Mr. Guo-Tsai Huang Profile

Guo-Tsai Huang

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Publications (13)

Proceedings Article | 26 March 2019 Presentation + Paper

Color mixing in overlay metrology for greater accuracy and robustness

Simon Mathijssen, Marc Noot, Murat Bozkurt, Narjes Javaheri, Reza Hajiahmadi, Antonios Zagaris, Ken Chang, Benny Gosali, Eason Su, Cathy Wang, Arie den Boef, Kaustuve Bhattacharyya, Guo-Tsai Huang, Kai-Hsiung Chen, John Lin

Proceedings Volume 10959, 109591G (2019) https://doi.org/10.1117/12.2514949

KEYWORDS: Overlay metrology, Semiconducting wafers, Diffraction gratings, Scanning electron microscopy, Diffraction, Etching, Target detection, Sensors, Metrology, Switching

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Proceedings Article | 13 March 2018 Presentation + Paper

Multi-wavelength approach towards on-product overlay accuracy and robustness

Kaustuve Bhattacharyya, Marc Noot, Hammer Chang, Sax Liao, Ken Chang, Benny Gosali, Eason Su, Cathy Wang, Arie den Boef, Christophe Fouquet, Guo-Tsai Huang, Kai-Hsiung Chen, Kevin Cheng, John Lin

Proceedings Volume 10585, 105851F (2018) https://doi.org/10.1117/12.2297420

KEYWORDS: Overlay metrology, Semiconducting wafers, Etching, Polarization, Metrology, Scanning electron microscopy, Physics, Signal processing, Monte Carlo methods, Semiconductor manufacturing

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Proceedings Article | 28 March 2017 Paper

Application of advanced diffraction based optical metrology overlay capabilities for high-volume manufacturing

Kai-Hsiung Chen, Guo-Tsai Huang, Hung-Chih Hsieh, Wei-Feng Ni, S. M. Chuang, T. K. Chuang, Chih-Ming Ke, Jacky Huang, Shiuan-An Rao, Aysegul Cumurcu Gysen, Maxime d'Alfonso, Jenny Yueh, Pavel Izikson, Aileen Soco, Jon Wu, Tjitte Nooitgedagt, Jeroen Ottens, Yong Ho Kim, Martin Ebert

Proceedings Volume 10145, 1014528 (2017) https://doi.org/10.1117/12.2257894

KEYWORDS: Overlay metrology, Metrology, High volume manufacturing, Scatterometry, Diffraction, Optical metrology, Lithography, Process control, Optical lithography, Time metrology, Image registration, Target acquisition, Semiconducting wafers

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Proceedings Article | 28 March 2017 Presentation + Paper

A complete methodology towards accuracy and lot-to-lot robustness in on-product overlay metrology using flexible wavelength selection

Kaustuve Bhattacharyya, Arie den Boef, Marc Noot, Omer Adam, Grzegorz Grzela, Andreas Fuchs, Martin Jak, Sax Liao, Ken Chang, Vincent Couraudon, Eason Su, Wilson Tzeng, Cathy Wang, Christophe Fouquet, Guo-Tsai Huang, Kai-Hsiung Chen, Y. C. Wang, Kevin Cheng, Chih-Ming Ke, L. G. Terng

Proceedings Volume 10145, 101450A (2017) https://doi.org/10.1117/12.2257662

KEYWORDS: Overlay metrology, Polarization, Semiconducting wafers, Defense systems, Process control, Wafer-level optics, Diffraction gratings, Solids, Metrology, Image quality, Target detection, Detection and tracking algorithms, Diffraction, Thin films

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Proceedings Article | 2 April 2014 Paper

Improving on-product performance at litho using integrated diffraction-based metrology and computationally designed device-like targets fit for advanced technologies (incl. FinFET)

Kai-Hsiung Chen, GT Huang, KS Chen, C. Hsieh, YC Chen, CM Ke, TS Gau, YC Ku, Kaustuve Bhattacharyya, Jacky Huang, Arie den Boef, Maurits v. d. Schaar, Martijn Maassen, Reinder Plug, Youping Zhang, Steffen Meyer, Martijn van Veen, Chris de Ruiter, Jon Wu, Hua Xu, Tatung Chow, Charlie Chen, Eric Verhoeven, Pu Li, Paul Hinnen, Greet Storms, Kelvin Pao, Gary Zhang, Christophe Fouquet, Takuya Mori

