A comparative study of three disordered calcium niobium gallium garnet (CNGG)-type crystals codoped with Tm3+ and Ho3+ ions is performed: (i) without host modifiers (CNGG), (ii) with Li+ cations added (CLNGG), and (iii) with Li+ and La3+ cations added (LCLNGG), all grown by the Czochralski method. The crystals exhibit inhomogeneously broadened luminescence bands extending beyond 2.1 μm. A diode-pumped Tm,Ho:LCLNGG laser generates 562 mW at 2082 nm with a slope efficiency of 17.4% and a laser threshold of 0.46 W. A continuous wavelength tuning between 1904.1 and 2121.1 nm (tuning range: 217 nm) is achieved with this new garnet compound. The Tm,Ho:LCLNGG crystal is promising for generation of ultrashort pulses from mode-locked lasers emitting above 2 μm.
We report on fabrication, structure, spectroscopic and nonlinear properties of a new functional optical material – transparent glass-ceramics (GCs) based on Co2+,Ga3+-codoped ZnO (Co2+:GZO) nanocrystals. The introduction of Ga3+ cations that are smaller than Zn2+ ones and have a different valence state, is expected to modify the crystal field around the Co2+ ions leading to broadband absorption at the 4A2(4F) → 4T1(4F) transition. The glass of the ZnO – K2O – Al2O3 – SiO2 system was doped with 3 mol% Ga2O3 and 0.05 mol% CoO. Transparent GCs were produced by secondary heattreatments at 680 – 860 °C. They contained one crystalline phase - nanosized (8 – 26 nm) hexagonal GZO crystals, Ga3+ ions being distributed between the ZnO nanocrystals and the residual glass. The absorption spectra of GCs contained an intense band at 1.3-1.65 μm related to the 4A2(4F) → 4T1(4F) Co2+ transition in Td sites. A rise of IR losses due to the free charge carrier scattering in GZO was observed. Absorption saturation of transparent GCs was studied at ~1.54 μm. They exhibited low saturation fluence, 0.7–1.3 ± 0.2 J/cm2, and high laser-induced damage threshold, ~25 J/cm2. Co2+,Ga3+- codoped ZnO-based transparent GCs are promising for passive Q-switching of eye-safe erbium lasers emitting at ~1.5- 1.7 μm.
We report on the first laser operation of a novel double molybdate compound, Yb:KY(MoO4)2. Single-crystals were grown by the Low Temperature Gradient (LTG) Czochralski method. The crystal structure (orthorhombic, sp. gr. Pbna – D142h) was refined with the Rietveld method. Yb:KY(MoO4)2 exhibits a layered structure leading to a strong optical anisotropy and a perfect cleavage along the (100) plane. The stimulated-emission cross-section for Yb3+ ions is 3.70×10-20 cm2 at 1008.0 nm and the emission bandwidth is 37 nm (for light polarization E ||b). Continuous-wave laser operation is achieved in a 3 at.% Yb:KY(MoO4)2 crystal plate (thickness: 286 μm) under diode pumping. The microchip laser generated a maximum output power of 0.81 W at 1021-1044 nm with a slope efficiency of 76.4% and linear polarization. Yb:KY(MoO4)2 crystal films / plates are attractive for sub-ns passively Q-switched microchip lasers and thin-disk lasers.
Tetragonal calcium rare-earth aluminates, CaLnAlO4, combine a structural disorder with good thermo-mechanical properties. We report on efficient continuous-wave (CW) and passively Q-switched (PQS) ~2-μm laser operation of a 4 at.% Tm:CaYAlO4 crystal using a compact (6-mm-long) plane-parallel cavity. The pump source was a 791 nm fibercoupled AlGaAs laser diode. The CW output power reached 5.78 W at ~1970 nm with a slope efficiency of 43.6% and a linear laser polarization. Stable PQS operation was achieved using a single-walled carbon nanotube (SWCNT) based transmission-type saturable absorber. The PQS laser generated 2.15 W at ~1945 nm, a record-high average output power for this type of lasers. The best pulse characteristics (energy/duration) were 9.1 μJ/165 ns at a repetition rate of 235 kHz.
