Prof. Huiyun Liu Profile

Prof. Huiyun Liu

Professor at Univ College London

SPIE Involvement:

Author

Publications (37)

Proceedings Article | 13 March 2024 Presentation

Low-loss III-IV photonics and high efficiency grating couplers incorporating low-index AlOx layers

Fwoziah Albeladi, Sara-Jayne Gillgrass, Josie Nabialek, Chris Hodges, Mingchu Tang, Huiwen Deng, Huiyun Liu, Samuel Shutts, Peter Smowton

Proceedings Volume PC12889, PC128890K (2024) https://doi.org/10.1117/12.3002203

KEYWORDS: Optical gratings, Photonics, Waveguides, Semiconductor lasers, Oxidation, Optics manufacturing, Wave propagation, Silicon photonics, Photonic integrated circuits, Optical design

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Proceedings Article | 13 March 2024 Presentation

Selective-area intermixing for implementing InAs QDs based active-passive integration for photonic integrated circuits

Abigail Enderson, Pawan Mishra, Zhongming Cao, Fwoziah Albeladi, Sara-Jayne Gillgrass, Bogdan-Petrin Ratiu, Nianhua Peng, Mingchu Tang, Huiyun Liu, Samuel Shutts, Peter Smowton

Proceedings Volume PC12905, PC1290502 (2024) https://doi.org/10.1117/12.3002710

KEYWORDS: Photonic integrated circuits, Indium arsenide, Quantum circuit implementation, Crystals, Absorption, Waveguides, Tolerancing, Thermography, Quenching, Quantum enhancement

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Proceedings Article | 17 March 2023 Presentation

1.3-μm InAs QD lasers for integrated photonics

Lydia Jarvis, Ben Maglio, Sara Gillgrass, Craig Allford, Fwoziah Albeladi, Abigail Enderson, Sam Shutts, Huiwen Deng, Mingchu Tang, Huiyun Liu, Peter Smowton

Proceedings Volume PC12440, PC1244001 (2023) https://doi.org/10.1117/12.2656077

KEYWORDS: Integrated photonics, Indium arsenide, Quantum dots, Quantum dot lasers, Modulation, Laser damage threshold, Tolerancing, Silicon, Semiconductor lasers

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Proceedings Article | 9 March 2022 Presentation

Active region doping strategies in O-band InAs/GaAs quantum-dot lasers

Lydia Jarvis, Ben Maglio, Samuel Shutts, Zhibo Li, Huiwen Deng, Mingchu Tang, Huiyun Liu, Peter Smowton

Proceedings Volume PC12021, PC1202104 (2022) https://doi.org/10.1117/12.2614632

KEYWORDS: Doping, Quantum dot lasers, Indium arsenide, Gallium arsenide, Modulation, Temperature metrology, Photonics, Molecular beam epitaxy, Luminescence, Lithium

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Proceedings Article | 6 October 2021 Presentation

Inversion boundary annihilation in GaAs grown on On‐Axis Silicon (001) via Molecular Beam Epitaxy

Xuezhe Yu, Keshuang Li, Junjie Yang, Ying Lu, Zizhuo Liu, Mingchu Tang, Pamela Jurczak, Jae-Seong Park, Huiwen Deng, Hui Jia, Manyu Dang, Ana Sanchez, Richard Beanland, Wei Li, Xiaodong Han, Jinchuan Zhang, Huan Wang, Fengqi Liu, Siming Chen, Alwyn Seeds, Peter Smowton, Huiyun Liu

Proceedings Volume 11880, 118800H (2021) https://doi.org/10.1117/12.2601451

KEYWORDS: Silicon, Gallium arsenide, Molecular beam epitaxy, Photonic integrated circuits, Interfaces, Indium arsenide, Epitaxy, CMOS technology, Annealing

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Proceedings Article | 18 April 2021 Presentation + Paper

Monolithic and hybrid integration of InAs/GaAs quantum dot microdisk lasers on silicon

N. Kryzhanovskaya, E. Moiseev, A. Nadtochiy, M. Maximov, A. Dragunova, M. Fetisova, M. Kulagina, Yu. Guseva, S. Mintairov, N. Kalyuzhnyy, M. Tang, M. Liao, J. Wu, S. Chen, H. Liu, A. Zhukov

