Organic field effect transistors FET have been fabricated with active semiconducting organic thin films that are only a few monolayers thick. The motivation of this study has been to establish a direct correlation between transistor performance and the polymer microstructure in the ultrathin accumulation layer of the transistor. Monolayer thick films of a block copolymer and several model oligomers consisting of a rigid conjugated sexithiophene (6T) block and a flexible polyethyleneoxide (PEO) block have been deposited onto the surface of e.g. SiO2 gate dielectrics functionalized with a self-assembled monolayer. Block copolymer phase behavior and surface morphology has been studied as a function of chain length, solvent and film thickness. Operational transistors have been demonstrated with film thicknesses of only one or two monolayers. Typical device characteristics show a carrier mobility on the order of 10-2 - 10-3 cm2/Vs and ON-OFF current ratio of 103 - 105. Film microstructure, orientation of micro-crystallites and film thickness have been studied by atomic force microscopy (AFM), UV-Vis absorption spectroscopy and X-ray diffraction.
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