Rare-earth-doped calcium niobium gallium garnets (Ca3Nb1.5Ga3.5O12, shortly CNGG) are disordered laser materials attractive for ultrashort pulse generation. We report on the crystal growth by the Czochralski method, spectroscopy and efficient laser operation of Yb3+,Na+ and Yb3+,Na+,Li+-codoped CNGG-type crystals. Their cubic structure is confirmed by X-ray diffraction and Raman spectroscopy. The absorption / stimulated-emission cross-sections and lifetime of Yb3+ are determined. Continuous-wave (CW) laser experiments are performed in a compact cavity using a 968-nm InGaAs pump laser diode. A 11.9 at.% Yb,Na:CNGG crystal generated 3.74 W at 1069.9 nm with a slope efficiency of 56.5%. Yb,Na:CNGG is promising for sub-100-fs mode-locked lasers at ~1 μm.
Ytterbium-doped transparent ceramics based on cubic garnets are promising for thin-disk lasers. 3.6 at.% Yb:Lu3Al5O12 transparent ceramics were fabricated by a solid-state reaction at 1800 °C in vacuum using Yb:Lu2O3 and Al2O3 nanopowders produced by laser ablation and their spectroscopic properties were studied. The stimulated-emission crosssection is 2.46×10-20 cm2 at 1030.2 nm. The Stark splitting of the Yb3+ multiplets was also determined. A compact CW Yb:Lu3Al5O12 ceramic laser pumped by a fiber-coupled 968 nm InGaAs laser diode generated 5.65 W at ~1031 nm with a slope efficiency of 67.2%. Using quasi-CW pumping, the peak power reached 8.83 W.
Monoclinic rare-earth silicates, RE2SiO5, are the promising hosts for Nd3+ doping. We have studied Nd:(Gd,Y)2SiO5, Nd:(Lu,Y)2SiO5 and Nd:Lu2SiO5 crystals for their suitability for ~1.3 μm (4F3/2 → 4I13/2) lasers. The absorption and stimulated-emission cross-section spectra were determined. The continuous-wave laser operation was studied in a compact plano-plano cavity. A b-cut Nd:(Gd,Y)2SiO5 crystal generated up to 0.75 W of linearly polarized emission at 1360.7 nm with a slope efficiency η of 16.9%. For the same crystal operated at the 4F3/2 → 4I11/2 transition, the output power reached 3.84 W at 1077.4 nm with η = 54.5% with a threshold of only 80 mW.
We report on the first application of a topological insulator based on antimony telluride (Sb2Te3) as a saturable absorber (SA) in a bulk microchip laser. The transmission-type SA consisted of a thin film of Sb2Te3 (thickness: 3 nm) deposited on a glass substrate by pulsed magnetron sputtering. The saturable absorption of the Sb2Te3 film was confirmed for ns-long pulses. The microchip laser was based on a Tm:GdVO4 crystal diode-pumped at ∼802 nm. In the continuous-wave regime, this laser generated 3.54 W at 1905-1921 nm with a slope efficiency η of 37%. The Q-switched laser generated a maximum average output power of 0.70 W at 1913 nm. The pulse energy and duration were 3.5 μJ and 223 ns, respectively, at a repetition rate of 200 kHz. The Sb2Te3 SAs are promising for passively Q-switched waveguide lasers at ∼2 μm.
Tetragonal calcium rare-earth aluminates, CaLnAlO4, are attractive laser host crystals. The emission of Nd3+ ions at 1.3- 1.4 μm due to the 4F3/2 → 4I13/2 transition is of interest for medicine, fiber optics, and light conversion. We report on compact Nd:CaLnAlO4 lasers using a plane-plane cavity. With an a-cut 0.8 at.% Nd:CaYAlO4 crystal diode-pumped at 802 nm, a maximum continuous-wave output power of 365 mW was achieved at 1.365 & 1.390 μm corresponding to the σ-polarization. The 4F3/2 → 4I13/2 laser performance of the Nd:CaLnAlO4 crystals was compared to that from a monoclinic Nd:KGd(WO4)2. At the 4F3/2→ 4I11/2 transition (1.08 μm), a Nd:CaYAlO4 micro-laser generated multi-watt output (>4 W) with a slope efficiency of 39%.
