Prof. James Kolodzey Profile

Prof. James Kolodzey

Charles Black Evans Professor at Univ of Delaware

SPIE Involvement:

Author

Proceedings Article | 24 September 2013 Paper

Terahertz emitters based on intracenter transitions in semiconductors

James Kolodzey, Jay Gupta

Proceedings Volume 8846, 88460E (2013) https://doi.org/10.1117/12.2024447

KEYWORDS: Terahertz radiation, Silicon carbide, Semiconductors, Ionization, Photons, Silicon, Electrons, N-type semiconductors, P-type semiconductors, Gallium nitride

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SPIE Journal Paper | 1 May 2011

Sensitivity of a vanadium oxide uncooled microbolometer array for terahertz imaging

Matthew Coppinger, Nathan Sustersic, James Kolodzey, Toomas Allik

OE, Vol. 50, Issue 05, 053206, (May 2011) https://doi.org/10.1117/12.10.1117/1.3574066

KEYWORDS: Microbolometers, Terahertz radiation, Black bodies, Sensors, Cameras, Millimeter wave imaging, Temperature metrology, Vanadium, Oxides, Interference (communication)

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SPIE Journal Paper | 1 October 2003

Fabrication of high-fill-factor photonic crystal devices on silicon-on-insulator substrates

Sriram Venkataraman, Janusz Murakowski, Thomas Adam, James Kolodzey, Dennis Prather

JM3, Vol. 2, Issue 04, (October 2003) https://doi.org/10.1117/12.10.1117/1.1610477

KEYWORDS: Etching, Silicon, Waveguides, Reactive ion etching, Deep reactive ion etching, Plasma, Photomasks, Custom fabrication, Anisotropic etching, Ions

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Proceedings Article | 11 June 2003 Paper

Stimulated THz emission of acceptor-doped SiGe/Si

Miron Kagan, Igor Altukhov, Elena Chirkova, Konstantin Korolev, Valery Sinis, R. Troeger, S. Ray, James Kolodzey

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.514394

KEYWORDS: Terahertz radiation, Quantum wells, Boron, Silicon, Germanium, Ionization, Electronics, Quantum cascade lasers, Optical resonators, Heterojunctions

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Proceedings Article | 11 June 2003 Paper

Terahertz emitting devices based on intersubband transitions in SiGe quantum wells

T. Adam, R. Troeger, S. Ray, U. Lehmann, James Kolodzey

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.514391

KEYWORDS: Silicon, Terahertz radiation, Quantum wells, Electroluminescence, Fabrication, FT-IR spectroscopy, Terahertz technology, Superlattices, Phonons, Germanium

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SPIE Journal Paper | 1 February 2003

Influence of support structure on microdisk resonator performance

Shouyuan Shi, Dennis Prather, Liuqing Yang, James Kolodzey

OE, Vol. 42, Issue 02, (February 2003) https://doi.org/10.1117/12.10.1117/1.1534597

KEYWORDS: Resonators, Finite-difference time-domain method, Free space, Semiconductors, Semiconductor lasers, Refractive index, Dielectrics, Electromagnetism, Quantum cascade lasers, Numerical analysis

Proceedings Article | 12 January 1998 Paper

MBE growth kinetics and thermal stability of Si1-x-yGexCy/Si heterostructures

Michael Dashiell, Leonid Kulik, Dmitry Hits, James Kolodzey

Proceedings Volume 3278, (1998) https://doi.org/10.1117/12.298210

KEYWORDS: Silicon, Heterojunctions, Carbon, X-rays, Silicon carbide, Germanium, Chemical species, Annealing, Diffusion, Absorbance

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Proceedings Article | 25 April 1997 Paper

Ge1-xCx/Si heterojunction photodiode

Xiaoping Shao, Sean Rommel, Bradley Orner, H. Feng, Michael Dashiell, James Kolodzey, Paul Berger

Proceedings Volume 3007, (1997) https://doi.org/10.1117/12.273850

KEYWORDS: Diodes, Heterojunctions, Silicon, Carbon, Photodiodes, External quantum efficiency, Germanium, Transmission electron microscopy, Metals, Semiconductor lasers

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Proceedings Article | 25 April 1997 Paper

Optical constants of B- and P-doped Ge1-yCy alloys on Si substrates

Bradley Orner, F. Chen, Dmitry Hits, Michael Dashiell, James Kolodzey

Proceedings Volume 3007, (1997) https://doi.org/10.1117/12.273849

KEYWORDS: Absorption, Refractive index, Silicon, Doping, Germanium, Refraction, Chlorine, Waveguides, Modulators, Transmittance

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Showing 5 of 9 publications

Conference Committee Involvement (5)

Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense

25 April 2011 | Orlando, Florida, United States

Terahertz Physics, Devices, and Systems IV: Advanced Applications in Industry and Defense

5 April 2010 | Orlando, Florida, United States

Terahertz Physics, Devices, and Systems III: Advanced Applications in Industry and Defense

14 April 2009 | Orlando, Florida, United States

Terahertz Physics, Devices, and Systems II

11 September 2007 | Boston, MA, United States

Terahertz Physics, Devices, and Systems

2 October 2006 | Boston, Massachusetts, United States

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