for the intersubband absorption coefficient as well as the energy loss spectrum. We show that the plasmon excitations for coaxial tubules have a region of instability which could lead to amplification in the energy transfer spectrum. The frequency regime where this instability occurs could be in the terahertz range. This source of radiation may be suitable for use in space-based detectors because of the durability and robustnes of carbon nanotubes.
The recent developments in the experimental realization of
quasi-one-dimensional (1D) systems
exhibit many interesting features. These include current quantization
which has the potential application for a current standard as well as quantum
information and security schemes. In this paper, we investigate
the effect of spin-orbit interaction (SOI) on the energy levels
of electrons confined to quantum dots on the surface of
nanotubes. The radius of a nanotube is a few nanometers and is quasi-1D.
The energy levels play a crucial role in determining the electron transport
properties.The SOI may arise from the electrostatic confining potential
due to gates applied perpendicular to the axis of the nanotube.
The quantum computation scheme which we are suggesting consists
of a nano-circuit of nanotubes on which electrons are
confined within dots. The qubit operation is based on the
exchange interaction between a pair of spins occupying states
within the quantum dots. We employ a simple model for the
electron confinement to obtain the energy eigenstates.
Our simplified calculation was able
to show that the SOI splits the energy levels which are then used
to obtain the exchange energy of a pair of spins with the
s-wave Heitler-London approach. We calculate the exchange
energy of the entangled electrons on a pair of coaxial
and parallel nanotubes as a function of separation
between the nanotubes and show that the SOI enhances the entanglement.
We investigate the entanglement of spins for two electrons
contributing to the acoustoelectric current driven by a surface
acoustic wave (SAW) in two adjacent narrow channels by calculating
their exchange energy (J). Our calculations are done in the s
wave Heitler-London approach, as well as by taking the difference
between the energies of the singlet and triplet states which
we obtain by solving the Schrodinger equation in the adiabatic
approximation. We also calculate the leakage of the electrons
from the lowest states in which they are prepared to excited
states within the moving quantum dots. The leakage from the ground state
is also calculated when an electron is launched in a channel which is then split into
two adjacent channels by gates.
The electromodulation method of contactless electroreflectance has been used to characterize strained-layer, modulation-doped Ga1-yAlyAs/InxAs/GaAs quantum wells that contain a 2DEG. Measurements were made over a wide temperature range. A first- principles many-body lineshape model has been developed. We find that manu-body effects play a role at all temperatures, but they are most pronounced at lower temperatures. The thermal broadening of the lineshape of the peaks corresponding to the interband transitions depends sensitively on the Fermi energy EF and the temperature, thereby providing us with a method to determine EF from a detailed lineshape fit. The electron density n2D is in good agreement with the sheet densities obtained from low-temperature Hall measurements. The variations in the quantum well width, alloy composition, and symmetry have been characterized by fitting the lineshapes with appropriate fitting parameters.
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