Tetragonal rare-earth calcium aluminates, CaLnAlO4 where Ln = Gd or Y (CALGO and CALYO, respectively), are attractive laser crystal hosts due to their locally disordered structure and high thermal conductivity. In the present work, we report on highly-efficient power-scalable microchip lasers based on 8 at.% Yb:CALGO and 3 at.% Yb:CALYO crystals grown by the Czochralski method. Pumped by an InGaAs laser diode at 978 nm, the 6 mm-long Yb:CALGO microchip laser generated 7.79 W at 1057–1065 nm with a slope efficiency of η = 84% (with respect to the absorbed pump power) and an optical-to-optical efficiency of ηopt = 49%. The 3 mm-long Yb:CALYO microchip laser generated 5.06 W at 1048–1056 nm corresponding to η = 91% and ηopt = 32%. Both lasers produced linearly polarized output (σ- polarization) with an almost circular beam profile and beam quality factors M2x,y <1.1. The output performance of the developed lasers was modeled yielding a loss coefficient as low as 0.004-0.007 cm-1. The results indicate that the Yb3+- doped calcium aluminates are very promising candidates for high-peak-power passively Q-switched microchip lasers.
We report on the growth, spectroscopic and laser characterization of a novel monoclinic laser crystal, 3.5 at.% Yb, 5.5 at.% In:KLu(WO4)2 (Yb,In:KLuW). Single-crystals of high optical quality are grown by the TSSG method. The absorption, stimulated-emission and gain cross-sections are determined for this material at room temperature with polarized light. The maximum σabs is 9.9×10-20 cm2 at 980.8 nm for light polarization E || Nm. The radiative lifetime of Yb3+ in Yb,In:KLuW is 237±5 μs. The stimulated-emission cross-sections are σSE(m) = 2.4×10-20 cm2 at 1022.4 nm and σSE(p) = 1.3×10-20 cm2 at 1039.1 nm corresponding to an emission bandwidth of >30 nm and >35 nm, respectively. A diode-pumped Ng-cut Yb,In:KLuW microchip laser generates 4.11 W at 1047-1052 nm with a slope efficiency of 78%. Passive Q-switching of a Yb,In:KLuW laser is also demonstrated. The Yb,In:KLuW crystal seems very promising for sub-100 fs mode-locked lasers.
A trigonal 5.6 at.% Yb:YAl3(BO3)4 (Yb:YAB) crystal is employed in continuous-wave (CW) and passively Q-switched microchip lasers pumped by a diode at 978 nm. Using a 3 mm-thick, c-cut Yb:YAB crystal, which has a higher pump absorption efficiency, efficient CW microchip laser operation is demonstrated. This laser generated a maximum output power of 7.18 W at 1041–1044 nm with a slope efficiency η of 67% (with respect to the absorbed pump power) and an almost diffraction-limited beam, M2x,y < 1.1. Inserting a Cr:YAG saturable absorber, stable passive Q-switching of the Yb:YAB microchip laser was obtained. The maximum average output power from the Yb:YAB/Cr:YAG laser reached 2.82 W at 1042 nm with η = 53% and a conversion efficiency with respect to the CW mode of 65% (when using a 0.7 mm-thick Cr:YAG). The latter corresponded to a pulse duration and energy of 7.1 ns / 47 μJ at a pulse repetition rate (PRR) of 60 kHz. Using a 1.3 mm-thick Cr:YAG, 2.02 W were achieved at 1041 nm corresponding to η = 38%. The pulse characteristics were 4.9 ns / 83 μJ at PRR = 24.3 kHz and the maximum peak power reached 17 kW. Yb:YAB crystals are very promising for compact sub-ns power-scalable microchip lasers.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.