ArF immersion technology has been used widely in volume production for 45nm node. For 32nm node and beyond,
double patterning technology with ArF immersion lithography is considered to be the main stream solution until EUV is
ready.
Our target is to reduce CoO(Cost of ownership) and we aim to develop for ecology and high durability laser. We will
introduce the latest performance data of the laser built for ArF immersion lithography under the EcoPhoton concept.
Eco-photon concept:
-CoC (Cost of Consumable)
-CoD (Cost of Downtime)
-CoE(Cost of Energy & Environment)
We have developed flexible and high power injection-lock ArF excimer laser for double patterning, GT62A-1SxE
(Max90W/6000Hz/Flexible power with 10-15mJ/0.30pm (E95)) based on the GigaTwin platform5). A number of
innovative and unique technologies are implemented on GT62A-1SxE. In addition, GT62A-1SxE is the laser matching
the enhancement technology of advanced illumination systems. For example, in order to provide illumination power
optimum for resist sensitivity, it has extendable power from 60W to 90W.
We have confirmed durability under these concept with the regulated operation condition with flexible power 60-90W.
We show the high durability data of GT62A-1SxE with Eco-Photon concept. In addition to the results the field reliability
and availability of our Giga Twin series (GT6XA). We also show technologies which made these performances and its
actual data. A number of innovative and unique technologies are implemented on GT62A.
ArF immersion technology is spotlighted as the enabling technology for the 45nm node and beyond. Recently, double
exposure technology is also considered as a possible candidate for the 32nm node and beyond. We have already released
an injection lock ArF excimer laser, the GT61A (60W/6kHz/10mJ/0.30pm) with ultra line-narrowed spectrum and
stabilized spectrum performance for immersion lithography tools with N.A.>1.3, and we have been monitoring the field
reliability data of our lasers used in the ArF immersion segment since Q4 2006.
In this report we show field reliability data of our GigaTwin series - twin chamber ArF laser products. GigaTwin series
have high reliability. The availability that exceeds 99.5% proves the reliability of the GigaTwin series.
We have developed tunable and high power injection-lock ArF excimer laser for double patterning, GT62A
(Max90W/6000Hz/Tunable power with 10-15mJ/0.30pm (E95)) based on the GigaTwin platform. A number of
innovative and unique technologies are implemented on GT62A.
- Support the latest illumination optical system
- Support E95 stability and adjustability
- Reduce total cost (Cost of Consumables, Cost of Downtime and Cost of Energy & Environment)
In advanced lithography processes, immersion lithography technology is beginning to be used in volume production at
the 45-nm technology node. Beyond that, double-patterning immersion lithography is considered to be one of the
promising technologies -meeting the requirements of the next-generation 32-nm technology node. Light source
requirements for double patterning lithography tool are high power and high uptime to enhance economic efficiency, as
well as extremely stable optical performances for high resolution capabilities.
In this paper, the GT62A, Argon Fluoride (ArF) excimer laser light source which meets these requirements is introduced.
The GT62A has an emission wavelength of 193-nm, a power output of 90 W and a repetition rate of 6,000 Hz. The dose
uniformity of the GT62A was improved for reduction of Critical Dimension (CD) variation and better Critical
Dimension Uniformity (CDU). A stable wavelength and a spectrum bandwidth of the GT62A satisfy the requirements of
the high resolution lithography tools which need the steady focus stability. In addition, we verified by simulation that the
spectrum bandwidth control in the GT62A contributes to Depth of Focus (DOF) enhancement. The new technology for
the light source and detailed optical performance data are presented.
ArF immersion technology is spotlighted as the enabling technology for the 45nm node and beyond. Recently, double
exposure technology is also considered as a possible candidate for the 32nm node and beyond. We have already released
an injection lock ArF excimer laser, the GT61A (60W/6kHz/10mJ/0.35pm) with ultra line-narrowed spectrum and
stabilized spectrum performance for immersion lithography tools with N.A.>1.3, and we have been monitoring the field
reliability data of our lasers used in the ArF immersion segment since Q4 2006. We show GT series reliability data in the
field. GT series have high reliability performance. The availability that exceeds 99.5% proves the reliability of the GT
series. We have developed high power injection lock ArF excimer laser for double patterning, the GT62A
(90W/6000Hz/15mJ/0.35pm(E95)) based on the GigaTwin (GT) platform. Number of innovative and unique
technologies are implemented on GT62A in order to reduce running cost of laser. We have introduced unique technology
to enable 40 billion pulse lifetime of laser chambers to drastically reduce running cost. In addition, we have improved
lifetime of Line Narrowing Module significantly by changing optical path. Furthermore, the extension of gas refill
intervals was achieved by introducing new gas supply module and sophisticated gas control algorithm. We achieved the
reduction of operation cost and down time by introducing these three technologies.
KEYWORDS: Molybdenum, High power lasers, Laser systems engineering, Laser applications, Light sources, Systems modeling, Semiconductors, Lithography, Electrodes, Pulsed laser operation
Reliable high power 193nm ArF light source is desired for the successive growth of ArF-immersion technology for 45nm node generation. In 2006, Gigaphoton released GT60A, high power injection locked 6kHz/60W/0.5pm (E95) laser system, to meet the demands of semiconductor markets. In this paper, we report key technologies for reliable mass production GT laser systems and GT60A high durability performance test results up to 20 billion pulses.