Proceedings Volume 9050, 90500S (2014) https://doi.org/10.1117/12.2047098

KEYWORDS: Overlay metrology, Metrology, Semiconducting wafers, Back end of line, Scanners, Diffraction, Front end of line, Process control, Etching

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Proceedings Article | 13 May 2013 Paper

Sub-nanometer in-die overlay metrology: measurement and simulation at the edge of finiteness

Henk-Jan Smilde, Martin Jak, Arie den Boef, Mark van Schijndel, Murat Bozkurt, Andreas Fuchs, Maurits van der Schaar, Steffen Meyer, Stephen Morgan, Kaustuve Bhattacharyya, Guo-Tsai Huang, Chih-Ming Ke, Kai-Hsiung Chen

Proceedings Volume 8788, 87881N (2013) https://doi.org/10.1117/12.2020930

KEYWORDS: Overlay metrology, Metrology, Diffraction gratings, Diffraction, Semiconducting wafers, Sensors, Semiconductors, Environmental sensing, Wafer-level optics, Geometrical optics

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Proceedings Article | 10 April 2013 Paper

On-product overlay enhancement using advanced litho-cluster control based on integrated metrology, ultra-small DBO targets and novel corrections

Kaustuve Bhattacharyya, Chih-Ming Ke, Guo-Tsai Huang, Kai-Hsiung Chen, Henk-Jan Smilde, Andreas Fuchs, Martin Jak, Mark van Schijndel, Murat Bozkurt, Maurits van der Schaar, Steffen Meyer, Miranda Un, Stephen Morgan, Jon Wu, Vincent Tsai, Frida Liang, Arie den Boef, Peter ten Berge, Michael Kubis, Cathy Wang, Christophe Fouquet, L. Terng, David Hwang, Kevin Cheng, TS Gau, Y. C. Ku

Proceedings Volume 8681, 868104 (2013) https://doi.org/10.1117/12.2011878

KEYWORDS: Overlay metrology, Metrology, Semiconducting wafers, Time metrology, Chemical mechanical planarization, Scanners, Diffraction, Thin film coatings, Tin, High volume manufacturing

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Proceedings Article | 3 April 2012 Paper

Evaluation of a novel ultra small target technology supporting on-product overlay measurements

Henk-Jan Smilde, Arie den Boef, Michael Kubis, Martin Jak, Mark van Schijndel, Andreas Fuchs, Maurits van der Schaar, Steffen Meyer, Stephen Morgan, Jon Wu, Vincent Tsai, Cathy Wang, Kaustuve Bhattacharyya, Kai-Hsiung Chen, Guo-Tsai Huang, Chih-Ming Ke, Jacky Huang

Proceedings Volume 8324, 83241A (2012) https://doi.org/10.1117/12.916382

KEYWORDS: Overlay metrology, Semiconducting wafers, Metrology, Diffraction gratings, Diffraction, Standards development, Reticles, Lithography, Scatterometry, Physics

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Proceedings Article | 20 April 2011 Paper

Accuracy of diffraction-based and image-based overlay

Chih-Ming Ke, Guo-Tsai Huang, Jacky Huang, Rita Lee

Proceedings Volume 7971, 79711E (2011) https://doi.org/10.1117/12.880037

KEYWORDS: Overlay metrology, Semiconducting wafers, Metrology, Critical dimension metrology, Transmission electron microscopy, Lithography, Scanners, Light sources, Very large scale integration, Electron microscopes