Proceedings Volume 11775, 117750P (2021) https://doi.org/10.1117/12.2589118

KEYWORDS: Silicon, Semiconductor lasers, Quantum dots, Hybrid silicon lasers, Resistance, Gallium arsenide, Thin films, Silicon films, Semiconducting wafers, Optoelectronics

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Proceedings Article | 2 March 2020 Presentation + Paper

A needle in a needlestack: exploiting functional inhomogeneity for optimized nanowire lasing

Patrick Parkinson, Juan Alanis, Stefan Skalsky, Yunyan Zhang, Huiyun Liu, Mykhaylo Lysevych, Hark Hoe Tan, Chennupati Jagadish

Proceedings Volume 11291, 112910K (2020) https://doi.org/10.1117/12.2558405

KEYWORDS: Nanowires, Luminescence, Laser damage threshold, Reflectivity, Semiconductors, Quantum wells, Spectroscopy, Pulsed laser operation, Machine vision

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Proceedings Article | 2 March 2020 Paper

GaAsP nanowires containing intentional and self-forming quantum dots

H. Aruni Fonseka, Anton Velichko, Yunyan Zhang, George Davis, James Gott, Tillmann Godde, Ana Sanchez, Richard Beanland, Huiyun Liu, David Mowbray

Proceedings Volume 11291, 112910J (2020) https://doi.org/10.1117/12.2543747

KEYWORDS: Quantum wells, Gallium arsenide, Nanowires, Quantum dots, Crystals, Active optics, Heterojunctions, Gallium, Transmission electron microscopy, Scanning transmission electron microscopy

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Proceedings Article | 2 March 2020 Presentation + Paper

Impact of dislocations in monolithic III-V lasers on silicon: a theoretical approach

Constanze Hantschmann, Zizhuo Liu, Mingchu Tang, Alwyn Seeds, Huiyun Liu, Ian White, Richard Penty

Proceedings Volume 11274, 112740J (2020) https://doi.org/10.1117/12.2547327

KEYWORDS: Quantum wells, Semiconductor lasers, Silicon, Diffusion, Optical simulations, Spatial resolution, Quantum dots, Group III-V semiconductors, Silicon photonics

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Proceedings Article | 19 November 2019 Paper

Optically-pumped InAs/GaAs quantum-dot microdisk lasers monolithically grown on on-axis Si (001) substrate

Taojie Zhou, Mingchu Tang, Guohong Xiang, Siming Chen, Huiyun Liu, Zhaoyu Zhang

Proceedings Volume 11182, 1118208 (2019) https://doi.org/10.1117/12.2538773

KEYWORDS: Silicon, Quantum optics, Quantum dots, Laser damage threshold, Continuous wave operation, Optical pumping, Laser sources

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Proceedings Article | 23 May 2018 Presentation

Continuous wavelength operation of injection III-V microdisk lasers directly grown on Si substrate with emission wavelength beyond 1.2 µm (Conference Presentation)

Natalia Kryzhanovskaya, Eduard Moiseev, Yuliya Polubavkina, Mikhail Maximov, Andrey Lipovskii, Mingchu Tang, Mengya Liao, Jiang Wu, Siming Chen, Alexandr Dubinov, Nikolay Baidus, Dmitriy Yurasov, Yulia Guseva, Zakhary Krasilnik, Huiyun Liu, Alexey Zhukov

Proceedings Volume 10682, 106820V (2018) https://doi.org/10.1117/12.2306225

KEYWORDS: Silicon, Quantum wells, Semiconductor lasers, Quantum dots, Laser damage threshold, Photonic integrated circuits, Resonators, Optical lithography, Plasma etching, Plasma

