Mach-Zehnder Interferometer (MZI) topological cascade architectures, which allow linear transformations between multiple channels simultaneously, are gradually becoming a powerful tool for photonics and have a place in optical neural networks. This paper focuses on the theoretical analysis and software simulation of two unitary matrix architectures for a 6×6 MZI-based optical processor: the triangular architecture and the rectangular architecture. Both unitary arrays are composed of fifteen reconfigurable MZI units, each of which is comprised of two adjustable phase shifters and two 3-dB directional couplers. For a given neural network training application, the value of each phase shifter can be calculated from the matrix factorization process. The theoretical derivation is verified through simulations using the advanced software Max-Optics. When compared with Lumerical INTERCONNECT, the maximum error is less than 0.00044%, and the simulation time is reduced by 3 times.
The gas sensor based on Micro-electromechanical system (MEMS) technology has the advantages of high sensitivity, small size, good batch uniformity and low power consumption. It has become an important development direction of the next-generation semiconductor gas sensor. This paper focuses on the design of the micro-hotplate chip for MEMS gas sensors. A type of micro-hotplate chip design with an isothermal hot area (±15 K) accounting for 90% is demonstrated through both the thermal theory analysis and the finite element simulation of the physical field, effectively resolving the issue of broad area uniform heating in the micro-sized chip in MEMS gas sensor designs. The infrared thermal image test results show the temperature of four points from edge to center of heating area are 295.5 °C, 287.5 °C, 289 °C, 294.8 °C respectively, which indicates the heat uniformity of micro-hotplate. Due to the limitation of a low temperature film deposition process, the maximum stress of the micro-hotplate films is about 1500 MPa, and at 375 °C operating temperature, the power consumption per area is only 4.5×10-4 mW/μm2.
As the complexity of optoelectronic integrated circuits (OEICs) develop, the need for an accurate and efficient compatible simulation environment that supports both photonics and electronics becomes increasingly critical. This paper addresses the demand by proposing an approach that leverages Verilog-A language to build equivalent circuit models and compact models for photonic devices. Passive components, including couplers and waveguides, are modeled using compact models. Active components, such as CW lasers, are realized through the adoption of equivalent circuit models. Additionally, a depletion-type phase shifter is separated in two parts: the electrical part for parasitic parameters and the p-n junction are presented with RC components, while the optical characteristics, influenced by electrical modulation, are achieved through the use of compact models. The proposed compatible system design scheme, which consists of Verilog-A models, can be analyzed in the frequency-domain using EDA software. The simulation results demonstrate a mean absolute percentage error (MAPE) of less than 0.003% when compared to those obtained from commercial interoperable design software. Therefore, this study effectively addresses the challenge of incompatible design and simulation for OEIC, and providing strong evidence that OEIC design can be achieved in a unified EDA platform.
We demonstrate a method for extracting the spectral parameters of the distributed feedback (DFB) laser based on an adaptive differential evolution algorithm. By using the multi-objective optimization method to fit the measured spectrum, the relevant-parameters of the spectrum can be rapidly and accurately extracted. Experimental results show that the proposed method can obtain high accuracy of DFB laser spectrum parameters extraction. Moreover, this method is suitable for a wide range of applications, including spectrum fitting and other parameters extraction.
High-speed (25 Gb/s) oxide-confined VCSELs operating at 850 nm have gained widespread use in data communications. However, ensuring their reliability remains a significant challenge. This study investigates the reliability and failure modes of 25 Gb/s 850 nm oxide-confined VCSELs through accelerated life testing and failure analysis. The high-stress life tests are conducted under various temperatures and bias currents. Aging data over a finite period are extrapolated using a power function to determine the life corresponding to the failure criterion. The median life is obtained by fitting a log-normal distribution function to the device life under different stress conditions. The precise junction temperature is determined using the spectral drift method, allowing for the extraction of key life parameters: activation energy (Ea) and current acceleration factor (n). The findings demonstrate a significant increase in the activation energy of InGaAs-based 25 Gb/s VCSELs compared to GaAs-based 10 Gb/s VCSELs. Additionally, high-resolution transmission electron microscopy (TEM) is employed to analyze failure samples subjected to three types of stress tests: high-temperature and high-humidity with bias aging, electrostatic discharge (ESD) damage, and high-temperature and high-current aging. Three main failure modes are identified and analyzed: dark line defects, electrostatic breakdown damage, and dark spot defects. These failure modes predominantly arise from the combined effects of the oxide layer's shrinkage stress and the InGaAs quantum well's compression stress within the device. This study provides detailed insights into the reliability and failure modes of 25 Gb/s 850 nm oxide-confined VCSELs, enhancing our understanding of degradation mechanisms in high-speed VCSELs featuring strained InGaAs quantum wells.