We have developed an ultra-line-narrowed, high-repetition-rate, high-power injection-locked F2 laser system for 157 nm dioptric projection systems under the ASET project “F2 Laser Lithography Development Project”. A spectral bandwidth of < 0.2 pm (FWHM), an output power of > 25 W, and an energy stability (3-sigma) of < 10 % at 5 kHz repetition rate was successfully obtained by using a low-power ultra-line-narrowed oscillator laser and a high-gain multi-pass amplifier laser. These parameters satisfy the requirements of exposure tools. A numerical simulation code that can simulate the spectral dynamics of the F2 laser under different operation modes such as free running operation, line-narrowed operation, and injection-locked operation, has also been developed. Using this simulation code, it is found that the instantaneous spectral bandwidth narrows monotonously during the laser pulse, and a narrower spectral output can be obtained by seeding the tail area of the line-narrowed F2 laser pulse. And the line-narrowing operation of the oscillator laser and the behavior of the injection-locked laser system can be predicted very precisely with this simulation code. The development of F2 laser for microlithography will be accelerated by this new simulation code.
The roadmap of semiconductor fabrication predicts that the semiconductor market will demand 65 nm node devices from 2004/2005. Therefore, an Ultra-Line-Narrowed F2 laser for dioptric projection systems is currently being developed under the ASET project of The F2 Laser Lithography Development Project. The target of this project is to achieve a F2 laser spectral bandwidth below 0.2 pm (FWHM) and an average power of 25 W at a repetition rate of 5 kHz. The energy stability (3-sigma) target is less than 10%. An Oscillator-Amplifier arrangement at 2 kHz was developed as a first step of an Ultra-Line-Narrowed F2 laser system. With this laser system, we did the basic study of the synchronization technology for line narrowing operation using two system arrangements: MOPA (Master Oscillator/Power Amplifier) and Injection Locking. Based on this experience we have developed the 5 kHz system. With the 5 kHz Line-Narrowed Injection Locking system, we have achieved a spectral bandwidth of < 0.2 pm with an output energy of > 5 mJ and an energy pulse to pulse stability of 10%. The feasibility of a 5 kHz Ultra-Line-Narrowed F2 Laser for Dioptric Projection Systems has been demonstrated.
The Association of Super-Advanced Electronics Technologies (ASET) started The F2 Laser Lithography Development Project in March 2000, to clarify solutions of base F2 lithography technologies. In this project, we are developing an ultra line-narrowed F2 laser light source for exposure tools tat are employing dioptric projection optics. We have developed an intermediate engineering injection- locking laser system that has an oscillator laser and an amplifier to study the feasibility of an ultra line-narrowed F2 laser. A spectral bandwidth of <0.2pm (FWHM) at a repetition rate of 1000Hz and an average power of 14W has been achieved with this laser system. The laser output performance dependence on the relative delay between oscillator laser and amplifier is also measured.
It is predicted that the semiconductor market will demand 70 nm devices from 2004 or 2005. Hence, F2 laser microlithography systems have to be developed according to this time frame. At ASET, 'The F2 Laser Lithography Development Project' started in March 2000, as a 2-year project to fulfill this market requirement. The final target of this project is to achieve a F2 laser spectral bandwidth of 0.2 pm (FWHM) at a repetition rate of 5000 Hz and an average power of 25 W. These specifications meet the demand of dioptric projection system. We have done a feasibility study for a high efficiency line narrowing design to achieve the ultra narrow spectral bandwidth and the high output power. In addition, we have developed an intermediate engineering laser system consisting of an oscillator laser and an amplifier. With this laser system we have performed the line-narrowed operation using two arrangements: Master Oscillator Power Amplifier (MOPA) and Injection Locking. With this Oscillator-Amplifier system and have achieved a spectral bandwidth (convoluted) of FWHM <0.2 pm with both systems: MOPA and Injection Locking. The maximum output energy was >20 mJ for MOPA and >15 mJ for Injection Locked operation.
An ultra narrow line width of the F2 laser, narrower than 0.2pm, is required for a CaF2 only refractive optics exposure system. Also, a low peak laser power is needed for the extension of the optics lifetime. These ultra narrow line width and low peak power are achievable by long pulse duration. We, Association of Super-Advanced Electronics Technologies (ASET), are developing an ultra line narrowed F2 laser below 0.2pm, with 5mJ high output energy, by adopting a 2-stage F2 laser system, which consists of an oscillator and an amplifier. The oscillator for this 2-stage system is required to have an ultra narrow line width of below 0.2pm. We have developed F2 laser with very long laser pulse duration of over 65ns (Tis: the integral squire pulse width), in a free running operation. And, by installing a line-narrowing module (LNM) in this F2 laser, an ultra narrow line width of below 0.2 pm (FWHM, deconvolved) has been realized. This F2 laser was successfully used for the oscillator of 2-stage system.
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