Complementary use of p-type organic and n-type oxide semiconductors is presented. First, we demonstrated
complementary circuits using low-voltage operating high performance pentacene and amorphous InGaZnO (a-IGZO)
thin-film transistors (TFTs). The field-effect mobilities of the pentacene and a-IGZO transistors are 0.6 and 17.1 cm2/V s,
respectively at an operating voltage of 10 V. A complementary inverter composed of these transistors exhibits good
voltage transfer characteristics with a high gain of ~56. A five-stage ring oscillator with the inverters yields an output
frequency of 200 Hz at 10 V, corresponding to a propagation delay of 1 ms. Second, together with the electrical device,
we demonstrated an optoelectronic device, light-emitting diodes (LEDs), using organic/oxide hybrid junctions. The
hybrid p-n junction LEDs are composed of N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (α-NPD) and
sputtered ZnO. Similar with conventional p-n junction diodes, the hybrid junction shows a good current rectification and
electroluminescence (EL) under forward bias. We found that the EL bands from the device agree well with the
photoluminescence peaks from α-NPD and ZnO, implying the radiative recombination of injected charges occurs in both
components of the junction.
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