Oxide Vertical Cavity Surface Emitting Lasers(VCSELs) are widely used in high-speed optical communication applications. An important specification for VCSELs is field reliability. However, oxide VCSELs are vulnerable to dislocation defect due to the inherent reasons of materials system and structural design. In order to better understand the failure modes and causes of oxide VCSELs, improve the reliability of the chip and reduce the failure rate, we summarize and analyze the most common failure modes, causes observed in oxide VCSELs from five aspects of materials system, structure design, manufactu
An ultra-compact 1310 / 1550 nm wavelength demultiplexer based on multimode interference (MMI) coupler assisted by subwavelength gratings (SWGs) is proposed. Two parallel SWG-based slots are inserted into the MMI section symmetrically. Equivalent refractive index and width of the SWG are designed properly to reduce the device length while keeping a low insertion loss (IL) and high extinction ratio (ER). In this way, the device length shrinks to 34.48 μm. The performance when the device working as a multiplexer and as a demultiplexer are both investigated. From the transmission spectrum, ILs of <0.24 dB, ERs of larger than 15.2 dB and broad 1-dB bandwidths of larger than 90 nm are obtained for the two wavelengths.
The modulation frequency characteristics of the Q-switched envelope in a doubly Q-switched and mode-locked Nd:GGG laser with an acousto-optic modulator (AOM) and Cr4+:YAG saturable absorber are given. At a fixed incident pump power, the repetition rates of the Q-switched envelope and the related laser characteristics versus the modulation frequency of AOM for different small signal transmissions of Cr4+:YAG saturable absorbers have been measured. The experimental results show that the repetition rates of the Q-switched envelope, the average output power, the average peak power, and the pulse widths of the Q-switched envelopes are subharmonics of the modulation frequency at a fixed incident pump power. Furthermore, the mechanism for these behaviors is discussed.
Graphene is used as an ideal platform for plasmonic optical devices due to its unique electrical and optical characteristics. We proposed a unique effective index method to evaluate a graphene-based half Maxwell fish-eye (HMFE) plasmonic lens on a single flake of graphene, which can focus a surface plasmon polariton plane wave and transform into a spherical wave. Similar to traditional optics, the proposed method can be used to investigate the focusing performance of an HMFE lens versus different parameters, including the incident frequencies, the discrete semiring numbers, the chemical potentials, and the size of the proposed lens. In addition, we use two proposed lenses to build an optical-coupling element, which can transform the beam of a plane wave into a different beam width. The proposed effective index method can be used as a reference in designing plasmonic optical devices with a variable effective index profile on a flake of graphene. The finite element method is employed to realize the numerical simulation, which demonstrates results almost consistent with our design methodology.
We study the contribution of Surface-plasmons coupling with a single dipole to enhance the emitter emission. When the
Ag film is inserted into GaN, the emission efficiency of single dipole in GaN can be enhanced greatly. With 3D-FDTD
method, the numerical simulation results demonstrate that the SPs play a key role in enhancement light emitter efficiency.
Furthermore, SPs is sensitive not only to the thickness and refractive index of dielectric, but also to the geometry and
dispersion model of Ag film. By changing the parameters of GaN and Ag film, the location of the enhancement peak of
the emission efficiency in the visible region can be controlled. According to the simply optimal parameters, about 9
times enhancement at 470nm occurs. Our results are of very importance for improving the light-emitting devices of GaN.
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