We describe a wafer prober integrated with an optical probe for wafer-level inspection of photonic integrated circuits. The design of the electric and photonic circuit was optimized for wafer-level inspection. The customized prober and circuit design enabled us to perform high-volume and high-speed inspection of over 400 elements, and sufficiently reliable results were obtained. It took about 10 sec. to evaluate the propagation loss of an element. This technology will be a key to reducing the costs of photonic devices.
High-capacity optical transmitters with reduced size, cost, and power consumption are required to meet growing bandwidth requirements of network systems. A high-modulation-efficiency Mach-Zehnder modulator (MZM) on an Si platform is a key piece of equipment for these transmitters. Si-MZMs have been widely reported; however their performance is limited by the material properties of Si. To overcome the performance limitations of Si MZMs, we have integrated III-V materials on Si substrate and developed a heterogeneously integrated III-V/Si metal oxide semiconductor (MOS) capacitor phase shifter for constructing ultra-high efficient MZM, in which the n-InGaAsP, p-Si, and SiO2 film are used for constructing the MOS capacitor. The fabricated MZM with the MOS capacitor exhibited a VπL of 0.09 Vcm and insertion loss of ~2 dB. 32-Gbps modulation of the MZM was also demonstrated.
A high-efficiency and low-loss Mach-Zehnder modulator on a Si platform is a key component for meeting the demand for high-capacity, low-cost and low-power optical transceivers in future optical fiber links. We report a III-V/Si MOS capacitor Mach-Zehnder modulator with an ultrahigh-efficiency phase shifter, which consists of n-type InGaAsP and ptype Si. The main advantage of this structure is a large electron-induced refractive index change and low free-carrier absorption loss of the n-type InGaAsP. The heterogeneously integrated InGaAsP/Si MOS capacitor structure is fabricated by using the oxygen plasma assisted bonding method. The fabricated device shows VπL of 0.09 Vcm, a value over three-times smaller than that of the conventional Si MOS capacitor Mach-Zehnder modulator, without an increase in the insertion loss. This clearly indicates that the proposed III-V/Si MOS capacitor Mach-Zehnder modulator overcomes the performance limit of the Si Mach-Zehnder modulator.
Digital coherent technology is considered an attractive way of realizing both high-speed metro links and long distance transmissions. In metro areas, there is a strong demand for a smaller, faster transceiver module. This demand is mainly driven by the rapidly increasing data center interconnection traffic, where transmission capacity per faceplane is a key feature. Therefore, optical integration technology is desired. Since compensation in digital coherent technology is performed in the electrical or digital domain, users can deal with those optics performances that are not compensated for digitally. This means using a new material that cannot provide perfect characteristics but that is suitable for miniaturization and integration is possible. Silicon photonics (SiPh) is considered an attractive technology that would enable the significant miniaturization of optical circuits and be capable of optical integration with high manufacturability. While SiPh-based devices have begun to be deployed for very short or short reach links on the basis of direct detection technology, their digital coherent applications have recently been investigated in view of their integration capability. This paper describes recent progress on SiPh-based integrated optical devices for high-speed digital coherent transceivers targeting metro links. An optical modulator and receiver with related circuits have been integrated into a single SiPh chip. TEC-free operation under non-hermetic conditions and the direct attachment of optical fibers have both been realized. Very thin and small packaging with sufficient performance has been demonstrated by using the SiPh chip co-packaged with high-speed ICs.
We developed a design technique for a photonics-electronics convergence system by using an equivalent circuit of optical devices in an electrical circuit simulator. We used the transfer matrix method to calculate the response of an optical device. This method used physical parameters and dimensions of optical devices as calculation parameters to design a device in the electrical circuit simulator. It also used an intermediate frequency to express the wavelength dependence of optical devices. By using both techniques, we simulated bit error rates and eye diagrams of optical and electrical integrated circuits and calculated influences of device structure change and wavelength shift penalty.