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There is no overlay standard in the world. For critical dimension (CD), we may use the VLSI standard or programmed pitch offsets to determine the CD accuracy or CD sensitivity. Programmed overlay offsets can provide relatively accurate sub-nanometer level overlay splits but it is only on a single layer and does not contain layer-to-layer process variations. The splits of scanner magnification can check the trend of overlay sensitivity but it cannot provide the exact value of overlay offsets. Transmission electron microscopes (TEM) can be used as a final overly error verification tool. However, TEM sample preparation for after-development-inspection (ADI) will introduce even more sample distortion errors. Therefore, unlike CD metrology, there is no clean and systematic way to verify the accuracy of overlay metrology. These technical barriers necessitate matching diffraction-based overlay and image-based overlay, especially for sub-nanometer point-to-point matching requirement. In this paper, we compare the correlation of ADI to after-etch-inspection (AEI) by using image-based box-in-box overlay measurement and diffraction-based overlay measurement on the same wafer. The ADI-to-AEI overlay data consistency plays a key role for lithography overlay APC success and AEI overlay should be treated as the final standard for overlay accuracy. We found that process-induced asymmetric profiles of overlay marks will lead to ADI-to-AEI overlay bias. This bias is proportional to the degree of profile asymmetry and different color/wavelength have different sensitivity to this ADI-to-AEI bias. Our experimental results show that the ADI-to-AEI overlay data bias can indeed be significantly improved by selecting the color/wavelength with minimum sensitivity to the asymmetry profile. These results make us believe that overlay metrology recipe setup is quite critical no matter for image-based overlay or diffraction-based overlay. Otherwise, problematic overlay data will be taken into APC feedback loop and lead to wrong overlay correction.

Proceedings Article | 20 April 2011 Paper

Overlay and focus stability control for 28-nm nodes on immersion scanners

Guo-Tsai Huang, Kai-Hsiung Chen, Li-Jui Chen, Tsai-Sheng Gau, Reiner Jungblut, Albert Chen, Ethan Lee, Lester Wang, Miranda Un, Wei-Shun Tzeng, Jim Chen, Spencer Lin, Jon Wu

Proceedings Volume 7971, 79711M (2011) https://doi.org/10.1117/12.879055

KEYWORDS: Scanners, Semiconducting wafers, Metrology, Overlay metrology, Feedback control, Lithography, Finite element methods, Control systems, Scatterometry, Data modeling

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Proceedings Article | 29 March 2011 Paper

Mask registration impact on intrafield on-wafer overlay performance

Guo-Tsai Huang, Alex Chen, Tung-Yaw Kang, S. C. Lee, Frank Laske, Klaus-Dieter Roethe, DongSub Choi, Chiang Reinhart, John Robinson, You Seung Jin, Lin Chua, David Tien, Venkat Nagaswami

Proceedings Volume 7971, 797106 (2011) https://doi.org/10.1117/12.879485

KEYWORDS: Photomasks, Semiconducting wafers, Overlay metrology, Scanners, Image registration, Error analysis, Optical lithography, Lithography, Double patterning technology, Reticles

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Proceedings Article | 2 April 2010 Paper

A paradigm shift in scatterometry-based metrology solution addressing the most stringent needs of today as well as future lithography

C. Ke, Victor Shih, Jacky Huang, L. Chen, Willie Wang, G. Huang, W. Yang, Sophia Wang, C. Liang, H. Liu, H. Lee, L. Terng, T. Gau, John Lin, Kaustuve Bhattacharyya, Maurits van der Schaar, Noelle Wright, Marc Noot, Mir Shahrjerdy, Vivien Wang, Spencer Lin, Jon Wu, Sophie Peng, Gavin Liu, Wei-Shun Tzeng, Jim Chen, Andreas Fuchs, Omer Adam, Cathy Wang

Proceedings Volume 7638, 76383P (2010) https://doi.org/10.1117/12.853318

KEYWORDS: Overlay metrology, Metrology, Semiconducting wafers, Scanners, Back end of line, Lithography, 3D metrology, Finite element methods, Scatterometry, Critical dimension metrology

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Proceedings Article | 11 December 2009 Paper

A sophisticated metrology solution for advanced lithography: addressing the most stringent needs of today as well as future lithography

Victor Shih, Jacky Huang, Willie Wang, G. T. Huang, H. L. Chung, Alan Ho, W. T. Yang, Sophia Wang, Chih-Ming Ke, L. J. Chen, C. R. Liang, H. H. Liu, H. J. Lee, L. G. Terng, T. S. Gau, John Lin, Kaustuve Bhattacharyya, Maurits van der Schaar, Noelle Wright, Mir Shahrjerdy, Vivien Wang, Spencer Lin, Jon Wu, Sophie Peng, Dennis Chang, Cathy Wang, Andreas Fuchs, Omer Adam, Karel van der Mast

Proceedings Volume 7520, 75201A (2009) https://doi.org/10.1117/12.837353

KEYWORDS: Overlay metrology, Semiconducting wafers, Metrology, Scanners, Lithography, Back end of line, Metals, Scatterometry, Front end of line, Signal to noise ratio

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Showing 5 of 13 publications

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