A polymer focusing waveguide grating coupler(FGC) was implemented by UV nanoimprinting method. The size of this focusing grating is 1 mm X 1 mm and the total device size is 8 mm X 2 mm. We use the UV sensible polymer which is coated by spin coating method. After nanoimprinting the device, the residual thickness on the slab waveguide is about 10 nm ~ 30 nm. The spot size of this polymer FGC is 347 nm for blue laser and the coupling efficiency is 28.2%.
A micro-optical pickup has been implemented by using a focusing waveguide grating coupler. The grating coupler was designed and fabricated on a single mode BPSG (boron phosphor silica glass) waveguide layer. The coupling area was 1×1mm2 containing more than 1,500 grating lines, where the maximum and minimum grating pitch were 296nm and 811nm, respectively. The focal length and the numerical aperture of the present grating coupler were 530 μm and 0.68 with 632.8nm He-Ne red laser. The full width half maximum diameter of the focal spot was measured to be 450 nm and 510 nm in x and y direction.
A focusing grating coupler (FGC) using a blue laser of a wavelength of 400 nm as a light source was fabricated for the first time. The FGC was designed to have a numerical aperture of 0.48 and a focusing angle of zero. The focal length and the grating area were 900 μm and 1×1mm2, respectively. Grating pattern of a minimum period of 0.2μm was fabricated on a single mode waveguide based on the boron phosphor silicate glass (BPSG) material by electron-beam lithography process using the vector scan method. The spot size at the full width (1/e2) was measured at 0.85 and 0.92μM in x and y direction, respectively, and these values are nearly same as the diffraction limited size.
A study of the laser annealing effect for the thermal evaporated Al thin film onto micromirrors of optical switch and (100) Si subtrates is reported. The 2 X 2 optical switches has been fabricated through DRIE process. The input laser energy has been changed from 150 mJ/pulse to 350 mJ/pulse and the number of pulse also changed. The surface morphology is investigated by SEM micrograph and the roughness is examined by AFM. The reflectivities of the samples are measured by IR reflectometer and the results are normalized with gold. In case of the energy above 200 mJ/pulse, the reflectivities are improved up to above 0.98 from the incident beam region of 1300 nm to 1550 nm. The improvement of reflectivity is caused by the reflow process induced laser annealing. By the reflow process the grain have been growth and agglomerated for the surface planarization. The energy for planarization is sufficient as 1 pulse incident laser beam. According to the number of pulses, reflectivity is somewhat degraded by excess heat of reflow in case of above 5 pulses. There is minor morphology change with input laser energy.
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