As a result of repeated cleanings and exposure effects such as chrome migration or MoSi oxidation some
photomasks in the semiconductor fabs exhibit changes in critical dimension uniformity (CDU) over time.
Detecting these effects in a timely manner allows for better risk management and process control in
manufacturing. By monitoring changes in film reflectance intensity due to the various degradation mechanisms
it is possible to predict when they may begin to influence across chip line width variations (ACLV). By
accurately predicting the magnitude of these changes it is possible for semiconductor manufacturers to replace
the photomasks before they have an impact on yields. This paper looks at possible causes of CDU variations on
reticles during use and how this information might be used to improve or monitor reticle CDU changes over
time.
Critical dimension uniformity (CDU) is an important parameter for photomask and wafer manufacturing. In
order to reduce long-range CD variation, compensation techniques for mask writers and scanners have been
developed. Both techniques require mask CD measurements with high spatial sampling. Scanning electron
microscopes (SEMs), which provide CD measurements at very high precision, cannot in practice provide the
required spatial sampling due to their low speed. In contrast mask inspection systems, some of which have the
ability to perform optical CD measurements with very high sampling frequencies, are an interesting alternative.
In this paper we evaluate the CDU measurement results with those of a CD-SEM.
Wafer overlay is one of the key challenges for lithography in semiconductor device manufacturing, this becomes
increasingly challenging following the shrinking of the device node. Some of Low k1 techniques, such as Double
Exposure add additional burden to the overlay margin because on most critical layers the pattern is created based on
exposures of 2 critical masks. Besides impact on overlay performance, any displacement between those two exposures
leads to a significant impact on space CD uniformity performance as well. Mask registration is considered a major
contributor to within-field wafer overlay.
We investigated in-die registration performance on a critical poly-layer reticle in-depth, applying adaptive metrology
rules, We used Thin-Plate-Splinefit (TPS) and Fourier analysis techniques for data analysis. Several systematic error components were observed, demonstrating the value of higher sampling to control mask registration performance.
Current methodologies for determining pattern placement errors on production masks are based primarily on limited
sample sizes and Gaussian statistics. These methodologies and accepted practices may not be indicative of the true
nature of pattern placement errors actually occurring on the photomasks. Pattern placement errors can originate from a
variety of sources on e-beam generated photomasks. Random shot placement errors, localized charging and heating,
proximity effects, global charging, and writing strategies may all have an impact on overall pattern placement errors. It
is suspected therefore that pattern placement errors on photomasks are not all well approximated as Gaussian, but
include a number of significant errors with unique spatial signatures that need to be addressed differently. This paper
investigates different measurement sampling strategies on a single leading edge poly layer to determine what level or
amount of measurements might be necessary to more accurately determine the probabilities of the true placement errors
on the photomask, and what spatially dependent components may or may not be accurately represented in the
measurements.
Double Patterning Lithography techniques place significantly greater demand on the requirements for pattern placement
accuracy on photomasks. The influence of the pellicle on plate bending is also a factor especially when the pellicle
distortions are not repeatable from substrate to substrate. The combination of increased demand for greater accuracy and
the influence of pellicle distortions are key factors in the need for high resolution through-pellicle in-die measurements
on actual device features. The above requirements triggered development of a new generation registration metrology tool
based on in-depth experience with the LMS IPRO4. This paper reports on the initial experimental results of DUV laser
illumination on features of various sizes using unique measurement algorithms developed specifically for pattern
placement measurements.
In performing SEM Critical Dimension (CD) measurements on photomasks in dense line and space arrays it is often
difficult to distinguish between whether a feature is a line or space. This is a result of tone shifts that occur affecting
contrast on target images. The inability to reliably differentiate lines and spaces leads to the inclusion of fliers, or
inaccurate measurements into automated measurement results. In an effort to overcome this phenomenon a new
algorithm has been developed to increase the robustness of the CD SEM measurements to insure reliable data
acquisition. This new algorithm takes into account apparent tone reversals on a variety of today's photomask material
types. This paper will detail the various elements of the new algorithm and show before and after test results of
improved recognition performance.
For next generation photomask lithography, improved resolution and precision are required to monitor lithography tools and photomask processes. The newly developed LWM9000 SEM Critical Dimension Scanning Electron Microscope (CD-SEM) for photomask applications will be presented. Its proprietary electron optics technology combined with an improved detection system leads to sub-nanometer CD measurement repeatability by almost completely eliminating the effect of charging and contamination. In an effort to minimize integration into production environments and to facilitate the ease of use the new CD-SEM utilizes a graphical user interface and data evaluation software based on Leica Microsystems’ LMS IPRO / LMS IPRO2. Presented in this paper is data showing leading edge CD measurement repeatability performance on chrome on glass substrates (COG), different types of phase shift masks (PSM), and resist plates. The virtual lack of charging in conjunction with a laser controlled stage, dramatically reduces the need for local feature alignment prior to CD measurement in most cases. The lack of need for local pattern alignment leads to increased throughput and high reliability during the measurement process. The standard system can be configured for manual loading or SMIF handling.
