Antimonide high-power semiconductor laser diodes emitting at 2μm have broad prospects in many fields, such as tunable diode laser absorption spectroscopy. However, power is an important indicator for the application of antimonide semiconductor laser diodes. In this paper, we reported the high-power antimony laser diodes emitting around 2μm achieved in our group. The maximum optical power is 1.001W with injected current 3.04A at working temperature 20℃.
As one of the primary products in the field of semiconductor lasers, GaAs-based semiconductor laser devices with an 808nm wavelength are widely applied in various industries such as industrial, medical, and scientific research. These devices possess substantial market potential. This paper reports on the development of a high-power array semiconductor laser device emitting at 808nm wavelength, achieved by our research team. At a temperature of 25°C, with a filling factor of 30% and an injection current of 50A, the maximum output power reaches 55.31W, and the photoelectric conversion efficiency is 58.74%. This device demonstrates exceptional emission performance.
KEYWORDS: Semiconductor lasers, Antimony, High power lasers, Semiconducting wafers, Epitaxy, Scanning electron microscopy, Quantum technologies, Quantum numbers, Fabrication, Windows
Antimony laser diodes emitting at 2 μm have shown great potential due to the extraordinary performance in gas detecting and other promising fields. However, it is difficult to increase the power of antimony laser diodes, the applications of which would be restricted greatly. In this paper, we report the watt-level antimony laser diodes emitting at 2 μm developed by our group, and the maximum output power can achieve about 1.082W at 20℃ with the injection current set as 5A, showing excellent performance.
High output power GaSb-based diode lasers are critical component for 2μm laser systems. We compare four structures with different layer thickness combinations to optimize lower cladding layer thickness. Four structures have similar optical confinement factor of active region. As the lower cladding layer thins, the threshold current increases and the series resistance slightly reduces. Among the four structures, laser with 370nm waveguide layer and 1200nm n-type cladding layer functions the best. An output power of 1.21W at 3A is obtained, the threshold current is 0.11A, the series resistance is 0.25Ωthe slope efficiency is 0.42W/A.
GaSb-based narrow Ridge Waveguide (RW) laser diodes providing high optical power with low lateral beam divergence single-transverse-mode operation are fabricated and characterized. The typical Separate-Confinement-Heterostructure (SCH) Multi-Quantum-Well (MQW) structure is grown by the solid-state Molecular Beam Epitaxy (MBE). The 1 mm long uncoated RW lasers yield single-transverse-mode output power exceeding 170 mW in the 1950 nm wavelength range under continuous-wave (cw) operation at an injection current of 800 mA and room temperature of 20 ℃. The shallow-etched 7 μm width RW design produces a lateral beam divergence angle as narrow as 9° Full Width at Half Maximum (FWHM) with an excellent beam quality of M2 factor < 2 at the maximum output power, enabling it for simple and inexpensive bulk coupling into the typical SM1950 or PM1950 fiber which has a core diameter of 7 μm and numerical aperture (NA) of 0.2. The RW lasers with high output power, good beam quality, and low divergence are promising candidates for a wide range of demanding and advanced applications including pumping fiber amplifiers and solid-state lasers, seeding external cavity lasers, and frequency conversion.
High power mid-infrared GaSb-based lasers are desired for many applications, however, the self-heating in the active region is still one of the main influence factors for practical application. In this paper, we report on fabrication and characterization of high-power GaSb-based lasers. The temperature dependence of output performance of the device was investigated. Due to the high quality of epitaxy and wide waveguide design, the lasers exhibited a high-power capability from 288 K to 318 K. Devices with a cavity length of 1.5 mm and an aperture of 100 μm delivered a power of 1.46 W at a current of 7 A at 288 K and remains 1.10 W at 318 K under CW operation limited by thermal rollover. The characteristic temperature T0 is 151 K and 68 K below and above 298 K, respectively.
GaSb-based InGaSb/AlGaAsSb double quantum well separate confinement heterostructure laser diodes had been grown by molecular-beam-epitaxy. 1000×100 μm2 stripe-type waveguide LDs with facets coated were fabricated and characterized. The high output power of 1.107 W and peak wavelength of 2.09 μm had got with injected current 5 A at working temperature 20℃. The maximum wall plug efficiency was 28.8% with injection current 0.55 A.
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