Mask profile of chromeless phase-shifting lithography (CPL) defined by OCD has been investigated. In CPL masks,
unbalanced bombardments caused by different ion accelerations lead to the formation of micro-notch structures. A better
understanding of micro-notch structures is essential for quality gating of mask processes to improve of CPL mask
profiles. By measuring 12 of 16 elements of Mueller matrix, we are able to set up a model to simulate the depth of
micro-notch structure profile which shows good correlation with TEM images. Moreover, values of CD, quartz etching
depth and side wall angle acquired by OCD are presented and compared with those obtained by SEM, TEM and AFM,
respectively.
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