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A combination of high operation temperatures and small sizes of diode lasers directly grown on silicon substrates is essential for their application in future photonic integrated circuits. In this work, we report on electrically-pumped III-V microdisk lasers monolithically grown on Si substrates with active regions of two kinds: either an InGaAs/GaAs quantum well (QW) or InAs/InGaAs/GaAs quantum dots (QDs). Microdisk resonators were defined using photolithography and plasma chemical etching. The active region diameter was varied from 11 to 31 µm. Microlasers were tested without external cooling at room and elevated temperatures. The QW laser structure was epitaxially grown by MOCVD on silicon (100) with an intermediate MBE-grown Ge buffer. Under pulsed injection (0.5-µs-long injection pulses with 150 Hz repetition rate), lasing is achieved in QW microlasers with diameters of 23-31 µm with a minimal threshold current density of 28 kA/cm^2. Quasi-single mode lasing (SMSR is up to 20 dB) is observed with emission wavelength around 988 nm. To the best of our knowledge, this is the first quantum well electrically-pumped microdisk lasers monolithically deposited on (001)-oriented Si substrate. Quantum wells are typically characterized by high optical gain and high direct modulation bandwidth, which can be important in view of further miniaturization of microlasers and their future application. The sidewall passivation can be helpful to reduce the threshold current. As compared to QWs, quantum dots demonstrate reduced sensitivity to threading dislocations and other crystalline defects as well as to sidewall recombination owing to a suppressed lateral transport of charge carriers which prevents their diffusion towards non-radiate recombination centers. The QD laser structure was directly grown by MBE on Si (001) substrate with 4° offcut to the [011] plane. QD microlasers were tested at room temperature in CW regime with a DC current varied from 0 to 50 mA and at elevated temperatures under CW and pulsed excitation (0.5-µs-long injection pulses with 10 kHz repetition rate). The InAs/InGaAs QDs active region provides the wavelengths in the 1.32–1.35 µm spectral interval. At room temperature, lasing is achieved in microlasers with diameters of 14-30 µm with a minimal threshold current density of 600 A/cm2 (compare with that of 427 A/cm2 in edge-emitting laser). The threshold current density and specific thermal resistance of 0.004 °C×cm^2/mW are comparable to those of high-quality QD microdisk lasers on GaAs substrates. Lasing wavelength demonstrates low sensitivity to current-induced self-heating. Lasing is single mode (SMSR 20 dB) with a dominant mode linewidth as narrow as 30 pm. Under CW excitation lasing sustains up to 60 °C in microlasers with diameter of 30 µm. Because of self-heating, an actual temperature of the active region is close to 100°C. Under pulsed excitation, the maximal lasing temperature is 110°C. To our best knowledge, these are the smallest microlasers on silicon operating at such elevated temperatures ever reported. Up to 90°C lasing proceeds on the ground state optical transition of QDs with wavelength about 1.35 µm. At higher temperatures, lasing wavelength jumps to the excited state transition.

Proceedings Article | 14 March 2018 Presentation

High-responsivity photodetection using a single p-type GaAs nanowire (Conference Presentation)

Hassan Ali, Yunyan Zhang, Ana Sanchez, Huiyun Liu, Xiulai Xu

Proceedings Volume 10543, 105430J (2018) https://doi.org/10.1117/12.2299472

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Proceedings Article | 26 January 2018 Presentation + Paper

Resonant scattering probes for terahertz near-field microscopy

Tom Siday, Michele Natrella, Jiang Wu, Huiyun Liu, Oleg Mitrofanov

Proceedings Volume 10540, 1054020 (2018) https://doi.org/10.1117/12.2290903

KEYWORDS: Terahertz radiation, Scattering, Indium arsenide, Near field, Microscopy, Antennas, Near field scanning optical microscopy

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Proceedings Article | 23 February 2017 Presentation + Paper

Influence of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers

Dongyoung Kim, Mingchu Tang, Jiang Wu, Sabina Hatch, Yurii Maidaniuk, Vitaliy Dorogan, Yuriy Mazur, Gregory Salamo, Huiyun Liu

Proceedings Volume 10099, 100990H (2017) https://doi.org/10.1117/12.2250328

KEYWORDS: Silicon, Doping, Solar cells, Absorption, Molecular beam epitaxy, Quantum dots, Indium arsenide, Gallium arsenide, Chlorine, External quantum efficiency, Gallium

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Proceedings Article | 20 February 2017 Presentation + Paper

Influence of droplet size on the growth of high-quality self-catalyzed GaAsP nanowires

Yunyan Zhang, Ana Sanchez, Martin Aagesen, Yue Sun, Jiang Wu, Dongyoung Kim, Pamela Jurczak, Suguo Huo, Xiulai Xu, Huiyun Liu

Proceedings Volume 10114, 101140K (2017) https://doi.org/10.1117/12.2249878

KEYWORDS: Nanowires, Silicon, Crystals, Gallium arsenide, Gallium, Scanning electron microscopy, Thin films, Photonic crystal devices, Photonic crystals, Arsenic

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Proceedings Article | 20 February 2017 Presentation + Paper

