Jan B.P. van Schoot, PhD, is Director of System Engineering and Technical Expert at ASML, based in Veldhoven, The Netherlands.
Van Schoot studied Electrical Engineering at Twente University of Technology. He received his PhD in Physics on the subject of non-linear optical waveguide devices in 1994 and held a post-doc position studying waveguide based electro-optical modulators.
He joined ASML in 1996 and was Project Leader for the Application of the first 5500/500 scanner and its successors up to 5500/750. In 2001 he became Product Development Manager of Imaging Products (DoseMapper, Customized Illumination). In 2007 he joined the dept of System Engineering. He was responsible for the Optical Columns of the 0.25NA and 0.33NA EUV systems. After this he worked on the design of the EUV source. He was the study leader of the High-NA EUV system and is now responsible for the High-NA optical train.
He holds over 40 patents and presents frequently at conferences about photo lithography.
Van Schoot studied Electrical Engineering at Twente University of Technology. He received his PhD in Physics on the subject of non-linear optical waveguide devices in 1994 and held a post-doc position studying waveguide based electro-optical modulators.
He joined ASML in 1996 and was Project Leader for the Application of the first 5500/500 scanner and its successors up to 5500/750. In 2001 he became Product Development Manager of Imaging Products (DoseMapper, Customized Illumination). In 2007 he joined the dept of System Engineering. He was responsible for the Optical Columns of the 0.25NA and 0.33NA EUV systems. After this he worked on the design of the EUV source. He was the study leader of the High-NA EUV system and is now responsible for the High-NA optical train.
He holds over 40 patents and presents frequently at conferences about photo lithography.
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A novel, anamorphic lens design, has been developed to provide the required Numerical Aperture; this lens will be paired with new, faster stages and more accurate sensors enabling Moore’s law economical requirements, as well as the tight focus and overlay control needed for future process nodes.
The tighter focus and overlay control budgets, as well as the anamorphic optics, will drive innovations in the imaging and OPC modelling, and possibly in the metrology concepts.
Furthermore, advances in resist and mask technology will be required to image lithography features with less than 10nm resolution.
This paper presents an overview of the key technology innovations and infrastructure requirements for the next generation EUV systems.
We show that a new definition of the Mask Error Factor needs to be used in order to describe correctly the property introduced by the anamorphic optics. Moreover, for both 1-Dimensional (1D) and 2-Dimensional (2D) features the reticle writing error in the low demagnification direction X is more critical than the error in high demagnification direction Y.
The effects of the change in demagnification on imaging are described on an elementary case, and are ultimately linked to the basic physical phenomenon of diffraction.
In this study, we have proven by simulations and experiments that alternative mask technologies can lower mask 3D effects and therefore have the potential to improve the imaging of critical EUV layers.
We have performed an experimental imaging study of a prototype etched ML mask, which has recently become available. This prototype alternative mask has only half the ML mirror thickness (20 Mo/Si pairs) and contains no absorber material at all. Instead, the ML mirror is etched away to the substrate at the location of the dark features. For this etched ML mask, we have compared the imaging performance for mask 3D related effects to that of a standard EUV mask, using wafer exposures at 0.33 NA. Experimental data are compared to the simulated predictions and the benefits and drawbacks of such an alternative mask are shown. Besides the imaging performance, we will also discuss the manufacturability challenges related to the etched ML mask technology.
This course provides attendees with an overview of the advances in lithography systems for High NA and an understanding of their inner workings, the technology and basic principles. The primary goal of the course is to discuss the main components of a High NA scanner, understand their function and link them to critical performance metrics. The commonalities and main differences between DUV and EUV scanners will be discussed, and the insights into High NA, next generation of EUV lithography systems will be given.
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