Mr. Haoran Ma Profile

Haoran Ma

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Proceedings Article | 18 March 2024 Paper

Integrated 2D beam-steering scanner based on cross-bar structure

Maohui Li, Fanjie Ruan, Li’ao Ye, Haoran Ma, Yuehai Wang, Jianyi Yang

Proceedings Volume 13104, 131040M (2024) https://doi.org/10.1117/12.3021185

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With the advancements in technologies such as space optical communication, laser radar, and holographic projection, there has been an increasing demand for beam scanning devices that possess stronger seismic resistance, higher robustness, greater integration, and faster scanning speeds. Focal plane switch beam scanners based on silicon photonics integration technology offer the ability to achieve on-chip beam selection and off-chip scanning. These scanners provide advantages such as smaller size, faster scanning speeds, easier control of optical path selection, and a fully solid-state design without mechanical structures. In terms of scanning dimensions, they can be categorized into one-dimensional (θ) and two-dimensional (θ, φ) scans. Expanding the dimensionality is crucial in order to fulfill the system's functions more effectively. However, most on-chip two-dimensional beam scanners currently available impose higher demands on the light source and power consumption due to their reliance on wavelength tuning of the laser source for angle changes in the second dimension. Furthermore, the minimum control number for N switches is log2N. In this paper, we present a novel two-dimensional beam scanner structure that enables the two-dimensional beam scanning without wavelength tuning of the laser source. Moreover, the maximum control number for N switches in our proposed structure is only 2 for optical path control. The configuration of this structure employs a cross-bar design to achieve these goals. We experimentally verified the performance of a 4x6 array structure, which exhibits a far-field beam divergence angle of 0.06°, a field of view ranging from 4.12°x1.69°, and a background noise suppression of 12.29dB. This on-chip two-dimensional beam scanner offers a simpler structure, lower control complexity, lesser power consumption, and wider application prospects.

Proceedings Article | 21 December 2023 Paper

Photonic differentiator employing self-induced optical modulation effect

Li'ao Ye, Haoran Ma, Maohui Li, Fanjie Ruan, Jianyi Yang

Proceedings Volume 12966, 1296626 (2023) https://doi.org/10.1117/12.3007979

KEYWORDS: Silicon, Signal processing, Pulse signals, Microrings, Silicon photonics

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We propose and demonstrate a sub-gigahertz bandwidth photonic differentiator employing the self-induced optical modulation effect in a silicon-on-insulator micro-ring resonator. The all-passive DIFF is controlled through an all-optical pump-probe scheme. Input Gaussian-like pulses with 7.5ns pulse width are differentiated at high processing accuracy. A semi-analytical model that agrees with the experimental results is also derived. The DIFF’s energy efficiency is higher than 45%, far surpassing all previously reported schemes for sub-gigahertz bandwidth pulses. Our scheme expands the application potential of photonic DIFFs.

Proceedings Article | 6 November 2023 Paper

Nonlinear regulation on silicon photonic chips based on Sb2Se3 thin films

Maohui Li, Li’ao Ye, Haoran Ma, Zichao Zhao, Yuehai Wang, Jianyi Yang

Proceedings Volume 12921, 1292114 (2023) https://doi.org/10.1117/12.2688186

KEYWORDS: Silicon, Waveguides, Nonlinear optics, Antimony, Crystals, Silicon photonics, Absorption, Thin films, Nonlinear crystals, Refractive index

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With the continuous development of silicon-based optoelectronic chips, their high-power applications in communication, ranging, and other fields are gradually increasing. However, the nonlinear effects of silicon (Si) cause significant output power loss when the input optical power surpasses a certain threshold. This nonlinear relationship between the input optical power and the chip's output power reduces its working performance. Therefore, the importance of regulating the nonlinear phenomena of the chip gradually becomes prominent. In this regard, Sb₂Se₃ is an excellent material. We propose a scheme to improve the nonlinear power threshold by depositing crystalline Sb₂Se₃ (c-Sb₂Se₃) on the top of Si waveguides. Noted that optical loss caused by nonlinear absorption can be depressed by the c-Sb₂Se₃ film, as well as loss compensation is proportional to the length of the c-Sb₂Se₃ film deposited. This article theoretically analyzes the characteristics of Sb₂Se₃, which material can compensate for the nonlinear effect of Si during high-power operation of Si chips. This compensation increases the optical power threshold of nonlinear excitation and is nonvolatile. C-Sb₂Se₃ films with different lengths (from 15 μm to 60 μm) were deposited on Si waveguides and Si microring resonators with different coupling gap (from 0.2 μm to 0.35 μm) respectively. The results demonstrate a significant improvement in the device's optical nonlinear power threshold. Furthermore, as the length of the c-Sb₂Se₃ film increases, the optical nonlinear power threshold increases more significantly.

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