Films of Ge1-xSnx have been grown on Ge, Si, and Al2O3 substrates by remote plasmaenhanced chemical vapor deposition with Sn concentrations greater than 10% and thicknesses greater than 1 μm. Characterization data of the structural, optical, and electrical properties of these alloys are presented. Device characteristics from planar photoconductor and vertical p-n devices grown directly on Si substrates show promise for future MWIR sensing applications.
The plasmonic resonance wavelength λres in ZnO doped with 3 wt.% Ga2O3 can be controlled over the range 1 to 4 μm by simple furnace annealing in flowing Ar. For each annealing temperature TA, the reflectance Rm and transmittance Tm are measured over a wavelength range, λ=185 to 3200 nm, (energy range, E=6.7 to 0.387 eV), and the reflectance coefficient R is calculated from Rm and Tm. The value of λres is then determined from a Drude-theory analysis of R versus E that yields fitting parameters nopt (optical carrier concentration), μopt (optical mobility), high-frequency dielectric constant ϵ∞, and thickness d at each annealing temperature TA. The validity of this process is confirmed by comparison of ϵ∞ with literature values and comparison of nopt and μopt with analogous quantities n and μH measured by the Hall effect.
Electrodynamic properties of fluorine-doped tin oxide films grown by aqueous-spray-based heterogeneous reaction on heated hydrophilic substrates were investigated with emphasis on applications to infrared plasmonics. These properties were correlated with physical ones such as crystallinity, dopant and electron concentrations, conductivity, and mobility. The degree of crystallinity for the nanocrystalline films increases with F concentration and growth temperature. The F concentration in the films is proportional to that in the starting solution. Electron concentration and Hall mobility rise more slowly with F concentration. At their highest, both F and electron concentrations are ∼2% of the Sn concentration. In more lightly doped films, the electron concentration significantly exceeds the F concentration. The achieved resistivity of the doped films is lower than for undoped SnO2 film by 20 to 750 times. The infrared complex permittivity spectrum shows a shift in plasma wavelength from 15 to 2 μm with more than two orders increase in F concentration.
The plasmonic resonance wavelength λres in ZnO doped with 3wt%Ga2O3 can be controlled over the range 1 – 4 μm by simple furnace annealing in flowing Ar. For each annealing temperature TA, the reflectance Rm and transmittance Tm are measured over a wavelength range, λ = 185 – 3200 nm, (energy range, E = 6.7 – 0.387 eV), and the reflectance coefficient R is calculated from Rm and Tm. The value of λres is then determined from a Drude-theory analysis of R vs E that yields fitting parameters nopt (optical carrier concentration), μopt (optical mobility), high-frequency dielectric constant ε∞, and thickness d, at each annealing temperature TA. The validity of this process is confirmed by comparison of ε∞ with literature values, and comparison of nopt and μopt with analogous quantities n and μH measured by the Hall-effect.
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