KEYWORDS: Single photon avalanche diodes, Monte Carlo methods, Quenching, Simulations, Stochastic processes, Modeling, Ionization, Power consumption, Picosecond phenomena, Capacitance
We present a study of the main SPAD figures of merit using a multiscale approach, from Monte Carlo simulations to SPICE simulations. We explore novel stochastic approaches capable of predicting accurately experimental measurements such as the Breakdown Probability, and the jitter. Additionally, the SPAD avalanche dynamics that is a stochastic process, is discussed within a transient Monte Carlo simulation perspective. We also derived a VerilogA model, making possible the analysis of the stochastic responses of the SPAD, including the buildup of the avalanche but also its quench. This latter quench probability of these diodes once in avalanche, rarely discussed in literature, is related to the dynamics of the voltage change of the floating cathode node. If the cathode voltage recovery (after the debiasing due to the quench circuit) is quicker than the time needed for the carrier evacuation within the avalanche junction, small additional avalanches can occur.
Next-generation BSI CMOS Imager Sensors are strongly driven by novel applications in depth sensing, mainly operating in the NIR (940nm) spectrum. As a result, the need for higher pixel sensitivity while shrinking pixel pitch is more present than ever. In this work, we present a new technology platform based on ad-hoc nano diffractor geometries, integrated in the Back Side of BSI CIS that allow to drastically improve the QE of the sensor for pitches varying from 10 μm down to 2.2 μm, co-optimized for both optical and electronic pixel performance.
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