Integrating III-V quantum dot lasers on silicon substrates for silicon photonics

M. Liao, S. Chen, M. Tang, J. Wu, W. Li, K. Kennedy, I. Ross, A. Seeds, H. Liu

Proceedings Volume 10108, 101081A (2017) https://doi.org/10.1117/12.2249761

KEYWORDS: Silicon, Semiconductor lasers, Silicon photonics, Quantum dots, Molecular beam epitaxy, Continuous wave operation, Quantum dot lasers, Semiconductor materials, Electronics, Light, Gallium arsenide, Indium, Laser damage threshold, Photonics, Gallium, Optical filters

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Proceedings Article | 27 January 2017 Presentation + Paper

GaAsP nanowires and nanowire devices grown on silicon substrates

Yunyan Zhang, Martin Aagesen, Ana Sanchez, Richard Beanland, Jiang Wu, Huiyun Liu

Proceedings Volume 10111, 101110X (2017) https://doi.org/10.1117/12.2250588

KEYWORDS: Silicon, Solar cells, Photovoltaics, Nanowires, Gallium, Crystals, Water splitting, Transmission electron microscopy, Gallium arsenide, Arsenic

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Proceedings Article | 15 March 2016 Paper

InAs/GaAs quantum-dot light emitters monolithically grown on Si substrate

M. Liao, S. Chen, M. Tang, J. Wu, Q. Jiang, A. Seeds, H. Liu

Proceedings Volume 9758, 975803 (2016) https://doi.org/10.1117/12.2213089

KEYWORDS: Silicon, Semiconductor lasers, Pulsed laser operation, Silicon photonics, Metamaterials, Plasmonics, Light emitting diodes, Molecular beam epitaxy, Hybrid silicon lasers, Copper, Gallium arsenide, Transmission electron microscopy, Atomic force microscopy, Laser damage threshold, Fabrication, Indium arsenide, Quantum dots

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Proceedings Article | 15 March 2016 Paper

Analysing radiative and non-radiative recombination in InAs QDs on Si for integrated laser applications

Jonathan Orchard, Chris Woodhead, Samuel Shutts, Jiang Wu, Angela Sobiesierski, Rob Young, Richard Beanland, Huiyun Liu, Peter Smowton, David Mowbray

Proceedings Volume 9758, 975809 (2016) https://doi.org/10.1117/12.2209693

KEYWORDS: Quantum dots, Luminescence, Silicon, Instrument modeling, Indium arsenide, Laser applications, Silicon photonics, Integrated optics, Electronic components, Data transmission, Annealing, Gallium arsenide, Semiconductor lasers, Laser damage threshold, Interfaces

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Proceedings Article | 15 March 2016 Paper

Growth of high-quality self-catalyzed core-shell GaAsP nanowires on Si substrates

Yunyan Zhang, Martin Aagesen, Ana Sanchez, Jiang Wu, Richard Beanland, Thomas Ward, Dongyoung Kim, Pamela Jurczak, Suguo Huo, Huiyun Liu

Proceedings Volume 9758, 97580E (2016) https://doi.org/10.1117/12.2210983

KEYWORDS: Nanowires, Arsenic, Thin film growth, Silicon, Crystals, Chemical elements, Luminescence, Structural design, Solar cells, Water splitting, Photovoltaics, Gallium, Scanning electron microscopy, Zinc, Transmission electron microscopy, Molecular beam epitaxy, Visible radiation

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Proceedings Article | 14 March 2016 Paper

Simulation study of GaAsP/Si tandem cells including the impact of threading dislocations on the luminescent coupling between the cells

Arthur Onno, Nils-Peter Harder, Lars Oberbeck, Huiyun Liu

Proceedings Volume 9743, 97431B (2016) https://doi.org/10.1117/12.2211113

KEYWORDS: Group III-V semiconductors, Luminescence, Tandem solar cells, Photovoltaics, Silicon solar cells, Silicon, Solar cells, Photons, Absorption, Diffusion, Performance modeling, Solar energy, Computer architecture

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Proceedings Article | 14 March 2016 Paper

1.7eV Al0.2Ga0.8As solar cells epitaxially grown on silicon by SSMBE using a superlattice and dislocation filters

Arthur Onno, Jiang Wu, Qi Jiang, Siming Chen, Mingchu Tang, Yurii Maidaniuk, Mourad Benamara, Yuriy Mazur, Gregory Salamo, Nils-Peter Harder, Lars Oberbeck, Huiyin Liu

