Standard Model Based OPC is based on resist and after etch CD measurements. In the case of non-linear photo-etch bias due to the etch microloading effect two-dimensional configuration can be wrongly corrected by the OPC model and hence lead to possible Si bridging. This paper reports a geometrical model for the determination of potential bridging in silicon trench structures that depends on the proximity of neighboring features. The model shows a possibility to detect and correct the post OPC data base by taking into account the non-linear effect caused by the non linear etch microloading. This approach can at the end leave the OPC model with a more straightforward photo resist model (and prevent the need to recreate a new OPC model), awhile-adding additional step of correction just in the locations of killer
effects like bridging may occur.
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