Silicon (Si) photonic wire waveguides provide a compact photonic platform on which passive, dynamic, and active photonic devices can be integrated. This paper describe the demonstrations of several kinds of integrated photonic circuits. The platform consists of Si wire, silicon-rich Si dioxide (SiOx) and Si oxinitride (SiON) waveguides for passive devices and a Si rib waveguide with a p-i-n structure and a germanium (Ge) device formed on Si slab for active devices. One of the key technologies for the photonic integration platform is low temperature fabrication because a back-end process with high temperature may damage active and electronic devices. To overcome this problem, we have developed electron cyclotron resonance chemical vapor deposition as a low-temperature deposition technique. Another key technology is polarization manipulation for reducing polarization dependence. A polarization diversity circuit is fabricated by applying Si wire and SiON integration. The polarization-dependent loss of the diversity circuit is less than 1 dB. Moreover we have developed several kinds of integrated circuit including passive, dynamic and active devices. Ge photodiodes are monolithically integrated with an SiOx-arrayed waveguide grating (AWG). We have confirmed that the operation speed of the integrated Ge photodiode is over 22 Gbps for all 16 channels. Variable optical attenuators (VOAs) fabricated on the Si p-i-n rib waveguides and an AWG based on the SiOx waveguide are integrated successfully. The total size of 16-ch-AWG-VOAs is 15 8 mm2. The device has already been made polarization independent. Furthermore electronic circuits are successfully mounted on the integrated photonic device by using flip-chip bonding.
Silicon photonic wire waveguides, featuring very strong optical confinement and compatibility with silicon electronics,
provide a compact photonic platform on which passive, dynamic, and active photonic devices can be integrated. We have
already developed a low-loss waveguide platform and integrated various photonic devices. For passive devices, we have
developed polarization-independent wavelength filters using a monolithically integrated polarization diversity circuit, in
which waveguide-based polarization manipulation devices are implemented. The polarization-dependent loss of a ring
resonator wavelength filter with polarization diversity is less than 1 dB. For dynamic devices, we have developed
compact carrier-injection-type variable optical attenuators (VOAs). The length of the device is less than one millimeter,
and the response time is nanosecond order. The device has already been made polarization independent. We have
recently monolithically integrated these fast VOAs with low-dark-current germanium photodiodes and achieved
synchronized operation of these devices. For nonlinear devices, a free-carrier extraction structure using a PIN junction
implemented in the waveguide can increase the efficiency of nonlinear functions. For example, in a wavelength
conversion based on the Four-wave-mixing effect, the conversion efficiency can be increased by 6 dB.
We devised a silicon photonic circuit with polarization diversity. The circuit consists of polarization splitters and
rotators. The splitter is based on simple 10-micrometer-long directional couplers. The polarization extinction ratio is 23
dB and excess loss is less than 0.5 dB. The rotator consists of a silicon waveguide embedded in an off-axis siliconoxynitride
waveguide. A 35-micrometer-long rotator gives a rotation angle of more than 72 degrees and excess loss of
about 1 dB. Both devices can be made by using planar fabrication technology and do not require a complex structure
such as three-dimensional forming. Using these devices, we developed a polarization diversity circuit for a ringresonator
wavelength filter. The polarization dependent loss of the filter with polarization diversity is about 1 dB. A 10-
Gbps data transmission with scrambled polarization is demonstrated.
We demonstrate efficient nonlinear functions using silicon nanophotonic structures. In the ultrasmall core of the
waveguides and cavities, nonlinear phenomena are significantly enhanced. Applying the two-photon absorption effect,
we have confirmed all optical modulation, in which the modulation speed is improved to around 50 ps by eliminating
free carriers. Applying the four-wave-mixing effect, we have achieved high-efficiency wavelength conversion. The
conversion efficiency is -11 dB, and the efficiency will be further improved by eliminating free carriers. Using the four-wave-
mixing effect, we have also realized a low-noise entangled photon pair source. The source does not need a
refrigeration system for noise reduction, which is a great advantage for practical application.
This paper presents our recent progress in the development of a Si wire waveguiding system for microphotonics devices. We have developed function devices that integrate several fundamental components and confirmed that they exhibited excellent characteristics due to the accuracy of the Si microfabrication. The propagation loss of the waveguide is less than 1.2dB/cm, and branching devices and basic filters show good characteristics. Using the fundamental microfabrication technique, we have developed other passive and dynamic functional devices. As an example of our recent advances using passive devices, we present a polarization diversity system consisting of a separator and a rotator. As a component of a dynamic functional device, we show a low-loss rib-type silicon wire waveguide with low-impedance p-i-n structure and its optical attenuation characteristics.
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