State of the art production single print lithography for contact is limited to ~43-44nm half-pitch given the
parameters in the classic photolithography resolution formula for contacts in 193 immersion tool (k1 ≥ 0.3,
NA = 1.35, and λ = 193nm). Single print lithography limitations can be overcome by (1) Process /
Integration based techniques such as double-printing (DP), and spacer based self-aligned double patterning
(SADP), (2) Non-standard printing techniques such as electron-beam (eBeam), extreme ultraviolet
lithography (EUVL), nano-imprint Lithography (NIL). EUV tools are under development, while nanoimprint
is a developmental tool only. Spacer based SADP for equal line/space is well documented as
successful patterning technique for 3xnm and beyond. In this paper, we present an adaptation of selfaligned
double patterning process to 2-D regular 32/32nm contact/space array. Using SADP process, we
successfully achieved an equal contact/space of 32/32nm using 193 immersion lithography that is only
capable of 43-44nm resolvable half-pitch contact printing. The key and unique innovation of this work is
the use of a 2-D (x and y axis) pillar structure to achieve equal contact/space. Final result is a dense contact
array of 32nm half-pitch in 2-D structure (x and y axis). This is achieved on simplified stack of Substrate /
APF / Nitride.
Further transfer of this new contact pattern from nitride to the substrate (e.g., Oxide, APF, Poly, Si...) is
possible. The technique is potentially extendible to 22/22nm contact/space and beyond.
Self-Aligned Double patterning (SADP) technology has been identified as the main stream patterning technique for
NAND FLASH manufacturers for 3xnm and beyond. This paper demonstrates the successful fabrication of 32nm halfpitch
electrical testable NAND FLASH wordline structures using a 3-mask flow. This 3-mask flow includes one critical
lithography step and two non-critical lithography steps. It uses a positive tone (spacer as mask) approach to create 32nm
doped poly wordlines. Electrical measurements of line resistance are performed on these doped poly wordlines to
demonstrate the capability of this patterning technique. Detailed results and critical process considerations, including
lithography, deposition and etch, will be discussed in this paper.
We have developed a unique resist stabilization process for double patterning that uses 172 nm UV curing to 'freeze' a first photoresist pattern prior to application and patterning of a second photoresist film. 172 nm cure offers many potential advantages over other resist stabilization processes, including improved pattern fidelity vs. other cure processes and track-based implementation scenarios that are relatively simple, compact, and inexpensive. Assessment of 172 nm double imaging process requirements and limitations indicates that pattern distortions in the 'frozen' first photoresist may arise during all 2nd patterning steps, including coating, exposure, and development. Careful optimization to maximize overall pattern fidelity is needed. Process optimization using a conventional 193 nm photoresist suggests that pattern freeze approaches based on resist cure are best suited to extremely regular structures due to line-end and other resist distortions. Nevertheless, the method allows cross-grid contact printing at lithographic k1 = 0.385.
Self-Aligned Double Patterning (SADP) scheme is considered as one of the most promising lithographic techniques to
meet the challenges for aggressive flash 32 nm semiconductor technology node and beyond.
Monitoring the SADP stages implies the necessity to use metrology methods that meet advanced technology nodes
requirements.
One important growing metrology factor is the Line Edge Roughness (LER). This factor is most relevant due to the
unique processing of the outer vs. inner edges in the SADP process.
The aim of the present study is to evaluate the right metrics to tightly monitor SADP process, including the roughness
behavior of the features on SADP layers, and seek correspondence of LER characteristics between SADP sequential
process stages.
Additional element of this study will be to examine the performance of CD-SEM roughness analysis on small features,
with the usage of improved LER measurement method that takes into account the contribution of SEM imaging noise to
the obtained LER values.
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