Photoluminescence is one of the methods used for analyzing the optical characteristics of materials. For components
in solid-state lighting such as GaN-based LEDs, the use of an LED structure configuration on a patterned sapphire
substrate has shown to be highly effective in improving light-extraction efficiency. We proposed a compact and simple
photoluminescence measurement system based on fiber-optic probes that can be scanned over a 20 × 20 μm2 area with a
high spatial resolution. We applied the system in morphological study of InGaN/GaN epitaxial layers for LED
applications. With this system, we obtained peak intensity, peak wavelength, and full width at half maximum of the
emission spectrum.
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