Proceedings Volume 9743, 974310 (2016) https://doi.org/10.1117/12.2208950

KEYWORDS: Silicon, Solar cells, Gallium arsenide, Superlattices, Photovoltaics, Molecular beam epitaxy, Group III-V semiconductors, Transmission electron microscopy, Laser sintering, External quantum efficiency, Calibration

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Proceedings Article | 21 May 2015 Paper

Design and fabrication of indium phosphide air-bridge waveguides with MEMS functionality

Wing Ng, Nina Podoliak, Peter Horak, Jiang Wu, Huiyun Liu, William Stewart, Anthony Kenyon

Proceedings Volume 9517, 95170A (2015) https://doi.org/10.1117/12.2178612

KEYWORDS: Waveguides, Microelectromechanical systems, Geometrical optics, Electron beam lithography, Light wave propagation, Indium gallium phosphide, Etching, Refractive index, Indium gallium arsenide, Indium

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Proceedings Article | 27 February 2015 Paper

Tunable optical buffer based on III-V MEMS design

Wing Ng, Nina Podoliak, Peter Horak, Jiang Wu, Huiyun Liu, William Stewart, Anthony Kenyon

Proceedings Volume 9375, 93750Q (2015) https://doi.org/10.1117/12.2078224

KEYWORDS: Waveguides, Microelectromechanical systems, Indium gallium arsenide, Electron beam lithography, Wave propagation, Electrodes, Etching, Optical design, Indium gallium phosphide, Group III-V semiconductors

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Proceedings Article | 27 February 2015 Paper

Optical characterisation of catalyst free GaAsP and GaAsP core-shell nanowires grown directly on Si substrates by MBE

Jonathan Orchard, Yunyan Zhang, Jiang Wu, Huiyun Liu, David Mowbray

Proceedings Volume 9373, 937308 (2015) https://doi.org/10.1117/12.2079263

KEYWORDS: Gallium arsenide, Silicon, Gallium, Scanning electron microscopy, Solids, Molecular beam epitaxy, Crystals, Luminescence, Zinc, Nanowires

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Proceedings Article | 27 February 2015 Paper

Optimising the defect filter layer design for III/V QDs on Si for integrated laser applications

Jonathan Orchard, Jiang Wu, Siming Chen, Qi Jiang, Thomas Ward, Richard Beanland, Huiyun Lui, David Mowbray

Proceedings Volume 9373, 93730G (2015) https://doi.org/10.1117/12.2076601

KEYWORDS: Silicon, Gallium arsenide, Annealing, Semiconductor lasers, Optical filters, Transmission electron microscopy, Luminescence, Laser applications, Superlattices, Excitons

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Proceedings Article | 29 January 2008 Paper

High-performance 1300-nm InAs/GaAs quantum-dot lasers

H. Y. Liu, M. Hopkinson, K. Groom, R. Hogg, D. Mowbray

Proceedings Volume 6909, 690903 (2008) https://doi.org/10.1117/12.765735

KEYWORDS: Gallium arsenide, Indium gallium arsenide, Scanning probe lithography, Indium arsenide, Modulation, Doping, Laser damage threshold, Continuous wave operation, Quantum dots, Temperature metrology

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Proceedings Article | 11 January 2008 Paper

Effects of spacer growth temperature on the optical properties of quantum dot laser structures

N. Hasbullah, J. S. Ng, H. Y. Liu, M. Hopkinson, J. P. David, T. Badcock, D. Mowbray, A. Sanchez, R. Beanland

Proceedings Volume 6800, 68000U (2008) https://doi.org/10.1117/12.759663

KEYWORDS: Electroluminescence, Temperature metrology, Gallium arsenide, Quantum wells, Indium arsenide, Transmission electron microscopy, Quantum dots, Gallium, Quantum dot lasers, Optical properties

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Proceedings Article | 22 March 2007 Paper

Maximising the gain: optimizing the carrier distribution in InGaAs quantum dot lasers

Peter Smowton, Ian Sandall, David Mowbray, Hui-Yun Liu, Mark Hopkinson

Proceedings Volume 6468, 646817 (2007) https://doi.org/10.1117/12.702733

KEYWORDS: Absorption, Semiconducting wafers, Transparency, Quantum dots, Indium gallium arsenide, Quantum dot lasers, Gallium arsenide, Temperature metrology, Doping, Laser damage threshold

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Proceedings Article | 3 October 2006 Paper

High power and very low noise operation at 1.3 and 1.5 um with quantum dot and quantum dash Fabry-Perot lasers for microwave links

