Dr. Hakseung Han Profile

Dr. Hakseung Han

at Samsung Electronics Co Ltd

SPIE Involvement:

Author

Publications (25)

Proceedings Article | 12 November 2024 Presentation + Paper

Effective medium approximation for EUV multilayer intermixing

Seulki Roh, Taewon Go, Chungik Oh, Hanjune Yoon, Hakseung Han, Sanghee Lee

Proceedings Volume 13216, 132160A (2024) https://doi.org/10.1117/12.3034567

KEYWORDS: Silicon, Molybdenum, Extreme ultraviolet, Reflection, Data modeling, Refraction, Transmission electron microscopy, Reflectivity, Interfaces, Ruthenium

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Proceedings Article | 26 August 2024 Paper

EUV mask inspection technologies with actinic tool for DRAM and logic lithography

Cheolki Min, Daeho Sung, Jeongmin Kim, Hongcheol Kim, Sobin Ji, Hakseung Han, Jonggul Doh, Inyong Kang, Jin Choi, Sanghee Lee, Satoru Doi, Toshiyuki Todoroki, Hiroki Miyai, Jaehee Han, Youngsub Jang

Proceedings Volume 13177, 131770P (2024) https://doi.org/10.1117/12.3031837

KEYWORDS: Inspection, Extreme ultraviolet, Deep ultraviolet, Pellicles, Optical proximity correction, Logic, SRAF, Lithography, Image resolution, Defect inspection

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Proceedings Article | 5 October 2016 Paper

Registration performance on EUV masks using high-resolution registration metrology

Steffen Steinert, Hans-Michael Solowan, Jinback Park, Hakseung Han, Dirk Beyer, Thomas Scherübl

Proceedings Volume 9985, 99851W (2016) https://doi.org/10.1117/12.2241498

KEYWORDS: Extreme ultraviolet, Photomasks, Metrology, Image registration, Overlay metrology, Deep ultraviolet, Reticles, Databases, Calibration, Lithography

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Proceedings Article | 10 May 2016 Paper

The study on quantifiable analysis for complex OPCed patterns based on Mask CD SEM contour information

Won Joo Park, Hyung-Joo Lee, Yoon Taek Han, Seuk Hwan Choi, Hak Seung Han, Dong Hoon Chung, Chan-Uk Jeon, Yoshiaki Ogiso, Soichi Shida, Jun Matsumoto, Takayuki Nakamura

Proceedings Volume 9984, 998407 (2016) https://doi.org/10.1117/12.2242496

KEYWORDS: Scanning electron microscopy, Photomasks, Critical dimension metrology, Metrology, Image processing, Statistical analysis, Image quality, Neodymium, Semiconductors, Optical proximity correction

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Proceedings Article | 16 September 2014 Paper

Automated hotspot analysis with aerial image CD metrology for advanced logic devices

Ute Buttgereit, Thomas Trautzsch, Min-ho Kim, Jung-Uk Seo, Young-Keun Yoon, Hak-Seung Han, Dong Hoon Chung, Chan-Uk Jeon, Gary Meyers

Proceedings Volume 9235, 92350B (2014) https://doi.org/10.1117/12.2065937

KEYWORDS: Computed tomography, Image processing, Critical dimension metrology, Logic devices, Optical proximity correction, Image analysis, Photomasks, Metrology, Logic, Printing

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Proceedings Article | 27 May 2009 Paper

EUV actinic defect inspection and defect printability at the sub-32-nm half-pitch

Sungmin Huh, Patrick Kearney, Stefan Wurm, Frank Goodwin, Hakseung Han, Kenneth Goldberg, Iacopo Mochi, Eric Gullikson

Proceedings Volume 7470, 74700Y (2009) https://doi.org/10.1117/12.835196

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet, Defect inspection, Reticles, Extreme ultraviolet lithography, Multilayers, Deep ultraviolet, Semiconducting wafers, Critical dimension metrology

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Proceedings Article | 18 March 2009 Paper

Characteristics and issues of an EUVL mask applying phase-shifting thinner absorber for device fabrication

Hwan-Seok Seo, Dong-Gun Lee, Byung-Sup Ahn, Hakseung Han, Sungmin Huh, In-Yong Kang, Hoon Kim, Dongwan Kim, Seong-Sue Kim, Han-Ku Cho

Proceedings Volume 7271, 72710D (2009) https://doi.org/10.1117/12.813932

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Nanoimprint lithography, Silicon, Semiconducting wafers, Ruthenium, Extreme ultraviolet, Reflectivity, Phase shifts, Refractive index

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Proceedings Article | 17 October 2008 Paper

Benchmarking EUV mask inspection beyond 0.25 NA

Kenneth Goldberg, Iacopo Mochi, Patrick Naulleau, Hakseung Han, Sungmin Huh

Proceedings Volume 7122, 71222E (2008) https://doi.org/10.1117/12.801529

KEYWORDS: Photomasks, Extreme ultraviolet, Monochromatic aberrations, Inspection, Imaging systems, Contrast transfer function, Extreme ultraviolet lithography, Mirrors, Optical alignment, CCD cameras

