Self-assembled monolayers (SAMs) of alkyl silane compounds have been used for modifying gate dielectrics surface
of organic field-effect transistors (OFETs) and they have frequently shown improvement of FET performances. In this
paper we deposited alkyl silane SAMs by simple spin-coating technique onto Si/SiO2 substrates. Spin-cast
octadecyltrimethoxysilane (OTMS) SAMs had ultra smooth crystalline surface and provided an excellent dielectric
surface for OFETs. In fact on the OTMS SAM treated dielectric, pentacene OFETs showed hole mobilities over 2.0
cm2/Vs and electron mobilties over 1.0 and 5.0 cm2/Vs were demonstrated for 3,4:9,10-perylene diimide derivative and
C60, respectively. Fabrication technique and characterizations of the OTMS SAMs is described.
Solution-processible thiophene/phenylene -based oligomer derivatives with different end substituents are presented as p-type
semiconducting materials in OFETs. These films were deposited on OTS-treated SiO2/Si or polymeric
bivinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB)/ITO/quartz substrates, via drop-casting and spin-casting.
Synchrotron-based grazing-incidence X-ray diffraction and atomic force microscopy reveals that both drop- and spin-cast
films have highly crystalline structures with edge-on molecules and parallel π-π stacking conjugated planes with
respect to the substrate. In particular, temperature-dependent solubility of these materials can give a strategy for highly
ordered crystalline structure in spin-cast films grown on cooler substrates, when compared to warmed solutions. Field-effect
mobilities of these spin-cast films in a top-contacted electrode OFETs with BCB dielectrics are reached as high as
~0.01 cm2/Vs.
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