AlGaN/GaN heterostructures is a promising wide-bandwidth semiconductor material for underwater blue light detection due to their unique physical properties. Nevertheless, due to the thin two-dimensional electron gas (2DEG) at the heterostructure interface, the contact resistance remains relatively high. To reduce the contact resistance and improve the potential of AlGaN/GaN heterostructures in high-power and high-frequency electronic devices, multi-channel AlGaN/GaN heterostructures were designed and manufactured in this research. The carrier distribution and distribution of Al, Ga and N elements in the multi-channel AlGaN/GaN heterostructures were characterized. Moreover, the effect of polarization charge on carrier distribution was analysed using energy band theory. The results indicate that multi-channel AlGaN/GaN heterostructures can effectively reduce the contact resistance of devices and that several parallel 2DEGs are present inside the device. The polarisation charge at the heterostructure interface results in an uneven carrier distribution in each channel region. This work is helpful for the application of AlGaN/GaN to underwater blue light detectors.
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