Patrick Resneau, Michel Calligaro, Michel Krakowski, Huiyun Liu, Mark Hopkinson, André Somers, A. Forchel, Johann Peter Reithmaier

Proceedings Volume 6399, 63990K (2006) https://doi.org/10.1117/12.689797

KEYWORDS: Microwave radiation, Quantum dot lasers, Quantum wells, Quantum dots, Gallium arsenide, Laser damage threshold, High power lasers, Laser applications, Fabry–Perot interferometers, Waveguides

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Proceedings Article | 14 April 2006 Paper

High performance 1.3μm InAs/GaAs quantum dot lasers with low threshold current and negative characteristic temperature

H. Liu, T. Badcock, K. Groom, M. Hopkinson, M. Gutiérrez, D. Childs, C. Jin, R. Hogg, I. Sellers, D. Mowbray, M. Skolnick, R. Beanland, D. Robbins

Proceedings Volume 6184, 618417 (2006) https://doi.org/10.1117/12.662499

KEYWORDS: Gallium arsenide, Indium arsenide, Continuous wave operation, Laser damage threshold, Modulation, Doping, Scanning probe lithography, Coating, Quantum dots

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Proceedings Article | 14 April 2006 Paper

Dilute nitride-based 1.3μm high performance lasers

P. Navaretti, C. Jin, H. Liu, R. Airey, M. Hopkinson

Proceedings Volume 6184, 61840D (2006) https://doi.org/10.1117/12.663228

KEYWORDS: Quantum wells, Nitrogen, Laser damage threshold, Plasma, Indium, Transparency, Temperature metrology, Optical properties, Luminescence, Gallium arsenide

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Proceedings Article | 22 February 2006 Paper

Characterisation of modulation doped quantum dot lasers

Peter Smowton, Ian Sandall, Craig Walker, John Thomson, Angela Sobiesierski, Tom Badcock, David Mowbray, Hui-Yun Liu, Mark Hopkinson

Proceedings Volume 6133, 61330T (2006) https://doi.org/10.1117/12.650682

KEYWORDS: Doping, Transparency, Absorption, Quantum dots, Modulation, Quantum wells, Laser damage threshold, Gallium, Semiconductor lasers, Gallium arsenide

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Proceedings Article | 7 February 2006 Paper

Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells

S. Ray, K. Groom, M. Beattie, H. Liu, M. Hopkinson, R. Hogg

Proceedings Volume 6129, 612907 (2006) https://doi.org/10.1117/12.644799

KEYWORDS: Indium, Quantum dots, Light emitting diodes, Quantum wells, Modulation, Gallium arsenide, Optical coherence tomography, Indium arsenide, Gallium

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Proceedings Article | 7 July 2005 Paper

Influence of structure and defects on the performance of dot-in-well laser structures

M. Gutierrez, M. Hopkinson, H. Y. Liu, M. Herrera, D. Gonzalez, R. Garcia

Proceedings Volume 5840, (2005) https://doi.org/10.1117/12.608955

KEYWORDS: Gallium arsenide, Indium arsenide, Transmission electron microscopy, Indium gallium arsenide, Indium, Gallium, Quantum wells, Quantum dots, Atomic force microscopy, Photomicroscopy

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Proceedings Article | 13 April 2005 Paper

Time-resolved photoluminescence measurements of InAs self-assembled quantum dots

Sara Pellegrini, Gerald Buller, Leonid Karachinsky, A. Shkolnik, Nikita Gordeev, Georgy Zegrya, Vadim Evtikhiev, Ian Sellers, Maurice Skolnick, H. Liu, Mark Hopkinson

Proceedings Volume 5725, (2005) https://doi.org/10.1117/12.587846

KEYWORDS: Luminescence, Aluminum, Quantum dots, Indium arsenide, Temperature metrology, Gallium arsenide, Picosecond phenomena, Gallium, Sensors, Time metrology

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Proceedings Article | 1 April 2005 Paper

Growth and characterization of multiple layer quantum dot lasers

Peter Smowton, Craig Walker, Ian Sandall, Ian Sellers, David Mowbray, Hui-Yun Liu, Marina Gutierrez, Mark Hopkinson

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.593278

KEYWORDS: Gallium arsenide, Absorption, Gallium, Quantum dots, Transmission electron microscopy, Quantum wells, Multilayers, Quantum dot lasers, Laser damage threshold, Semiconductor lasers

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