Process control in photomask manufacturing is crucial for improving and maintaining optimal yields. The LWM270DUV critical dimension (CD) measurement system is the first tool ever designed for photomask manufacturers that combines both UV (365 nm wavelength light) and DUV (248 nm wavelength light) for CD measurements. UV light illumination was integrated into the LWM270DUV to allow photomask makers to perform after etch inspection (AEI) on DUV resists minimizing exposure effects. The increased resolution of UV illumination allows for measurement of features as small as 300 nm. Improved measurement algorithms as well as improvements in the illumination system have reduced the uncertainty of measurements resulting in improved performance. This paper details recent measurement results of various feature types on different substrate types using UV transmitted light.
This work involved a demonstration of the infrastructure and the ability of mask-making equipment to produce 9 inch reticles. While the choices for this particular work made the timing and logistics long and complicated, we find that there currently exists adequate infrastructure to create 9 inch reticles and we have used this ability to produce several demonstration quality examples.
Continually shrinking features sizes coupled with tighter tolerances for critical dimensions and feature placement necessitate development of new metrology tools that can meet the demand for more precision and accuracy during the measurement process. With this in mind Leica Microsystems has developed a next general metrology system that is capable of fulfilling both the feature placement and critical dimension metrology requirements. This paper contains a brief description of the new system hardware and design changes incorporated into the Leica LMS IPRO2 as well as recent measurement data indicative of initial tool performance.
A new CD metrology system with 248 nanometer illumination is the subject of this paper. The system configuration and major component improvements is described. Test measurements on chrome-on-glass and attenuated phase shift masks were performed demonstrating improved CD linearity down to approximately 300 nm and long term repeatability performance in the 2 nm realm.
A physical two-dimensional Cartesian reference has been demonstrated using group theory principles pioneered by Michael Raugh. The first stage Cartesian self-calibration introduction to the microlithographic industry was developed by Stanford University, Hewlett Packard, and IBM San Jose using Leica's LMS-2000 and LMS-2020 platforms. Recently Leica developed a different method based on a similar theory to achieve a Cartesian calibration for their LMS-IPRO x-y metrology system. A review of these methods and a comparison of the results obtained between the methods are presented.
Metrology tool performance may be based on a number of different factors. Areas such as ease of use, user interface, throughput, long and short term precision, sub-micron linearity, and accuracy are features which may be evaluated. Some areas are subjective and not easily quantifiable. This paper is concerned with evaluating and measuring the areas which are quantifiable such as the tool's 'Gauge R&R' (reproducibility and repeatability), measurement time, long term precision, and reliability. Explanations of the measurement evaluation methods will be presented along with performance data that is indicative of the system's performance.
A new mask and wafer metrology tool is under final development at Leica to be launched in 1996. Recent performance data on the LMS IPRO system at Leica's development center shows precision and accuracy performance required for the 0.18 micrometers design rule device generation.
Recently Leica introduced a new X/Y Metrology system called the LMS 2020. Performance results indicate an approximate 30% improvement over the existing model--the LMS 2000. Through-put, design grid accuracy, and precision have all been incrementally improved to varying degrees. Information presented includes: brief background description of the tool, a description of the measurement algorithms used to obtain the data, and the specific performance results obtained through measurements on both photomasks and wafers.
KEYWORDS: Laser systems engineering, Temperature metrology, Metrology, Humidity, Photomasks, Laser metrology, Integrated circuits, Inspection, Process control, Control systems
Environmental changes in temperature, humidity, and pressure affect registration repeatability and accuracy.
Laser wavelength compensation electronics can reduce the effects of environmental fluctuations but not totally
eliminate them. When measuring distances as large as 120 mm to an accuracy of less than 50 urn even slight variations in
temperature and pressure will have adverse effects on registration repeatability and accuracy. Therefore, careful control
and monitoring of these factors is essential in maintaining a stable two dimensional measuring system.
In order to access these effects, parts of the environmental control system have been deactivated and the effects
observed. By correlating temperature, pressure, and humidity with fluctuations in output data, it is possible to identify
and characterize their individual effects. The magnitude of influence of each component varies with amount and duration
of change versus the system's ability to respond. Laser wavelength compensation effectiveness can be evaluated by
measuring oulput data changes versus environmental changes with and without the compensation system activated.
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