Ms. Jie Zhang Profile

Jie Zhang

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Proceedings Article | 31 August 2021 Paper

Pulse shape controlled MOPA fiber laser for marking of Si wafer

Lingling Zhang, Tianjiao Shu, Guoqi Li, Yuan Chen, Yuanchao Du, Xuanjun Zhang, Jie Zhang

Proceedings Volume 11907, 119072A (2021) https://doi.org/10.1117/12.2603114

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Pulsed lasers were used extensively in material processing including cutting, drilling and marking. The temporal shape and duration of the pulse were important in optimizing the material processing quality. The flexible parameters of MOPA pulsed fiber laser can offer a broad range of material response characteristics. In this report, a MOPA pulsed fiber laser was configured with pulse duration from 2 to 500 ns and PRF that ranged from single shot to 4000kHz.Pulse energy up to 1mJ to investigate independently the contributions of each of these parameters on the marking process of Si wafer. Various experiments were presented to require the high quality marking on Si wafer. Topography evolution pictures of dot were taken and the depths were measured. Experimental results showed that single pulse energy had a significant influence on the threshold of the visible mark. Pulse numbers had more impact on the dot topography. Pulse energy and pulse duration had more influence on the mark depth. In order to control finely the mark depth, single pulse energy and pulse numbers should be optimized.

Proceedings Article | 31 August 2021 Paper

Study on the process of laser marking for silicon wafer by 1060nm-MOPA laser

Tianjiao Shu, Lingling Zhang, Guoqi Li, Yuanchao Du, Yuan Chen, Xuanjun Zhang, Jie Zhang

Proceedings Volume 11907, 119072C (2021) https://doi.org/10.1117/12.2603120

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The silicon material is very sensitive to the change of the laser, and a small change in energy will cause a relatively large change in the morphology of the mark. Therefore, it is a great challenge to produce uniform and high-quality laser marks on silicon wafers. A new Master Oscillator Power-Amplifier (MOPA) fiber laser with independently adjustable pulse width and frequency have a wide adjustable parameter window. In this paper, a new type of MOPA fiber laser is used to study the marking process on silicon wafers. By changing average power (defined by the active current set point), pulse repetition frequency (PRF) and pulse duration of the laser (i.e., the number of pulses), dot matrix marking on the wafer, using the Keyence VHX-6000 optical microscope to determine the cleanliness and surface topography of the wafer surface to evaluate. Studies have shown that the influence of the output instability of the fiber laser on the marking quality can be reduced by increasing the number of pulses under the condition of stable and low power. At the same time, the resolution of the single pulse energy of the laser is improved by changing the laser PRF, and then the control precision of the energy is improved, so as to realize the high-quality silicon wafer laser marking process with uniform and stable marking morphology.

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