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Proceedings Article | 17 October 2008 Paper

Analysis of process margin in EUV mask repair with nano-machining

Su-Young Lee, Geun-Bae Kim, Hong-Seok Sim, Sang-Hyeon Lee, Hwa-Sung Kim, Jung-Hwan Lee, Hwan-Seok Seo, Hak-Seung Han, Seong-Sue Kim, Seong-Yong Moon, Sang-Gyun Woo, Ron Bozak, Andrew Dinsdale, Tod Robinson, David Lee, HanKu Cho

Proceedings Volume 7122, 71222I (2008) https://doi.org/10.1117/12.801415

KEYWORDS: Photomasks, Extreme ultraviolet, Error analysis, Extreme ultraviolet lithography, Scanning electron microscopy, Semiconducting wafers, Diffractive optical elements, Image processing, Critical dimension metrology, Factor analysis

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Proceedings Article | 2 May 2008 Paper

EUV blank inspection

J. Peters, C. Tonk, D. Spriegel, Hak-Seung Han, Wonil Cho, Stefan Wurm

Proceedings Volume 6792, 67920F (2008) https://doi.org/10.1117/12.798594

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Printing, Defect detection, Particles, Quartz, Signal detection, Data centers, Defect inspection

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Proceedings Article | 21 March 2008 Paper

EUV mask reflectivity measurements with micron-scale spatial resolution

Kenneth Goldberg, Senajith Rekawa, Charles Kemp, Anton Barty, Erik Anderson, Patrick Kearney, Hakseung Han

Proceedings Volume 6921, 69213U (2008) https://doi.org/10.1117/12.772971

KEYWORDS: Reflectivity, Inspection, Photomasks, Extreme ultraviolet, Scanning electron microscopy, Signal detection, Signal to noise ratio, Contamination, Optical filters, Extreme ultraviolet lithography

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Proceedings Article | 21 March 2008 Paper

Determining the critical size of EUV mask substrate defects

Hakseung Han, Wonil Cho, Kenneth Goldberg, Eric Gullikson, Chan-Uk Jeon, Stefan Wurm

Proceedings Volume 6921, 69211Y (2008) https://doi.org/10.1117/12.772590

KEYWORDS: Photomasks, Critical dimension metrology, Extreme ultraviolet lithography, Extreme ultraviolet, Semiconducting wafers, Charge-coupled devices, Inspection, Lithography, Scanners, Line width roughness

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Proceedings Article | 16 November 2007 Paper

Detectability and printability of EUVL mask blank defects for the 32-nm HP node

Wonil Cho, Hak-Seung Han, Kenneth Goldberg, Patrick Kearney, Chan-Uk Jeon

Proceedings Volume 6730, 673013 (2007) https://doi.org/10.1117/12.746698

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet lithography, Semiconducting wafers, Defect detection, Critical dimension metrology, Extreme ultraviolet, Reflectivity, Manufacturing, Line width roughness

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Proceedings Article | 30 October 2007 Paper

Performance of actinic EUVL mask imaging using a zoneplate microscope

Kenneth Goldberg, Patrick Naulleau, Anton Barty, Senajith Rekawa, Charles Kemp, Robert Gunion, Farhad Salmassi, Eric Gullikson, Erik Anderson, Hak-Seung Han

Proceedings Volume 6730, 67305E (2007) https://doi.org/10.1117/12.746756

KEYWORDS: Photomasks, Monochromatic aberrations, Semiconducting wafers, Extreme ultraviolet, Contrast transfer function, Extreme ultraviolet lithography, Inspection, Reflectivity, Microscopes, Charge-coupled devices

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Proceedings Article | 15 May 2007 Paper

EUV mask blank defect inspection strategies for 32-nm half-pitch and beyond

Stefan Wurm, Hakseung Han, Patrick Kearney, Wonil Cho, Chan-Uk Jeon, Eric Gullikson

Proceedings Volume 6607, 66073A (2007) https://doi.org/10.1117/12.729029

KEYWORDS: Inspection, Photomasks, Defect inspection, Extreme ultraviolet, Extreme ultraviolet lithography, Visible radiation, Printing, Wafer inspection, Mask making, Manufacturing

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Proceedings Article | 3 May 2007 Paper

EUV mask infrastructure challenges

Stefan Wurm, Phil Seidel, Chris Van Peski, Long He, Hakseung Han, Pat Kearney, Wonil Cho

Proceedings Volume 6533, 65330Z (2007) https://doi.org/10.1117/12.737154

KEYWORDS: Photomasks, Extreme ultraviolet, Inspection, Reticles, Defect inspection, Extreme ultraviolet lithography, Manufacturing, Semiconducting wafers, Standards development, Printing

