This work presents the influence of polarization orientation on bulk damage performance of type I doubler KDP crystals under different wavelengths pulses exposure. Pinpoints densities (PPD) and the size distribution of pinpoints are extracted through light scattering pictures. The obtained results strongly indicate that the measured PPD as a function of the fluence are both wavelength and polarization orientation related, while neither fluence nor polarization orientation affect the size distribution of pinpoints. We also find that the bulk damage characteristics can divide into three sorts with respect to the wavelength, suggesting the existence of different species of precursors and different mechanisms responsible for bulk damage initiation in SHG KDP crystals.
A multipurpose laser damage test facility delivering pulses from 1ns to 20ns and designed to output energy 40 Joule at 351nm is presented. The laser induced damage threshold (LIDT) measurement and test procedure are performed. The original system consist of the online detection system based on the microscopy and an energy detection device based on the scientific grade Charge Coupled Device (CCD) which provides the method to measure the LIDT with high accuracy. This method is an efficient way that allows measuring a small area fluence which the defect exposed. After complete test procedure and data treatment the damage position of the defect has been found. Then we can obtain the local fluence of small area when the damage occurred. This procedure provides a straightforward means of laser-damage threshold obtained from the test method. Damage correlation of measures is discussed in connection with present theoretical understanding of laser damage phenomenon. The damage process in transparent dielectric materials being the results of complex processes involving multi-photon ionization, avalanche ionization, electron-phonon coupling, and thermal effects. Those complex processes lead to the damage on the optical surface. We performed a method to measure the local fluence which defects irradiated with high accurate.
The investigation of the influence polarization orientation on damage performance of type I doubler KDP crystals grown by the conventional growth method under under 532nm pulse exposure is carried out in this work. The obtained results point out the pinpoint density (ppd) of polarization parallels the extraordinary axis is around 1.5× less than that of polarization parallels the ordinary axis under the same fluence, although polarization has no influence on size distribution of pinpoints. Meanwhile, crystal inhomogeneity is observed during experiment.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.