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Proceedings Article | 29 March 2007 Paper

EUV MET printing and actinic imaging analysis on the effects of phase defects on wafer CDs

Hakseung Han, Kenneth Goldberg, Anton Barty, Eric Gullikson, Yoshiaki Ikuta, Toshiyuki Uno, Obert Wood, Stefan Wurm

Proceedings Volume 6517, 65170B (2007) https://doi.org/10.1117/12.711166

KEYWORDS: Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography, Semiconducting wafers, Inspection, Printing, Critical dimension metrology, Multilayers, Ion beams, Atomic force microscopy

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Proceedings Article | 13 March 2007 Paper

EUV and non-EUV inspection of reticle defect repair sites

Kenneth Goldberg, Anton Barty, Phillip Seidel, Klaus Edinger, Rainer Fettig, Patrick Kearney, Hakseung Han, Obert Wood

Proceedings Volume 6517, 65170C (2007) https://doi.org/10.1117/12.712202

KEYWORDS: Extreme ultraviolet, Inspection, Reflectivity, Multilayers, Photomasks, Scattering, Signal attenuation, Light scattering, Scanning electron microscopy, Ultraviolet radiation

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Proceedings Article | 20 October 2006 Paper

Multilayer defects nucleated by substrate pits: a comparison of actinic inspection and non-actinic inspection techniques

A. Barty, K. Goldberg, P. Kearney, S. Rekawa, B. LaFontaine, O. Wood, J. Taylor, H.-S. Han

Proceedings Volume 6349, 63492M (2006) https://doi.org/10.1117/12.686742

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet, Reflectivity, Multilayers, Signal detection, Imaging systems, Coating, Defect detection, Printing

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Proceedings Article | 20 May 2006 Paper

Mask fabrication results using new laser writing system: Sigma7300

Ho-June Lee, Dong-Suk Nam, Sang-Hee Lee, Hyun-Soo Kim, Jung-Hoon Lee, Hak-Seung Han, Byung-Gook Kim, Seong-Woon Choi, Woo-Sung Han

Proceedings Volume 6283, 62831J (2006) https://doi.org/10.1117/12.681744

KEYWORDS: Photomasks, Particles, Inspection, Laser systems engineering, Mask making, SRAF, Printing, Semiconducting wafers, Light sources, Optical simulations

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Proceedings Article | 24 March 2006 Paper

Improved scatterometry method of critical dimension measurements and its application for control of development process

Irina Pundaleva, Dongseok Nam, Hakseung Han, Donggun Lee, Woosung Han

Proceedings Volume 6152, 61520G (2006) https://doi.org/10.1117/12.657324

KEYWORDS: Critical dimension metrology, Scatterometry, Spectroscopy, Process control, Diffraction, Diffraction gratings, Sensors, In situ metrology, Time metrology, Photomasks

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Proceedings Article | 9 November 2005 Paper

Analysis of various blur effects on mask CD distortion

Hak-Seung Han, Sang-Hee Lee, Byung-Gook Kim, Seong-Yong Moon, Sung Woon Choi, Woo-Sung Han

Proceedings Volume 5992, 59924V (2005) https://doi.org/10.1117/12.632268

KEYWORDS: Backscatter, Scattering, Electron beam lithography, Photomasks, Critical dimension metrology, Electrons, Distortion, Photoresist processing, Laser scattering, Lithography

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Proceedings Article | 9 November 2005 Paper

Improved modeling of fogging and loading effect correction

Sanghee Lee, Byunggook Kim, Hakseung Han, Dongseok Nam, Seongyong Moon, Seongwoon Choi, Woosung Han

Proceedings Volume 5992, 59924U (2005) https://doi.org/10.1117/12.632078

KEYWORDS: Etching, Critical dimension metrology, Modulation, Dry etching, Photomasks, System on a chip, Backscatter, Data modeling, Electron beams, Electron beam lithography

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Proceedings Article | 6 December 2004 Paper

Quantitative analysis of develop loading effect and its application

Hak-Seung Han, Se-Gun Moon, Je-Bum Yoon, Byung-Gook Kim, Seong-Yong Moon, Seong-Woon Choi, Woo-Sung Han

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569199

KEYWORDS: Fluctuations and noise, Critical dimension metrology, Photomasks, Photoresist processing, Quantitative analysis, Chemical analysis, Tolerancing, Electron beam lithography, Data conversion, Semiconductors

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Proceedings Article | 27 April 2001 Paper

Rare-earth-doped nanocrystalline silicon: excitation and de-excitation mechanisms and implications for waveguide amplifier applications

Se-Young Seo, Hak-Seung Han, Jung Shin, Dong Su Kim

Proceedings Volume 4282, (2001) https://doi.org/10.1117/12.424774

KEYWORDS: Erbium, Silicon, Luminescence, Neodymium, Ions, Waveguides, Excitons, Silicon films, Oxides, Amplifiers

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Showing 5 of 25 publications

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